公开(公告)号：WO2012024116A3

公开(公告)日：2012-04-26

申请号：PCT/US2011047109

申请日：2011-08-09

Applicant: APPLIED MATERIALS INC ,  RAMASWAMY KARTIK ,  MARKOVSKY IGOR ,  CHEN ZHIGANG ,  CARDUCCI JAMES D ,  COLLINS KENNETH S ,  RAUF SHAHID ,  MISRA NIPUN ,  DORF LEONID ,  YE ZHENG JOHN

Inventor： RAMASWAMY KARTIK ,  MARKOVSKY IGOR ,  CHEN ZHIGANG ,  CARDUCCI JAMES D ,  COLLINS KENNETH S ,  RAUF SHAHID ,  MISRA NIPUN ,  DORF LEONID ,  YE ZHENG JOHN

IPC: H05H1/46 ,  H03H7/40 ,  H05H1/34

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：WO2012024116A2

公开(公告)日：2012-02-23

申请号：PCT/US2011/047109

申请日：2011-08-09

Applicant: APPLIED MATERIALS, INC. ,  RAMASWAMY, Kartik ,  MARKOVSKY, Igor ,  CHEN, Zhigang ,  CARDUCCI, James D. ,  COLLINS, Kenneth S. ,  RAUF, Shahid ,  MISRA, Nipun ,  DORF, Leonid ,  YE, Zheng John

Inventor： RAMASWAMY, Kartik ,  MARKOVSKY, Igor ,  CHEN, Zhigang ,  CARDUCCI, James D. ,  COLLINS, Kenneth S. ,  RAUF, Shahid ,  MISRA, Nipun ,  DORF, Leonid ,  YE, Zheng John

IPC: H05H1/46 ,  H03H7/40 ,  H05H1/34

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本发明涉及电容耦合等离子体源，其中VHF功率通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器来施加。

公开(公告)号：WO2013162838A1

公开(公告)日：2013-10-31

申请号：PCT/US2013/035006

申请日：2013-04-02

Applicant: APPLIED MATERIALS, INC. ,  SADJADI, S.M. Reza ,  LUBOMIRSKY, Dmitry ,  NOORBAKHSH, Hamid ,  YE, Zheng John ,  QUACH, David H. ,  KANG, Sean S.

Inventor： SADJADI, S.M. Reza ,  LUBOMIRSKY, Dmitry ,  NOORBAKHSH, Hamid ,  YE, Zheng John ,  QUACH, David H. ,  KANG, Sean S.

IPC: H01L21/205

CPC classification number: H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

Abstract translation: 提供了一种动态可调工艺套件，具有动态可调工艺套件的处理室以及使用动态可调工艺套件处理衬底的方法。 动态可调工艺套件允许改变工艺套件的电气和热状态，而不改变工艺套件的植物结构，从而允许容易地改变等离子体性能，因此处理结果而不需要更换过程 套件。 具有可动态调节的处理套件的处理室包括腔室主体，其包括被配置为电控制的导电侧壁的一部分，以及处理套件。 处理室包括可操作以控制处理套件的电气和热状态中的一个或两个的第一控制系统和可操作以控制侧壁部分的电气状态的第二控制系统。