公开(公告)号：WO2012018557A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/045023

申请日：2011-07-22

Applicant: APPLIED MATERIALS, INC. ,  COLLINS, Kenneth, S. ,  CHEN, Zhigang ,  RAMASWAMY, Kartik ,  CARDUCCI, James, D. ,  RAUF, Shahid ,  NGUYEN, Andrew

Inventor： COLLINS, Kenneth, S. ,  CHEN, Zhigang ,  RAMASWAMY, Kartik ,  CARDUCCI, James, D. ,  RAUF, Shahid ,  NGUYEN, Andrew

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：WO2011016979A3

公开(公告)日：2011-04-28

申请号：PCT/US2010042412

申请日：2010-07-19

Applicant: APPLIED MATERIALS INC ,  RAMASWAMY KARTIK ,  HANAWA HIROJI ,  COLLINS KENNETH S ,  WONG LAWRENCE ,  BANNA SAMER ,  NGUYEN ANDREW

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  COLLINS KENNETH S ,  WONG LAWRENCE ,  BANNA SAMER ,  NGUYEN ANDREW

IPC: H05H1/46 ,  H03H7/40

CPC classification number: H01P7/04

Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Abstract translation: 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

公开(公告)号：WO2009114262A2

公开(公告)日：2009-09-17

申请号：PCT/US2009/035000

申请日：2009-02-24

Applicant: APPLIED MATERIALS, INC. ,  BERA, Kallol ,  RAUF, Shahid ,  BALAKRISHNA, Ajit ,  COLLINS, Kenneth S. ,  RAMASWAMY, Kartik ,  HANAWA, Hiroji

Inventor： BERA, Kallol ,  RAUF, Shahid ,  BALAKRISHNA, Ajit ,  COLLINS, Kenneth S. ,  RAMASWAMY, Kartik ,  HANAWA, Hiroji

IPC: H05H1/36 ,  H01L21/20 ,  H01L21/30

CPC classification number: H01J37/32174 ,  H01J37/32009 ,  H01J37/32045 ,  H01J37/32091

Abstract: A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

Abstract translation: 公开了一种用于控制等离子体均匀性的方法和装置。 当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。 阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。 阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。 阻抗电路可以包括电感器和电容器中的一个或多个。 电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。 此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

公开(公告)号：WO2008089168A2

公开(公告)日：2008-07-24

申请号：PCT/US2008051051

申请日：2008-01-15

Applicant: APPLIED MATERIALS INC ,  COLLINS KENNETH S ,  NGUYEN ANDREW ,  RAMASWAMY KARTIK ,  HANAWA HIROJI ,  BUCHBERGER JR DOUGLAS A ,  HOFFMAN DANIEL J ,  AL-BAYATI AMIR

Inventor： COLLINS KENNETH S ,  NGUYEN ANDREW ,  RAMASWAMY KARTIK ,  HANAWA HIROJI ,  BUCHBERGER JR DOUGLAS A ,  HOFFMAN DANIEL J ,  AL-BAYATI AMIR

IPC: C23C16/453

CPC classification number: H01J37/32458 ,  H01J37/32412 ,  H01J37/32477

Abstract: Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma source, plasma channeling device, showerhead, and substrate support assembly are adapted to improve the usable lifetime of the plasma chamber, as well as reduce assembly cost, increase the plasma chamber reliability, and improve device yield on the processed substrates.

Abstract translation: 本文描述的实施例通常提供环形等离子体源，等离子体引导装置，喷头和用于等离子体室的基板支撑组件。 环形等离子体源，等离子体引导装置，喷头和基板支撑组件适于改善等离子体室的使用寿命，并且降低组装成本，增加等离子体室的可靠性，并提高处理的基板上的装置产量。

公开(公告)号：WO2015023945A1

公开(公告)日：2015-02-19

申请号：PCT/US2014/051274

申请日：2014-08-15

Applicant: APPLIED MATERIALS, INC. ,  FORSTER, John C. ,  YUDOVSKY, Joseph ,  KWONG, Garry K ,  NGO, Tai T. ,  GRIFFIN, Kevin ,  COLLINS, Kenneth S. ,  LIU, Ren

Inventor： FORSTER, John C. ,  YUDOVSKY, Joseph ,  KWONG, Garry K ,  NGO, Tai T. ,  GRIFFIN, Kevin ,  COLLINS, Kenneth S. ,  LIU, Ren

IPC: H01L21/205 ,  H01L21/02

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract translation: 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。

公开(公告)号：WO2013162642A1

公开(公告)日：2013-10-31

申请号：PCT/US2012/060194

申请日：2012-10-15

Applicant: APPLIED MATERIALS, INC. ,  KOBAYASHI, Satoru ,  WONG, Lawrence ,  LIU, Jonathan ,  YANG, Yang ,  RAMASWAMY, Kartik ,  RAUF, Shahid ,  NEVIL, Shane, C. ,  BERA, Kallol ,  COLLINS, Kenneth, S.

Inventor： KOBAYASHI, Satoru ,  WONG, Lawrence ,  LIU, Jonathan ,  YANG, Yang ,  RAMASWAMY, Kartik ,  RAUF, Shahid ,  NEVIL, Shane, C. ,  BERA, Kallol ,  COLLINS, Kenneth, S.

IPC: H05H1/46 ,  H03H7/40 ,  H03L7/08

CPC classification number: C23C16/505 ,  B05C9/00 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/3299

Abstract: Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes,, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.

Abstract translation: 通过相位锁定反馈控制回路根据期望的或用户选择的相位差来控制相对的RF电极之间的相位差，等离子体反应器中的等离子体分布被控制。

公开(公告)号：WO2013059097A1

公开(公告)日：2013-04-25

申请号：PCT/US2012/060052

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC. ,  RAMASWAMY, Kartik ,  BERA, Kallol ,  COLLINS, Kenneth, S. ,  RAUF, Shahid

Inventor： RAMASWAMY, Kartik ,  BERA, Kallol ,  COLLINS, Kenneth, S. ,  RAUF, Shahid

IPC: H05H1/24 ,  H01L21/205

CPC classification number: H01J37/32091 ,  H01J37/32541

Abstract: A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.

Abstract translation: 等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束 室。

公开(公告)号：WO2012012200A1

公开(公告)日：2012-01-26

申请号：PCT/US2011/043083

申请日：2011-07-06

Applicant: APPLIED MATERIALS, INC. ,  CARDUCCI, James D. ,  CHEN, Zhigang ,  RAUF, Shahid ,  COLLINS, Kenneth S.

Inventor： CARDUCCI, James D. ,  CHEN, Zhigang ,  RAUF, Shahid ,  COLLINS, Kenneth S.

IPC: H05H1/24 ,  H05H1/34 ,  H05H1/46

CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32495 ,  H01L21/67069 ,  Y10T428/13

Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

Abstract translation: 本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。 室主体限定用于容纳等离子体的处理容积，用于支撑室盖。 腔室主体包括室侧壁，底壁和衬套组件。 腔室侧壁和底壁限定用于容纳等离子体的处理体积。 设置在处理容积内的衬套组件包括形成在其上的两个或更多个槽，用于提供轴对称RF电流路径。 支撑组件支撑用于在室主体内进行加工的基板。 利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

公开(公告)号：WO2011017333A3

公开(公告)日：2011-05-19

申请号：PCT/US2010044263

申请日：2010-08-03

Applicant: APPLIED MATERIALS INC ,  CARDUCCI JAMES D ,  NEMANI SRINIVAS D ,  TANG HAIRONG ,  SUN HUI ,  MARKOVSKY IGOR ,  GOLD EZRA R ,  KAYA IWALANI S ,  YIEH ELLIE Y ,  ZHANG CHUNLEI ,  COLLINS KENNETH S ,  ARMACOST MICHAEL D ,  BALAKRISHNA AJIT ,  LILL THORSTEN B

Inventor： CARDUCCI JAMES D ,  NEMANI SRINIVAS D ,  TANG HAIRONG ,  SUN HUI ,  MARKOVSKY IGOR ,  GOLD EZRA R ,  KAYA IWALANI S ,  YIEH ELLIE Y ,  ZHANG CHUNLEI ,  COLLINS KENNETH S ,  ARMACOST MICHAEL D ,  BALAKRISHNA AJIT ,  LILL THORSTEN B

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

Abstract: A method, a system and a computer readable medium for integrated in- vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

Abstract translation: 一种用于集成真空修复由蚀刻和/或剥离处理损坏的低k电介质薄膜的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室整合到相同的平台上以修复低k电介质薄膜而不破坏损坏事件与修复事件之间的真空。 可以在低k修复处理之前，之后或期间的任何组合中在集成蚀刻/修复平台上提供UV辐射以增加修复处理的功效和/或修复的稳定性。

公开(公告)号：WO2011028312A1

公开(公告)日：2011-03-10

申请号：PCT/US2010/038286

申请日：2010-06-11

Applicant: APPLIED MATERIALS, INC. ,  COLLINS, Kenneth, S. ,  NGUYEN, Andrew ,  SALINAS, Jeffrey, Martin ,  YOUSIF, Imad ,  XU, Ming

Inventor： COLLINS, Kenneth, S. ,  NGUYEN, Andrew ,  SALINAS, Jeffrey, Martin ,  YOUSIF, Imad ,  XU, Ming

IPC: H01L21/3065 ,  H05H1/24 ,  H05H1/30

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32935

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract translation: 等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。 完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。