公开(公告)号：WO1997032200A1

公开(公告)日：1997-09-04

申请号：PCT/CH1997000064

申请日：1997-02-21

Applicant: ABB RESEARCH LTD. ,  STUCKI, Fredi

Inventor： ABB RESEARCH LTD.

IPC: G01N23/16

CPC classification number: G01N23/18 ,  B29C47/92 ,  B29C2947/92228 ,  B29C2947/92295 ,  B29C2947/92438 ,  B29C2947/92723 ,  B29C2947/9279 ,  B29C2947/92933

Abstract: The invention relates to a process for monitoring a disperse system for non-dispersed impurities (16) before processing of said system into an end product. During said process, part of the disperse system is extruded before processing to form a strip (7) and the impurities in said strip are detected. To this end, weak X-rays are beamed through small areas of the strip (7) continuously or gradually and at right angles to the strip plane. The X-rays emerging from the areas of the strip through which they have passed are subsequently detected in areas. The type, number, size, shape and/ or distribution of the impurities (16) are determined by the detected rays. It is particularly advantageous that impurities inside the strip and also on the surface thereof are detected as a result of X-rays passing through the strip (7). If the impurities (16) exceed a predetermined threshold, the disperse system does not undergo further processing.

Abstract translation: 该方法用于监视之前进行处理，以最终产物非分散的杂质（16）一分散体系。 在这个过程中，处理前的分散体系的一个带（7）的部分是挤出并在该频带中检测到的杂质。 在这种情况下，带（7）的小区域是连续地或逐步地跨越辐射到色带平面与软X射线。 从带的X射线辐射的照射区域中的新兴然后部分检测到。 的类型，数量，尺寸，形状，和/或杂质的分布（16）从所述检测到的辐射来确定。 在这里，它是，由于带的照射（7）检测到二者在内部的磁带和带表面上的杂质特别的优点。 超过（16）超过预定的阈值的杂质，分散物系被排除其进一步处理。

公开(公告)号：WO1998014643A1

公开(公告)日：1998-04-09

申请号：PCT/SE1997001612

申请日：1997-09-25

Applicant: ABB RESEARCH LTD. ,  OKMETIC LTD. ,  KORDINA, Olle ,  ELLISON, Alex ,  GU, Chun-Yuan ,  JANZÉN, Erik ,  HALLIN, Christer ,  TUOMINEN, Marko

Inventor： ABB RESEARCH LTD. ,  OKMETIC LTD.

IPC: C30B25/14

CPC classification number: C30B25/02 ,  C30B25/14 ,  C30B29/36 ,  C30B29/403 ,  C30B29/406

Abstract: A device for epitaxially growing objects of for instance SiC by Chemical Vapour Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of said flows, and emerges into said first conduit at a distance from said room.

Abstract translation: 用于通过化学气相沉积在衬底上外延生长物体例如SiC的装置具有第一导管（24），其被布置成基本上仅将载气导入接收衬底的房间（18），并且第二导管（25）被接收 所述第一管道具有比所述第一管道更小的横截面并沿所述第一管道的纵向方向延伸，其周向空间将其与所述第一管道的内壁分隔开。 第二导管适于基本上导入整个反应气体流，并且其沿着所述流动的方向观察而终止，并且在距离所述室的距离处出现在所述第一导管中。

公开(公告)号：WO1998002923A2

公开(公告)日：1998-01-22

申请号：PCT/SE1997001156

申请日：1997-06-27

Applicant: ABB RESEARCH LTD. ,  BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf

Inventor： ABB RESEARCH LTD.

IPC: H01L29/24

CPC classification number: H01L29/1608 ,  H01L21/0465 ,  H01L29/0603 ,  H01L29/6606 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers, where the junction is at the edge of the lower doped conducting layer terminated by a depletion region stopper (DRS) which exhibits a charge profile with a stepwise or uniformly increasing total charge and/or effective sheet charge density from a first lowest value to a highest value at the outermost edge (5) of the junction following a radial direction from the main junction towards the outermost edge.

Abstract translation: 一种用于处理所述元件的半导体元件和方法，其包括pn结，其中pn结的p导电（3）和n导电层（2）都构成掺杂的碳化硅层，其中所述结处于 下掺杂导电层的边缘由耗尽区域阻挡层（DRS）终止，其表现出电荷分布，其逐步或均匀地增加总电荷和/或有效片电荷密度，从最外边缘处的第一最低值到最高值 （5）沿着从主结到最外边缘的径向方向。

公开(公告)号：WO1997048828A1

公开(公告)日：1997-12-24

申请号：PCT/CH1997000229

申请日：1997-06-09

Applicant: ABB RESEARCH LTD.

Inventor： ABB RESEARCH LTD. ,  KONTER, Maxim ,  NEWNHAM, Michael ,  TÖNNES, Christoph

IPC: C22C19/05

CPC classification number: C22C19/057 ,  C30B11/00 ,  C30B29/52

Abstract: A nickel-base superalloy, in particular for the production of large single-crystal components, consisting essentially of 6.0-6.8 % Cr, 8.0-10.0 % Co, 0.5-0.7 % Mo, 6.2-6.6 % W, 2.7-3.2 % Re, 5.4-5.8 % Al, 0.6-1.2 % Ti, 6.3-7.0 % Ta, 0.15-0.3 % Hf and 0.02-0.04 % C (all by weight), 40-100 ppm B and 15-50 ppm Mg, the remainder being made up of nickel and impurities.

Abstract translation: 一种镍基超合金，特别是用于生产大型单晶元件，基本上由（以重量测量.-％）：铬6.0-6.8％，8.0-10.0％的Co，0.5-0.7％的Mo，6.2-6.6 ％W，2.7-3.2％的Re，5.4-5.8％的Al，0.6-1.2％的Ti，Ta中的6.3-7.0％，0.15-0.3％的Hf，0点02分〜12：04％C，40〜100 ppm的B的，15-50 PPM的Mg ，其余为镍与杂质。

公开(公告)号：WO1997034210A1

公开(公告)日：1997-09-18

申请号：PCT/SE1997000424

申请日：1997-03-13

Applicant: ABB RESEARCH LTD. ,  HÖRNFELDT, Sven

Inventor： ABB RESEARCH LTD.

IPC: G05F01/32

CPC classification number: G05F1/32 ,  H02H9/021

Abstract: A device for performing, individually or in combination with each other, the functions of voltage control, power factor correction, current limiting and harmonic filtering at a network, with a line voltage U0 and a load voltage U, with the aid of a control voltage DELTA U. The device comprises a controllable reactor comprising at least one control winding (7) and at least one power winding (5) for generating the control voltage DELTA U, as well as a control unit (10) which, via at least one power amplifier (9), delivers a control current Is to the control winding. The power winding is connected in series with the load (2) and through it flows a load current I0. A measuring member (8) senses the magnetic flux ( PHI ) of the controllable reactor and delivers a flux voltage V PHI proportional thereto. Via measuring members, those signals which correspond to the line voltage U0, the load voltage U, the control voltage DELTA U, the load current I0 and the flux voltage V PHI are fed back to the control unit which, in dependence thereon, via the power amplifier(s), delivers such a control current Is to the control winding that the control voltage DELTA U induced in the power winding supplements the line voltage U0 such that the relevant functions or function are/is achieved.

Abstract translation: 一种用于在网络上单独或组合地执行电压控制，功率因数校正，电流限制和谐波滤波的功能，借助于控制电压来执行线路电压U0和负载电压U的装置 该装置包括可控电抗器，其包括用于产生控制电压DELTA U的至少一个控制绕组（7）和至少一个功率绕组（5），以及控制单元（10），其经由至少一个 功率放大器（9），向控制绕组传送控制电流Is。 功率绕组与负载（2）串联连接，并通过负载电流I0流动。 测量构件（8）感测可控电抗器的磁通量（PHI），并且传递与其成比例的通量电压V PHI。 通过测量构件，对应于线路电压U0，负载电压U，控制电压DELTA U，负载电流I0和通量电压V PHI的那些信号被反馈到控制单元，控制单元依赖于经由 功率放大器向控制绕组提供控制绕组，使控制电压DELTA U在功率绕组中感应，补偿线路电压U0，使得实现相关功能或功能。

公开(公告)号：WO1997031134A1

公开(公告)日：1997-08-28

申请号：PCT/SE1997000291

申请日：1997-02-21

Applicant: ABB RESEARCH LTD. ,  KORDINA, Olle ,  FORNELL, Jan-Olov ,  BERGE, Rune ,  NILSSON, Roger

Inventor： ABB RESEARCH LTD.

IPC: C23C16/32

CPC classification number: C23C16/4583 ,  C23C16/46 ,  C30B25/12

Abstract: A susceptor for a device for epitaxially growing objects of one of a) SiC, b) a Group 3B-nitride and c) alloys thereof on a substrate to be received in the susceptor has a channel (10') adapted to receive said substrate and through which a source material for the growth is intended to be fed, the walls (8') of the susceptor surrounding said channel being intended to be heated by heating means intended to surround the susceptor. The susceptor is provided with at least two channels (10') adapted to receive at least one substrate for growth of at least one said object each and to receive a portion each of a flow of said source material to be fed to the susceptor for said growth.

Abstract translation: 用于在a）SiC，b）第3B族氮化物和c）它们的基底上的待接收的基底中的一种的外延生长物体的感受体具有适于接收所述基底的通道（10'）和 用于生长的源材料通过其被供给，围绕所述通道的基座的壁（8'）旨在由旨在围绕基座的加热装置加热。 感受体设置有至少两个通道（10'），该通道适于容纳至少一个用于生长至少一个所述物体的基底，并且接收每个要供给到所述基座的所述源材料的流的部分 生长。

公开(公告)号：WO1997013013A1

公开(公告)日：1997-04-10

申请号：PCT/SE1996001232

申请日：1996-10-02

Applicant: ABB RESEARCH LTD. ,  OKMETIC LTD. ,  KORDINA, Olle ,  HALLIN, Christer ,  JANZÉN, Erik ,  VEHANEN, Asko ,  YAKIMOVA, Rositza ,  TUOMINEN, Marko

Inventor： ABB RESEARCH LTD. ,  OKMETIC LTD.

IPC: C30B29/36

CPC classification number: C30B23/02 ,  C30B29/36 ,  C30B29/38 ,  Y10T117/10

Abstract: In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapour state in a container comprising said susceptor by said heating and carried in a vapour state to said substrate for said growth.

Abstract translation: 在用于外延生长SiC的物体的方法中，在衬底（13）上的第III族氮化物或其合金接收在具有圆周壁（8）的基座（7）中，并且由衬底和源材料（24） ）用于生长的温度高于材料生长开始的升华开始显着增加的温度水平。 载气流被馈送到基座朝向基板，用于将所述源材料传送到基板用于所述生长。 用于所述生长的所述源材料的至少一部分被添加到基座（7）上游的载气流中，并通过载气流以承载体承载在a）固态和b）液态中 通过所述加热在包含所述基座的容器中使其蒸气状态，并以蒸汽状态运送到所述基底以进行所述生长。

公开(公告)号：WO1997008562A1

公开(公告)日：1997-03-06

申请号：PCT/FI1996000457

申请日：1996-08-23

Applicant: ABB RESEARCH LTD. ,  RANTANEN, Reijo ,  SUONTAUSTA, Janne

Inventor： ABB RESEARCH LTD.

IPC: G01R31/08

CPC classification number: G01R31/086 ,  Y04S10/522

Abstract: The present invention concerns a method of locating a ground fault in a power distribution network, in which method the start instant of the fault transient is determined from the change of the neutral point voltage, the current and voltage transient signals of the faulty phase are filtered, the duration of the transient is determined, the frequency of the fault transient waveform is estimated, the measured voltage and current transient signals are low-pass filtered, the spectra U( omega ) and I( omega ), of the voltage and current transients are computed, the impedance spectrum (1) is computed, and the estimate of the fault distance is computed for a discrete angular frequency omega k from the equation (2). According to the invention, the voltage and current signals of the faulty phase are filtered using a comb filter, the measured voltage and current signals are low-pass filtered in two directions, the frequency of the charge/discharge transient is estimated from the autocorrelation function of the transient, and the complex value spectra U( omega ) and I( omega ) of the voltage and current transients are computed using parametric spectral estimation methods.

Abstract translation: 本发明涉及一种定位配电网络中的接地故障的方法，其中，根据中性点电压的变化确定故障瞬变的起始时刻，滤波器的电流和电压瞬态信号被过滤 ，确定瞬态的持续时间，估计故障瞬态波形的频率，测量的电压和电流瞬态信号被低通滤波，电压和电流瞬变的光谱U（ω）和I（ω） 计算阻抗谱（1），并根据等式（2）计算离散角频率ωk的故障距离估计。 根据本发明，使用梳状滤波器对故障相位的电压和电流信号进行滤波，测量的电压和电流信号在两个方向上被低通滤波，从自相关函数估计充电/放电瞬变的频率 的瞬态，并且使用参数谱估计方法计算电压和电流瞬变的复数值光谱U（ω）和I（ω）。

公开(公告)号：WO1996035128A1

公开(公告)日：1996-11-07

申请号：PCT/SE1996000558

申请日：1996-04-29

Applicant: ABB RESEARCH LTD. ,  ERIKSSON, Thomas ,  LEIJON, Mats

Inventor： ABB RESEARCH LTD.

IPC: G01R31/02

CPC classification number: G01R31/027 ,  G01R31/1227

Abstract: In a method for monitoring of partial discharges in an electric power transformer (1) under normal operating conditions, the magnetic field at a high-voltage bushing (2) on the power transformer is sensed with an inductive sensor (6) comprising at least one coil (6a, 6b) arranged at the bushing, and the electric field at the bushing is sensed with a capacitive sensor (5). The output signals from said sensors are supplied to a signal processing unit (3) in which each one of the output signals is filtered in a separate bandpass filter (101, 102), whereupon the filtered output signals from said sensors are multiplied by each other. An output signal (PDI) from the signal processing unit is formed in dependence on the result of said multiplication for the purpose of detecting internal partial discharges in the transformer.

Abstract translation: 在用于在正常操作条件下监测电力变压器（1）中的局部放电的方法中，用电感式传感器（6）感测电力变压器上的高压套管（2）上的磁场，该感应传感器（6）包括至少一个 布置在衬套处的线圈（6a，6b），并且用电容传感器（5）感测衬套处的电场。 来自所述传感器的输出信号被提供给信号处理单元（3），其中每个输出信号在单独的带通滤波器（101,102）中被滤波，于是来自所述传感器的经滤波的输出信号被彼此相乘 。 为了检测变压器内的部分放电，来自信号处理单元的输出信号（PDI）根据所述乘法的结果而形成。

公开(公告)号：WO1994019423A1

公开(公告)日：1994-09-01

申请号：PCT/SE1994000148

申请日：1994-02-23

Applicant: ABB RESEARCH LTD. ,  DAHLUND, Mats ,  JOHANSSON, Lennart ,  SCHÜTTE, Torsten

Inventor： ABB RESEARCH LTD.

IPC: C09K15/04

CPC classification number: C08K5/06 ,  C08K3/04 ,  C08K3/045 ,  C08K5/005 ,  C08L23/06 ,  C08L23/0869 ,  C09K15/02 ,  C10M125/02 ,  C10M133/04 ,  C10M159/12 ,  C10M2201/041 ,  C10M2201/042 ,  C10M2207/125 ,  C10M2207/129 ,  C10M2215/02 ,  C10M2215/04 ,  C10M2215/26 ,  C10M2227/00 ,  C10N2210/01 ,  C10N2240/20 ,  C10N2240/201 ,  C10N2240/202 ,  C10N2240/203 ,  C10N2240/204 ,  C10N2240/205 ,  C08L75/04 ,  C08L63/00

Abstract: A method of protecting organic materials such as oils, fats and polymeric materials, which are subjected to oxidation or other degrading influence from external factors such as heat or other radiation as well as electric or magnetic fields, whereby essentially globular or tubular carbon molecules, so-called fullerenes, or derivatives based on said carbon molecules, are added to the organic material.

Abstract translation: 保护诸如油，脂肪和聚合材料的有机材料的方法，其受到来自诸如热或其它辐射以及电场或磁场的外部因素的氧化或其它降解的影响，从而基本上是球形或管状的碳分子，因此 被称为富勒烯或基于所述碳分子的衍生物加入到有机材料中。