公开(公告)号：WO0199180A3

公开(公告)日：2002-04-11

申请号：PCT/US0114131

申请日：2001-05-01

Applicant: ADVANCED MICRO DEVICES INC

Inventor： LUKANC TODD P ,  TAYLOR KURT O

IPC: H01L21/265 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/3115 ,  H01L21/326 ,  H01L21/74 ,  H01L21/768 ,  H01L27/12 ,  H01L21/762

CPC classification number: H01L21/743 ,  H01L21/265 ,  H01L21/28525 ,  H01L21/3065 ,  H01L21/31155 ,  H01L21/326 ,  H01L21/76804 ,  H01L21/76825 ,  H01L21/76831 ,  H01L27/1203

Abstract: A method for making frontside contact to a substrate through an SOI (20) structure thereon is provided. An etching step is undertaken to form a trench (32) in the SOI structure so as to expose and define a rough surface (34) of the substrate. Then, a thin insulating layer (40), for example SiO2, is formed over the exposed surface of the substrate, this insulating layer being irregular because of its formation over the relatively rough etched surface. Contact material (42) is provided in the trench, and electrical potential is applied across the contact and substrate sufficient to increase the conductivity of the insulating layer (40), i.e., to break down the insulating layer. Nitrogen may be implanted into the exposed surface of the substrate to slow subsequent growth of the insulating layer, resulting in an even thinner insulating layer, i.e., one even less resistant to breakdown upon application of electrical potential thereacross. If the insulating layer thereon is sufficiently thin or irregular, ohmic contact may be achieved between the contact and substrate without the application of such electrical potential. In yet another embodiment, prior to formation of the insulating layer, the exposed surface of the substrate and wall of the trench are fabricated such that meet at an abrupt angle. Insulating material formed in this area is of poor quality, readily lending itself to breakdown upon application of electrical potential across the contact material and substrate.

Abstract translation: 提供了通过SOI（20）结构在基板上进行前端接触的方法。 进行蚀刻步骤以在SOI结构中形成沟槽（32），以暴露和限定衬底的粗糙表面（34）。 然后，在衬底的暴露表面上形成例如SiO2的薄绝缘层（40），该绝缘层由于在相对粗糙的蚀刻表面上的形成而是不规则的。 接触材料（42）设置在沟槽中，并且跨接触件和衬底施加电势足以增加绝缘层（40）的导电性，即分解绝缘层。 可以将氮气注入到衬底的暴露表面中以减缓绝缘层的随后生长，导致更薄的绝缘层，即，在施加电位之后甚至更不易于击穿。 如果其上的绝缘层足够薄或不规则，则可以在接触和衬底之间实现欧姆接触而不施加这种电势。 在另一个实施例中，在形成绝缘层之前，制造衬底的暴露表面和沟槽的壁，使得以突然的角度相遇。 在该区域中形成的绝缘材料质量差，容易在施加电接触材料和基底上的电位时自身破裂。