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    POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE
    1.
    发明申请
    POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE 审中-公开
    使用组合物的后CMP去除和使用方法

    公开(公告)号：WO2013123317A1

    公开(公告)日：2013-08-22

    申请号：PCT/US2013/026326

    申请日：2013-02-15

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

    Inventor： LIU, Jun ,  BARNES, Jeffrey A. ,  COOPER, Emanuel I. ,  SUN, Laisheng ,  THOMAS, Elizabeth ,  CHANG, Jason

    IPC: C09K3/14 ,  H01L21/304

    CPC classification number: H01L21/02074 ,  C11D3/044 ,  C11D3/3409 ,  C11D3/39 ,  C11D3/3942 ,  C11D7/06 ,  C11D11/0047

    Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

    Abstract translation: 一种不含胺的组合物和用于从具有所述残留物和污染物的微电子装置清洁化学后机械抛光（CMP）残留物和污染物的方法。 不含胺的组合物优选包括至少一种氧化剂，至少一种络合剂，至少一种碱性化合物和水，并且其pH在约2.5至约11.5的范围内。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

    Ni SELECTIVE ETCHING COMPOSITION THAT IS COMPATIBLE WITH NiGe AND Ge
    3.
    发明申请
    Ni SELECTIVE ETCHING COMPOSITION THAT IS COMPATIBLE WITH NiGe AND Ge 审中-公开
    Ni选择性蚀刻组合物与NiGe和Ge兼容

    公开(公告)号：WO2015168449A1

    公开(公告)日：2015-11-05

    申请号：PCT/US2015/028593

    申请日：2015-04-30

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

    Inventor： BARNES, Jeffrey A. ,  COOPER, Emanuel I.

    IPC: H01L21/306

    CPC classification number: H01L21/32134 ,  H01L29/665

    Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe) from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

    Abstract translation: 用于相对于金属锗化物（例如，NiGe）从其上具有相同性质的微电子器件选择性除去未反应的金属材料（例如未反应的镍）的组合物和方法。 组合物基本上与微电子器件上存在的其它材料相容，如低k电介质和氮化硅。

    POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE
    4.
    发明申请
    POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE 审中-公开
    化学机械抛光配方及其使用方法

    公开(公告)号：WO2015116679A1

    公开(公告)日：2015-08-06

    申请号：PCT/US2015/013286

    申请日：2015-01-28

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

    Inventor： LIU, Jun ,  BARNES, Jeffrey A. ,  ZHANG, Peng ,  SUN, Laisheng ,  MEDD, Steven

    IPC: H01L21/304

    CPC classification number: H01L21/02074 ,  C11D3/36 ,  C11D3/43 ,  C11D7/36 ,  C11D7/50 ,  C11D11/0047 ,  H01L21/02063

    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amines and ammonium-containing salts. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

    Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含胺和含铵盐。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

    LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE
    9.
    发明申请
    LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE 审中-公开

    公开(公告)号：WO2007092800A3

    公开(公告)日：2007-08-16

    申请号：PCT/US2007/061588

    申请日：2007-02-05

    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  BARNES, Jeffrey A.

    Inventor： BARNES, Jeffrey A.

    IPC: H01L21/31

    Abstract: An acidic composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The acidic composition includes surfactant, dispersing agent, sulfonic acid-containing hydrocarbon, and water. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

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