公开(公告)号：WO2015123379A1

公开(公告)日：2015-08-20

申请号：PCT/US2015/015547

申请日：2015-02-12

Applicant: APPLIED BIOPHOTONICS LTD. ,  WILLIAMS, Richard, K.

Inventor： WILLIAMS, Richard, K. ,  LIN, Keng, Hung ,  SCHELL, Daniel ,  LEAHY, Joseph, P.

IPC: A61N5/06 ,  A61N5/067 ,  H05B37/02

CPC classification number: A61N5/06 ,  A61B2017/00159 ,  A61N2005/0626 ,  A61N2005/0629 ,  A61N2005/0652

Abstract: The LEDs in a phototherapy LED pad are controlled so that the intensity of the light varies in accordance with a sinusoidal function, thereby eliminating the harmonics that are generated when the LEDs are pulsed digitally, in accordance with a square-wave function. This is accomplished analogically by using a sinusoidal wave to control the gate of a MOSFET connected in series with the LEDs or by using a digiltal-to-analog converter to control the gate of the MOSFET with a stair step function representative of the values of a sinusoidal function at predetermined intervals. Alternatively, pulse-width modulation is used to control the gate of the MOSFET in such a way that the average current through the LEDs simulates a sinusoidal function. In additional to using a simple sine wave function, the LED current may also be controlled in accordance with "chords" containing multiple sine waves of different frequencies.

Abstract translation: 控制光疗LED垫中的LED，使得光的强度根据正弦函数而变化，从而消除了当LED以数字方式脉冲数时产生的谐波，根据方波函数。 这通过使用正弦波来控制与LED串联连接的MOSFET的栅极或通过使用数字 - 模拟转换器来控制具有代表a的值的阶梯函数的MOSFET的栅极来类比地实现 以预定间隔进行正弦函数。 或者，使用脉冲宽度调制来控制MOSFET的栅极，使得通过LED的平均电流模拟正弦函数。 除了使用简单的正弦波功能之外，还可以根据包含多个不同频率的正弦波的“和弦”来控制LED电流。

公开(公告)号：WO2013025573A2

公开(公告)日：2013-02-21

申请号：PCT/US2012/050494

申请日：2012-08-12

Applicant: ADVANCED ANALOGIC TECHNOLOGIES, INC. ,  WILLIAMS, Richard, K. ,  LIN, Keng, Hung

Inventor： WILLIAMS, Richard, K. ,  LIN, Keng, Hung

IPC: H01L23/488 ,  H01L23/495

CPC classification number: H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49572 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11505 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13186 ,  H01L2224/13187 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/14131 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/81191 ,  H01L2224/81211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/05442 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/05552

Abstract: A semiconductor die is solder bump-bonded to a leadframe or circuit board using solder balls having cores made of a material with a melting temperature higher than the melting temperature of the solder to ensure that in the finished structure the die is parallel to the leadframe or circuit hoard.

Abstract translation: 半导体管芯利用具有由熔化温度高于焊料的熔化温度的材料制成的芯的焊球来焊接凸点结合到引线框架或电路板，以确保在完成的结构 芯片平行于引线框架或电路板。

公开(公告)号：WO2013025576A1

公开(公告)日：2013-02-21

申请号：PCT/US2012/050497

申请日：2012-08-12

Applicant: ADVANCED ANALOGIC TECHNOLOGIES, INC. ,  LIN, Keng, Hung ,  WILLIAMS, Richard, K.

Inventor： LIN, Keng, Hung ,  WILLIAMS, Richard, K.

IPC: H01L21/00

CPC classification number: H01L23/4334 ,  H01L21/4828 ,  H01L23/3677 ,  H01L23/49548 ,  H01L23/49568 ,  H01L24/05 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05096 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: In a bump-on-leadframe semiconductor package a metal bump formed on a integrated circuit die is used to facilitate the transfer of heat generated in a semiconductor substrate to a metal heat slug and then to an external mounting surface. A structure including arrays of thermal vias may be used to transfer the heat from the semiconductor substrate to the metal bump

Abstract translation: 在凸起引导框半导体封装中，形成在集成电路管芯上的金属凸块用于促进将在半导体衬底中产生的热量传递到金属加热块，然后转移到外部安装表面。 包括热通孔阵列的结构可用于将热量从半导体衬底转移到金属凸块