公开(公告)号：WO2019147493A1

公开(公告)日：2019-08-01

申请号：PCT/US2019/014207

申请日：2019-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ALLEN, Adolph M. ,  SAVANDAIAH, Kirankumar Neelasandra ,  SCHMIEDING, Randal D. ,  FAUNE, Vanessa

IPC: H01L21/687 ,  H01L21/683 ,  C23C14/34

Abstract: A process kit comprises a shield and ring assembly for positioning about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall configured to surround a sputtering target and a sloped portion of a bottom wall having a substantially straight profile with gas conductance holes configured to surround the substrate support. The ring assembly comprises a cover ring having a bulb-shaped protuberance about the periphery of the ring. The bulb-shaped protuberance of the cover ring is able to block a line-of-sight between the gas conductance holes on the shield and an entrance to a chamber body cavity in the processing chamber.

公开(公告)号：WO2011109337A3

公开(公告)日：2011-09-09

申请号：PCT/US2011/026601

申请日：2011-03-01

Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad M. ,  DEDORE, Ronald D. ,  COX, Michael S. ,  MILLER, Keith A. ,  YOUNG, Donny ,  FORSTER, John C. ,  ALLEN, Adolph M. ,  HAWRYLCHAK, Lara

Inventor： RASHEED, Muhammad M. ,  DEDORE, Ronald D. ,  COX, Michael S. ,  MILLER, Keith A. ,  YOUNG, Donny ,  FORSTER, John C. ,  ALLEN, Adolph M. ,  HAWRYLCHAK, Lara

IPC: C23C14/34 ,  C23C14/54 ,  C23C14/35

Abstract: Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

公开(公告)号：WO2020251716A1

公开(公告)日：2020-12-17

申请号：PCT/US2020/032612

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ALLEN, Adolph M. ,  FAUNE, Vanessa ,  HUA, Zhong Qiang ,  SAVANDAIAH, Kirankumar Neelasandra ,  SUBRAMANI, Anantha K. ,  KRAUS, Philip A. ,  GUNG, Tza-Jing ,  ZHOU, Lei ,  CHONG, Halbert ,  SONI, Vaibhav ,  KALATHIPARAMBIL, Kishor

IPC: C23C14/56 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

公开(公告)号：WO2020036804A1

公开(公告)日：2020-02-20

申请号：PCT/US2019/045709

申请日：2019-08-08

Applicant: APPLIED MATERIALS, INC.

Inventor： KALATHIPARAMBIL, Kishor ,  ALLEN, Adolph M. ,  LEI, Jianxin ,  RAMALINGAM, Jothilingam ,  BABAYAN, Viachslav

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/04 ,  C23C14/14

Abstract: Methods of forming a film layer using a HiPIMS PVD process include providing a bias to a substrate in a processing region of a process chamber, the substrate comprising a surface feature and the processing region of the process chamber comprising a sputter target, delivering at least one energy pulse to the sputter target to create a sputtering plasma of a sputter gas in the processing region, the at least one energy pulse having an average voltage between about 600 volts and about 1500 volts and an average current between about 50 amps and about 1000 amps at a frequency which is less than 5 kHz and greater than 100 Hz, and directing the sputtering plasma toward the sputter target to form an ionized species comprising material sputtered from the sputter target, the ionized species forming a film in the feature of the substrate having improved bottom coverage.

公开(公告)号：WO2019245955A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/037446

申请日：2019-06-17

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Xiangjin ,  LI, Rui ,  YOSHIDOME, Goichi ,  ALLEN, Adolph M. ,  TANG, Xianmin

IPC: H01L21/02 ,  H01L21/22 ,  H01L21/768 ,  H01L21/3065 ,  H01J37/32 ,  H05H1/46

Abstract: Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers.