公开(公告)号：WO2008005892A2

公开(公告)日：2008-01-10

申请号：PCT/US2007/072577

申请日：2007-06-29

申请人： APPLIED MATERIALS, INC. ,  KRISHNA, Nety M. ,  HOFMANN, Ralf ,  SINGH, Kaushal K. ,  ARMSTRONG, Karl J.

发明人： KRISHNA, Nety M. ,  HOFMANN, Ralf ,  SINGH, Kaushal K. ,  ARMSTRONG, Karl J.

IPC分类号： B05D3/04

CPC分类号： H01L21/28273 ,  H01L29/42332 ,  H01L29/7881

摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5Œ1012 cm-2, preferably, at least about 8Œ1012 cm-2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.

摘要翻译： 在一个实施例中，提供了用于在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于柱 处理工艺;在隧道介电层上形成金属纳米晶层;以及在金属纳米晶层上形成介电覆盖层。 该方法还提供了形成具有至少约5×1012cm-2，优选至少约8×1012cm-2的纳米晶体密度的金属纳米晶体层。 在一个例子中，金属纳米晶层包含铂，钌或镍。 在另一个实施方案中，提供了用于在基底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶体层上的中间介电层。 一些例子包括10,50,100,200或更多的双层。

公开(公告)号：WO2007121336A2

公开(公告)日：2007-10-25

申请号：PCT/US2007/066596

申请日：2007-04-13

申请人： APPLIED MATERIALS, INC. ,  WEIDMAN, Timothy W. ,  ARMSTRONG, Karl J. ,  EAGLESHAM, David J. ,  KRISHNA, Nety ,  HOFMANN, Ralf ,  STEWART, Michael P.

发明人： WEIDMAN, Timothy W. ,  ARMSTRONG, Karl J. ,  EAGLESHAM, David J. ,  KRISHNA, Nety ,  HOFMANN, Ralf ,  STEWART, Michael P.

IPC分类号： H01M4/92 ,  H01M8/02 ,  H01M4/88

CPC分类号： H01M4/8867 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/3455 ,  H01M4/8817 ,  H01M4/92 ,  H01M8/0206 ,  H01M8/021 ,  H01M8/023 ,  H01M8/0236 ,  H01M8/0245 ,  H01M8/086 ,  H01M8/1004 ,  Y02P70/56

摘要： The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.

摘要翻译： 本发明一般涉及燃料电池部件的制造和形成具有改善的寿命，降低生产成本和改进工艺性能的各种燃料电池部件的方法。 本发明通常包括通过沉积对基材具有良好粘附性的材料层或低层电阻（高导电性）并且在燃料电池操作期间具有良好的抗化学侵蚀性能来处理或调理基材表面。 基板可以是例如燃料电池部件，导电板，隔板，双极板或端板等。 在一个实施方案中，通过将其至少一部分暴露于包含四氧化钌的气体或液体来处理或调理基底表面。

公开(公告)号：WO2022020101A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/040879

申请日：2021-07-08

申请人： APPLIED MATERIALS, INC.

发明人： CEBALLOS, Andrew ,  GODET, Ludovic ,  ARMSTRONG, Karl J. ,  HOURANI, Rami

IPC分类号： G02B1/02 ,  C23C14/34 ,  C23C14/08 ,  C23C14/06 ,  C23C14/00 ,  C23C16/40 ,  C23C16/34 ,  C23C16/505

摘要： Embodiments of the present disclosure relate to optical device films and methods of forming optical device films. Specifically, embodiments described herein provide for an optical device film having a constant oxygen-concentration, a first concentration profile of the first material, and a second concentration profile of the second material. The first material, described and referenced to herein, has a first refractive index about 2.0 or greater and the second material has a second refractive index less than 2.0.

公开(公告)号：WO2019147495A1

公开(公告)日：2019-08-01

申请号：PCT/US2019/014250

申请日：2019-01-18

申请人： APPLIED MATERIALS, INC.

发明人： ARMSTRONG, Karl J. ,  FU, Jinxin ,  BANEZ, Wilson

IPC分类号： G02B26/00

摘要： Embodiments described herein relate to methods and materials for optical device fabrication. In one embodiment, a method of fabricating an optical device is provided. The method includes depositing a dielectric film on a substrate, depositing a wetting layer on the dielectric film, and depositing a metal containing film on the wetting layer. In another embodiment, an optical device is provided. The device includes a substrate, a dielectric film deposited on and contacting the substrate, a wetting layer deposited on and contacting the dielectric film, and a metal containing film deposited on and contacting the wetting layer.

公开(公告)号：WO2022150099A1

公开(公告)日：2022-07-14

申请号：PCT/US2021/059006

申请日：2021-11-11

申请人： APPLIED MATERIALS, INC.

发明人： ARMSTRONG, Karl J. ,  OHNO, Kenichi ,  PORTILLO RIVERA, Alexia Adilene ,  CEBALLOS, Andrew ,  HOURANI, Rami ,  COHEN, Brian Alexander

IPC分类号： G02B5/08 ,  G02B1/02

摘要： Embodiments of the present disclosure generally relate to encapsulated optical devices and methods for fabricating the encapsulated optical devices. In one or more embodiments, a method for encapsulating an optical device includes depositing a metallic silver layer on a substrate, depositing a barrier layer on the metallic silver layer, where the barrier layer contains silicon nitride, a metallic element, a metal nitride, or any combination thereof, and depositing an encapsulation layer containing silicon oxide on the barrier layer.

公开(公告)号：WO2022020077A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/039790

申请日：2021-06-30

申请人： APPLIED MATERIALS, INC.

发明人： CEBALLOS, Andrew ,  GODET, Ludovic ,  ARMSTRONG, Karl J. ,  HOURANI, Rami

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  C23C16/24 ,  C23C16/30 ,  G02B1/02 ,  C23C14/56

摘要： Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.

公开(公告)号：WO2019094121A1

公开(公告)日：2019-05-16

申请号：PCT/US2018/053894

申请日：2018-10-02

申请人： APPLIED MATERIALS, INC.

发明人： GOPALAKRISHNAN NAIR, Girish Kumar ,  HERLE, Subramanya P. ,  ARMSTRONG, Karl J.

IPC分类号： H01M4/1395 ,  H01M4/134 ,  H01M4/62 ,  H01M4/66 ,  H01M10/052 ,  H01M4/38

CPC分类号： H01M4/366 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/134 ,  H01M4/382 ,  H01M4/62 ,  H01M4/661 ,  H01M4/667 ,  H01M2004/027

摘要： Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.