公开(公告)号：WO2023038773A1

公开(公告)日：2023-03-16

申请号：PCT/US2022/040803

申请日：2022-08-18

Applicant: APPLIED MATERIALS, INC.

Inventor： RAMASWAMY, Kartik ,  YANG, Yang ,  GUO, Yue

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pseudo-staircase waveform that includes coupling, during a first phase of generating a waveform, a first voltage supply to an output node; coupling, during a second phase of generating the waveform, a first capacitor between the output node and an electrical ground node; and coupling during a third phase of generating the waveform, the first capacitor and a second capacitor in a series path between the output node and the electrical ground node.

公开(公告)号：WO2022265838A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/031072

申请日：2022-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  GUO, Yue ,  RAMASWAMY, Kartik

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pulsed-voltage waveform that includes coupling a main voltage source to an electrode during a first phase of a process of generating a pulsed-voltage waveform, wherein the electrode is disposed within a processing chamber, coupling a ground node to the electrode during a second phase of the process of generating the pulsed-voltage waveform, coupling a first compensation voltage source to the electrode during a third phase of the process of generating the pulsed-voltage waveform, and coupling a second compensation voltage source to the electrode during a fourth phase of the process of generating the pulsed-voltage waveform.

公开(公告)号：WO2022256086A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/024678

申请日：2022-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  GUO, Yue ,  RAMASWAMY, Kartik

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：WO2018237113A1

公开(公告)日：2018-12-27

申请号：PCT/US2018/038696

申请日：2018-06-21

Applicant: APPLIED MATERIALS, INC.

Inventor： COLLINS, Kenneth S. ,  RICE, Michael R. ,  RAMASWAMY, Kartik ,  CARDUCCI, James D. ,  RAUF, Shahid ,  BERA, Kallol ,  GUO, Yue

IPC: H01J37/32

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

公开(公告)号：WO2018175182A1

公开(公告)日：2018-09-27

申请号：PCT/US2018/022453

申请日：2018-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  RAMASWAMY, Kartik ,  COLLINS, Kenneth S. ,  LANE, Steven ,  MONROY, Gonzalo Antonio ,  CHEN, Lucy ,  GUO, Yue ,  VENKATASUBRAMANIAN, Eswaranand

IPC: H01J37/32 ,  C23C14/22

Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

公开(公告)号：WO2022235544A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/027230

申请日：2022-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： GUO, Yue ,  KUTTANNAIR, Krishna Kumar ,  YU, Jie ,  RAMASWAMY, Kartik ,  YANG, Yang

IPC: H01J37/32 ,  H03H7/38

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

公开(公告)号：WO2022026127A1

公开(公告)日：2022-02-03

申请号：PCT/US2021/040380

申请日：2021-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： DORF, Leonid ,  DHINDSA, Rajinder ,  ROGERS, James ,  BYUN, Daniel Sang ,  KAMENETSKIY, Evgeny ,  GUO, Yue ,  RAMASWAMY, Kartik ,  TODOROW, Valentin N. ,  LUERE, Olivier

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：WO2020072482A1

公开(公告)日：2020-04-09

申请号：PCT/US2019/054049

申请日：2019-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： WANG, Haitao ,  CHAFIN, Michael, G. ,  RAMASWAMY, Kartik ,  GUO, Yue ,  TODOROW, Valentin ,  DOAN, Kenny ,  SHOJI, Sergio, F. ,  MAYS, Brad, L. ,  DADU, Usama

IPC: H01L21/683 ,  H01L21/67 ,  H02N13/00 ,  B23Q3/15

Abstract: A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

公开(公告)号：WO2022266277A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/033712

申请日：2022-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： GUO, Yue ,  YANG, Yang ,  RAMASWAMY, Kartik

IPC: H01J37/32

Abstract: Methods for detecting arcs in power delivery systems for plasma process chambers leverage visible arc detection sensors to facilitate in locating the arc and shutting down a power source associated with arc location. In some embodiments, the method includes receiving an arc indication from an arc detection sensor operating in a visible light spectrum where the at least one arc detection sensor is positioned in an assembly of a power delivery system for a plasma process chamber, determining a location of the arc indication by an arc detection controller of the plasma process chamber, and activating a safety interlock signal to the power source of the power delivery system of the plasma process chamber when the at least one arc indication exceeds a threshold value. The safety interlock signal controls a power status of the power source and activating the safety interlock signal removes power source power.

公开(公告)号：WO2021086570A1

公开(公告)日：2021-05-06

申请号：PCT/US2020/054784

申请日：2020-10-08

Applicant: APPLIED MATERIALS, INC.

Inventor： RAMASWAMY, Kartik ,  YANG, Yang ,  COLLINS, Kenneth ,  LANE, Steven ,  MONROY, Gonzalo ,  GUO, Yue

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.