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    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL
    1.
    发明申请
    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL 审中-公开
    具有室壁温度控制的等离子体反应器

    公开(公告)号：WO2013062834A1

    公开(公告)日：2013-05-02

    申请号：PCT/US2012/060686

    申请日：2012-10-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： YOUSIF, Imad ,  SALINAS, Martin Jeffrey ,  BANNA, Samer ,  NGUYEN, Andrew ,  TODOROW, Valentin ,  LUBOMIRSKY, Dmitry ,  AGARWAL, Ankur ,  BERA, Kallol

    IPC: H05H1/24 ,  H05H1/28 ,  H01L21/205

    CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定在所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

    HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL
    4.
    发明申请
    HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL 审中-公开
    高效率三线圈电感耦合等离子体源相控

    公开(公告)号：WO2013062929A1

    公开(公告)日：2013-05-02

    申请号：PCT/US2012/061410

    申请日：2012-10-23

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BANNA, Samer ,  BISHARA, Waheb ,  GIAR, Ryan ,  TODOROW, Valentin ,  LUBOMIRSKY, Dmitry ,  TANTIWONG, Kyle

    IPC: H05H1/46 ,  H01F38/14 ,  H01L21/3065

    CPC classification number: H05H1/46 ,  H05H2001/4667

    Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

    Abstract translation: 等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈 ，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽件被配置为局部引导 由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位 线圈。

    EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY
    7.
    发明申请
    EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY 审中-公开
    扩展和独立的RF供电CATHODE基板，用于极端边缘可扩展性

    公开(公告)号：WO2013089910A1

    公开(公告)日：2013-06-20

    申请号：PCT/US2012/060314

    申请日：2012-10-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： TODOROW, Valentin ,  BANNA, Samer ,  YOUSIF, Imad ,  WANG, Albert ,  LERAY, Gary

    IPC: H05H1/34 ,  H05H1/46 ,  H01L21/3065

    CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在所述第一电极的所述第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

    ELECTROSTATIC CHUCK
    8.
    发明申请
    ELECTROSTATIC CHUCK 审中-公开
    静电卡

    公开(公告)号：WO2013062833A1

    公开(公告)日：2013-05-02

    申请号：PCT/US2012/060682

    申请日：2012-10-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BANNA, Samer ,  TODOROW, Valentin ,  LUBOMIRSKY, Dmitry

    IPC: H01L21/683 ,  H02N13/00 ,  B23Q3/15

    CPC classification number: H01L21/6831 ,  H01J37/32715 ,  H02N13/00

    Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and retaining a substrate having a given width may include a dielectric member having a support surface configured to support a substrate having a given width; an electrode disposed within the dielectric member beneath the support surface and extending from a center of the dielectric member outward to an area beyond an outer periphery of the substrate as defined by the given width of the substrate; an RF power source coupled to the electrode; and a DC power source coupled to the electrode.

    Abstract translation: 本文提供了静电卡盘的实施例。 在一些实施例中，用于支撑和保持具有给定宽度的基底的静电卡盘可以包括电介质构件，其具有构造成支撑具有给定宽度的基底的支撑表面; 所述电极设置在所述电介质构件的所述支撑表面下方并且从所述电介质构件的中心向外延伸到由所述衬底的给定宽度限定的超过所述衬底的外周的区域; 耦合到所述电极的RF电源; 以及耦合到电极的DC电源。

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