公开(公告)号：WO2018175182A1

公开(公告)日：2018-09-27

申请号：PCT/US2018/022453

申请日：2018-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  RAMASWAMY, Kartik ,  COLLINS, Kenneth S. ,  LANE, Steven ,  MONROY, Gonzalo Antonio ,  CHEN, Lucy ,  GUO, Yue ,  VENKATASUBRAMANIAN, Eswaranand

IPC: H01J37/32 ,  C23C14/22

Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

公开(公告)号：WO2018004973A1

公开(公告)日：2018-01-04

申请号：PCT/US2017/035434

申请日：2017-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  CHEN, Lucy ,  ZHOU, Jie ,  RAMASWAMY, Kartik ,  COLLINS, Kenneth S. ,  NEMANI, Srinivas D. ,  YING, Chentsau ,  LIU, Jingjing ,  LANE, Steven ,  MONROY, Gonzalo ,  CARDUCCI, James D.

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Abstract translation: 提供了用于形成具有期望膜密度，机械强度和光学膜性能的类金刚石碳层的方法。 在一个实施例中，形成类金刚石碳层的方法包括在布置在处理室中的衬底的表面上方产生电子束等离子体，并且在衬底的表面上形成类金刚石碳层。 类金刚石碳层通过电子束等离子体工艺形成，其中类金刚石碳层在半导体应用中的蚀刻工艺中用作硬掩模层。 类金刚石碳层可以通过轰击设置在处理室中的含碳电极来形成，以在包含碳的气体混合物中产生二次电子束至设置在处理室中的衬底的表面，并且形成类金刚石碳层 在衬底的表面上与气体混合物的元素接触。

公开(公告)号：WO2016160104A1

公开(公告)日：2016-10-06

申请号：PCT/US2016/014366

申请日：2016-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： LEE, Gene ,  CHEN, Lucy

IPC: H01L21/027

CPC classification number: H01L21/31133 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

Abstract: A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.

Abstract translation: 硬掩模层沉积在衬底上的特征层上。 硬掩模层包括有机掩模层。 在大于室温的第一温度下，使用包含卤素元素的第一气体形成有机掩模层中的开口，以暴露特征层的一部分。 在一个实施方案中，将包含卤素元素的气体供应到室。 使用卤素元素在第一温度下蚀刻在衬底上的绝缘层上的有机掩模层，以形成露出绝缘层的一部分的开口。