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    SEMICONDUCTOR PROCESSING CHAMBER AND METHODS FOR CLEANING THE SAME
    1.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBER AND METHODS FOR CLEANING THE SAME 审中-公开

    公开(公告)号：WO2021021518A1

    公开(公告)日：2021-02-04

    申请号：PCT/US2020/043082

    申请日：2020-07-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： PANDEY, Vishwas Kumar ,  PRABHAKAR, Vinay ,  AFZAL, Bushra ,  RAMAMURTHI, Badri ,  ROCHA, Juan C.

    IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

    Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

    GAS SUPPLY MEMBER WITH BAFFLE
    7.
    发明申请
    GAS SUPPLY MEMBER WITH BAFFLE 审中-公开

    公开(公告)号：WO2019027863A1

    公开(公告)日：2019-02-07

    申请号：PCT/US2018/044293

    申请日：2018-07-30

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SHAH, Kartik ,  PANDEY, Vishwas Kumar ,  PRADHAN, Kailash ,  TALLAVARJULA, Sairaju ,  GEORGE, Rene ,  SHONO, Eric Kihara ,  BOTTINI, Philip A. ,  CURTIS, Roger

    IPC: H01L21/67 ,  C23C16/44

    Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

    EFFECTIVE AND NOVEL DESIGN FOR LOWER PARTICLE COUNT AND BETTER WAFER QUALITY BY DIFFUSING THE FLOW INSIDE THE CHAMBER
    8.
    发明申请
    EFFECTIVE AND NOVEL DESIGN FOR LOWER PARTICLE COUNT AND BETTER WAFER QUALITY BY DIFFUSING THE FLOW INSIDE THE CHAMBER 审中-公开
    通过在房间内扩散流动来有效和新颖地设计下颗粒计数和更好的晶粒质量

    公开(公告)号：WO2017209802A1

    公开(公告)日：2017-12-07

    申请号：PCT/US2017/014864

    申请日：2017-01-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： PANDEY, Vishwas Kumar ,  SHAH, Kartik ,  TONG, Edric ,  VASUDEVA, Prashanth

    IPC: H01L21/02 ,  H01L21/67

    Abstract: Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.

    Abstract translation: 这里描述的实施例总体上涉及具有位于处理室的底部的一个或多个气体入口的处理室。 通过一个或多个气体入口端口流入处理腔室的气体通过位于每个所述一个或多个气体入口端口上的板或通过一个或多个气体入口端口中的每一个的成角度开口沿处理腔室的下侧壁引导， 更多的进气口。 一个或多个气体入口和板可位于处理室的一端，并且气流通过板或成角度的开口被引向位于处理室的相对端的排气口。 因此，更多的气体可以流入处理室而不会从处理室的盖子中移出颗粒。

    INJECTION MODULE FOR A PROCESS CHAMBER
    9.
    发明申请
    INJECTION MODULE FOR A PROCESS CHAMBER 审中-公开

    公开(公告)号：WO2023081008A1

    公开(公告)日：2023-05-11

    申请号：PCT/US2022/046954

    申请日：2022-10-18

    Applicant: APPLIED MATERIALS, INC.

    Inventor： OLSEN, Christopher S. ,  SHAH, Kartik Bhupendra ,  PRASAD, Chaitanya Anjaneyalu ,  PANDEY, Vishwas Kumar ,  BODEPUDI, Anil Kumar ,  HANSEN, Erika

    IPC: H01L21/67

    Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.

    BATCH THERMAL PROCESS CHAMBER
    10.
    发明申请
    BATCH THERMAL PROCESS CHAMBER 审中-公开

    公开(公告)号：WO2022031406A1

    公开(公告)日：2022-02-10

    申请号：PCT/US2021/041287

    申请日：2021-07-12

    Applicant: APPLIED MATERIALS, INC.

    Inventor： TANNOUS, Adel George ,  CHU, Schubert S. ,  LAU, Shu-Kwan ,  SHAH, Kartik Bhupendra ,  ZHU, Zuoming ,  MORADIAN, Ala ,  KUMAR, Surajit ,  RANGAPPA, Srinivasa ,  CHIN, Chia Cheng ,  PANDEY, Vishwas Kumar

    IPC: H01L21/67 ,  H05B3/00 ,  H01L21/687 ,  C30B25/10

    Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

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