公开(公告)号：WO2023027707A1

公开(公告)日：2023-03-02

申请号：PCT/US2021/047611

申请日：2021-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： KHO, Jeffrey ,  SHAO, Shouqian ,  CHEN, Jrjyan Jerry ,  SUN, Guangwei ,  HUH, Kwang Soo ,  ZHAO, Lai ,  SUN, Zhelin ,  SU, Zonghui

IPC: C23C16/00 ,  C23C16/50

Abstract: A deposition chamber system includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure a substrate, and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide residual process gases out of the reactor after performing the deposition process.

公开(公告)号：WO2023277920A1

公开(公告)日：2023-01-05

申请号：PCT/US2021/040118

申请日：2021-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Guangwei ,  KHO, Jeffrey A. ,  ZHAO, Lai ,  SUN, Zhelin ,  BEHDJAT, Mehran ,  XU, Ming ,  CHOI, Kenric T. ,  HUH, Kwang Soo

IPC: C23C16/448 ,  H01J37/32 ,  C23C14/48

Abstract: The present disclosure is directed to a precursor delivery system is provided having a vaporizer and a reservoir. The reservoir includes an upstream end in fluid communication with the vaporizer. A reservoir valve is in fluid communication with a downstream end of the reservoir and a final valve is disposed downstream of the reservoir valve. A buffer zone is defined between the reservoir valve and the final valve. A first gas inlet is coupled to the buffer zone. The first gas inlet is coupled to a buffer valve.

公开(公告)号：WO2019032457A1

公开(公告)日：2019-02-14

申请号：PCT/US2018/045386

申请日：2018-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： BHUYAN, Bhaskar Jyoti ,  SALY, Mark ,  SUN, Zhelin ,  LI, Ning ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  LIU, Yijun ,  YANG, Lin

IPC: H01L21/02 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：WO2022225525A1

公开(公告)日：2022-10-27

申请号：PCT/US2021/028711

申请日：2021-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Zhelin ,  HUH, Kwangsoo ,  ZHAO, Lai ,  CHOI, Soo Yong

IPC: H01L27/12 ,  H01L27/32 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786

Abstract: Embodiments of the disclosure relate to articles and transistor structures and methods of preparation and use thereof, including a substrate and an amorphous oxide film overlaying at least a portion of the substrate, where the amorphous oxide film includes a first oxide and a second oxide. The first oxide can include zirconium oxide (ZrO2), hafnium oxide (HfO2) or a combination thereof, the second oxide can include silicon dioxide (SiO2), aluminum oxide (Al2O3), nitric oxide (NO) or combinations thereof. The amorphous oxide film can conformal and have a porosity of less than about 1% and may have a dielectric constant (k) of about 8 to about 28.

公开(公告)号：WO2018191484A1

公开(公告)日：2018-10-18

申请号：PCT/US2018/027280

申请日：2018-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Ning ,  SUN, Zhelin ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  BHUYAN, Bhaskar Jyoti ,  SALY, Mark

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67 ,  C23C16/455

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.