公开(公告)号：WO2003009346A2

公开(公告)日：2003-01-30

申请号：PCT/US2002/022006

申请日：2002-07-13

Applicant: APPLIED MATERIALS,INC. ,  QUILES, Efrain ,  BEHDJAT, Mehran ,  LOWRANCE, Robert, B. ,  RICE, Michael, Robert ,  VOPAT, Brent

Inventor： QUILES, Efrain ,  BEHDJAT, Mehran ,  LOWRANCE, Robert, B. ,  RICE, Michael, Robert ,  VOPAT, Brent

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  F24F9/00 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67766 ,  H01L21/68707 ,  Y10T137/0318

Abstract: In a first aspect, a first substrate processing system is provided that includes (1) a chamber having a plurality of openings through which a substrate may be transported; (2) a substrate carrier opener coupled to a first one of the plurality of openings; (3) a thermal processing chamber coupled to a second one of the plurality of openings; and (4) a wafer handler contained within the chamber, having a substrate clamping blade and a blade adapted to transport high temperature substrates. Numerous other aspects are provided, as are methods and computer program products in accordance with these and other aspects.

Abstract translation: 在第一方面，提供了一种第一基板处理系统，其包括：（1）具有多个开口的腔室，通过该开口可以输送基底; （2）耦合到所述多个开口中的第一个开口的衬底载体开启器; （3）耦合到多个开口中的第二个的热处理室; 和（4）包含在所述腔室内的晶片处理器，具有衬底夹紧刀片和适于传送高温衬底的刀片。 还提供了许多其他方面，以及根据这些和其他方面的方法和计算机程序产品。

公开(公告)号：WO2023277920A1

公开(公告)日：2023-01-05

申请号：PCT/US2021/040118

申请日：2021-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Guangwei ,  KHO, Jeffrey A. ,  ZHAO, Lai ,  SUN, Zhelin ,  BEHDJAT, Mehran ,  XU, Ming ,  CHOI, Kenric T. ,  HUH, Kwang Soo

IPC: C23C16/448 ,  H01J37/32 ,  C23C14/48

Abstract: The present disclosure is directed to a precursor delivery system is provided having a vaporizer and a reservoir. The reservoir includes an upstream end in fluid communication with the vaporizer. A reservoir valve is in fluid communication with a downstream end of the reservoir and a final valve is disposed downstream of the reservoir valve. A buffer zone is defined between the reservoir valve and the final valve. A first gas inlet is coupled to the buffer zone. The first gas inlet is coupled to a buffer valve.

公开(公告)号：WO2015023352A1

公开(公告)日：2015-02-19

申请号：PCT/US2014/042025

申请日：2014-06-12

Applicant: APPLIED MATERIALS, INC.

Inventor： BEHDJAT, Mehran ,  HUNTER, Aaron Muir ,  RANISH, Joseph M. ,  TAM, Norman L. ,  TOBIN, Jeffrey ,  LI, Jiping ,  TRAN, Martin

IPC: H01L21/683 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.

Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括具有内周表面和外周表面的环体，其中环体包括不透明的石英玻璃材料，并且其中环体涂覆有光学透明层。 光学透明层的热膨胀系数基本上与不透明的石英玻璃材料匹配或类似，以减少在高热负荷下可能引起热应力的热膨胀失配。 在一个实例中，不透明石英玻璃材料是合成黑色石英，光学透明层包括透明的熔融石英材料。

公开(公告)号：WO2006107703A1

公开(公告)日：2006-10-12

申请号：PCT/US2006/011644

申请日：2006-03-13

Applicant: APPLIED MATERIALS, INC. ,  YOKOTA, Yoshitaka ,  RAMAMURTHY, Sundar ,  ACHUTHARAMAN, Vedapuram ,  CZARNIK, Cory ,  BEHDJAT, Mehran ,  OLSEN, Christopher

Inventor： YOKOTA, Yoshitaka ,  RAMAMURTHY, Sundar ,  ACHUTHARAMAN, Vedapuram ,  CZARNIK, Cory ,  BEHDJAT, Mehran ,  OLSEN, Christopher

IPC: H01L21/302 ,  C23F1/02

CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator (134) is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber (10) through a water-cooled injector (140) projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O 2 , enter the chamber through another inlet (122) . The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800°C. Alternatively, the oxidation may be performed in an LPCVD chamber (210) including a pedestal heater (230) and a showerhead gas injector (220) in opposition to the pedestal (216).

Abstract translation: 一种用于氧化半导体集成电路中的材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器（134）能够产生至少70％的臭氧流。 臭氧通过突出到室中的水冷喷射器（140）进入RTP室（10）。 诸如氢气以提高氧化速率的其它气体，诸如氮气或O 2 O 2的稀释气体通过另一个入口（122）进入腔室。 该室被保持在低于20托的低压，并且基板有利地保持在低于800℃的温度。 或者，氧化可以在包括基座加热器（230）和与基座（216）相对的喷头气体喷射器（220）的LPCVD腔室（210）中进行。

公开(公告)号：WO2015102781A1

公开(公告)日：2015-07-09

申请号：PCT/US2014/067367

申请日：2014-11-25

Applicant: APPLIED MATERIALS, INC.

Inventor： BEHDJAT, Mehran ,  TAM, Norman L. ,  HUNTER, Aaron Muir ,  RANISH, Joseph M. ,  NAKANISHI, Koji ,  NAKAGAWA, Toshiyuki

IPC: H01L21/683

CPC classification number: H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract translation: 提供了用于半导体处理的支撑环。 支撑环包括由内边缘和外边缘限定的环形体。 内边缘和外边缘围绕中心轴线是同心的。 环形体还包括在内边缘处从环形体的第一侧延伸的第一侧，第二侧和凸起的环形肩部。 支撑环还包括在第一侧上的涂层。 涂层具有邻近凸起的环形肩部的厚度减小的内部区域。

公开(公告)号：WO2010056615A2

公开(公告)日：2010-05-20

申请号：PCT/US2009/063671

申请日：2009-11-09

Applicant: APPLIED MATERIALS, INC. ,  KURITA, Shinichi ,  BEHDJAT, Mehran ,  INAGAWA, Makoto

Inventor： KURITA, Shinichi ,  BEHDJAT, Mehran ,  INAGAWA, Makoto

IPC: H01L21/00 ,  H01L21/02

CPC classification number: B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

Abstract: Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

Abstract translation: 这里公开的实施例涉及已经焊接在一起的大型真空腔体。 腔室主体可以在其中的至少一个表面上具有高发射率涂层。 由于腔体的大尺寸，腔体可以通过将多个零件焊接在一起而不是由单件金属锻造主体来形成。 这些部件可以在离开主体角部的位置处被焊接在一起，该位置可能在抽空期间处于最大应力下，以确保可能是身体中最弱点的焊接不会失效。 腔室主体的至少一个表面可以涂覆有高发射率涂层以帮助来自进入的，加热的基板的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底的生产量。

公开(公告)号：WO2009091640A3

公开(公告)日：2009-07-23

申请号：PCT/US2009/030263

申请日：2009-01-07

Applicant: APPLIED MATERIALS, INC. ,  LERNER, Alexander N. ,  KOELMEL, Blake ,  BEHDJAT, Mehran

Inventor： LERNER, Alexander N. ,  KOELMEL, Blake ,  BEHDJAT, Mehran

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/324

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

公开(公告)号：WO2020122884A1

公开(公告)日：2020-06-18

申请号：PCT/US2018/065049

申请日：2018-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BEHDJAT, Mehran ,  KAO, Chien-Teh ,  ZHAO, Lai ,  RUI, Xiangxin ,  ZHOU, Jianhua

IPC: C23C16/448

Abstract: An ampoule having a container, an inlet port, an outlet port, splashguard and a diffuser. The diffuser is disposed within a cavity of the container and comprises a feed tube and a nozzle. The feed tube is coupled to the inlet port and the nozzle is coupled to the feed tube. The nozzle has a closed ring shape and comprises a plurality of holes. A centerline of each of the plurality of holes is oriented at or below a horizontal line of the nozzle to direct fluid away from a lid of the container. The splashguard is coupled to an output port of the ampoule.

公开(公告)号：WO2017180283A2

公开(公告)日：2017-10-19

申请号：PCT/US2017/022468

申请日：2017-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： HUNTER, Aaron Muir ,  BEHDJAT, Mehran ,  MERCHANT, Niraj ,  MCALLISTER, Douglas R. ,  IU, Dongming ,  CHAN, Kong Lung Samuel ,  HAWRYLCHAK, Lara

IPC: H01L21/67 ,  H01L21/54 ,  H01L21/02

Abstract: A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

Abstract translation: 描述了一种半导体加工设备，其具有在本体内具有限定两个处理室的壁的本体; 穿过壁的通道在两个处理室之间形成流体耦合; 可移除地联接到所述主体的盖，所述盖具有与所述通道流体连通的入口; 气体激活器，耦合到处理室外部的盖子，气体激活器具有与盖子的入口流体连通的出口; 设置在每个处理室中的衬底支撑件，每个衬底支撑件具有至少两个加热区，每个加热区具有嵌入式加热元件; 耦合到面对每个衬底支撑件的盖的气体分配器; 以及在每个气体分配器的边缘连接到盖子的热控制构件。

公开(公告)号：WO2013052262A1

公开(公告)日：2013-04-11

申请号：PCT/US2012/055581

申请日：2012-09-14

Applicant: APPLIED MATERIALS, INC. ,  HUNTER, Aaron Muir ,  BEHDJAT, Mehran ,  ADAMS, Bruce E.

Inventor： HUNTER, Aaron Muir ,  BEHDJAT, Mehran ,  ADAMS, Bruce E.

IPC: H01L21/268 ,  H01L21/324

CPC classification number: B23K26/127 ,  B23K26/142 ,  B23K26/1464

Abstract: The present invention generally relates to a laser processing systems for thermally processing substrates. The laser processing systems include a shield disposed between an energy source of the laser processing system and a substrate which is to be thermally processed. The shield includes an optically transparent window disposed adjacent to a cavity within the shield. The optically transparent window allows annealing energy to pass therethrough and to illuminate the substrate. The shield also includes one or more gas inlets and one or more gas outlets for introducing and removing a purge gas from the cavity within the shield. The purge gas is utilized to remove volatized or ablated components during thermal processing, and to provide a gas of predetermined composition, such as oxygen-free, to the thermally processed area.

Abstract translation: 本发明一般涉及一种用于热处理衬底的激光加工系统。 激光处理系统包括设置在激光加工系统的能量源和待热处理的基板之间的屏蔽。 护罩包括邻近护罩内的空腔设置的光学透明窗口。 光学透明窗口允许退火能量通过并照射基板。 屏蔽还包括一个或多个气体入口和一个或多个气体出口，用于从罩内的空腔引入和去除净化气体。 吹扫气体用于在热处理过程中除去挥发的或消融的组分，并且向热处理区域提供诸如无氧的预定组成的气体。