公开(公告)号：WO2007019467A8

公开(公告)日：2007-03-29

申请号：PCT/US2006030792

申请日：2006-08-07

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH J ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

CPC classification number: H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

公开(公告)号：WO2006124967A3

公开(公告)日：2007-09-27

申请号：PCT/US2006019029

申请日：2006-05-16

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

IPC: H01L21/31

CPC classification number: C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

Abstract: A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

Abstract translation: 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳处理气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

公开(公告)号：WO2009085965A4

公开(公告)日：2009-08-27

申请号：PCT/US2008087446

申请日：2008-12-18

Applicant: APPLIED MATERIALS INC ,  RAMASWAMY KARTIK ,  COLLINS KENNETH S ,  GALLO BIAGIO ,  HANAWA HIROJI ,  FOAD MAJEED A ,  HILKENE MARTIN A ,  SANTHANAM KARTIK ,  SCOTNEY-CASTLE MATTHEW D

Inventor： RAMASWAMY KARTIK ,  COLLINS KENNETH S ,  GALLO BIAGIO ,  HANAWA HIROJI ,  FOAD MAJEED A ,  HILKENE MARTIN A ,  SANTHANAM KARTIK ,  SCOTNEY-CASTLE MATTHEW D

IPC: H01L21/265 ,  H01L21/306

CPC classification number: H01L21/2254 ,  H01L21/2253

Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

Abstract translation: 提供了用于从掺杂衬底去除过量掺杂剂的方法和设备。 在一个实施例中，衬底通过掺杂剂的表面沉积进行掺杂，随后形成覆盖层和热扩散驱入。 向处理室提供反应性蚀刻剂混合物（具有可选等离子体）以蚀刻掉封盖层并通过与过量掺杂剂反应形成挥发性化合物。 在另一个实施例中，通过能量注入掺杂剂来掺杂衬底。 利用可选的等离子体将反应气体混合物提供给处理室，以通过与掺杂剂反应形成挥发性化合物来去除吸附在表面上的过量掺杂剂和表面附近的高浓度掺杂剂。 可以在热处理期间提供反应性气体混合物，或者可以在不同于热处理温度的温度之前或之后提供反应性气体混合物。 挥发性化合物被除去。 如此处理的基材在工艺设备外储存或运输时不会形成有毒化合物。

公开(公告)号：WO2007019467A2

公开(公告)日：2007-02-15

申请号：PCT/US2006030792

申请日：2006-08-07

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH J ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

CPC classification number: H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

Abstract translation: 一种使用光学可写入掩模在半导体衬底上处理薄膜结构的方法包括：将衬底放置在反应室中，衬底在其表面上具有待按照预定图案蚀刻的目标层，并且沉积碳 - 通过（a）将含碳工艺气体引入室中，（b）在凹进路径中产生可重入的环形RF等离子体电流，所述凹进路径包括通过耦合等离子体RF源功率而覆盖工件的工艺区 到所述凹入路径的外部，以及（c）将RF等离子体偏置功率或偏置电压耦合到所述工件。 该方法还包括在含碳硬掩模层中光刻限定预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：WO2006124968A3

公开(公告)日：2007-11-08

申请号：PCT/US2006019030

申请日：2006-05-16

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

IPC: G01J1/40

CPC classification number: H05H1/46

Abstract: A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

Abstract translation: 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：WO2006116577A3

公开(公告)日：2007-10-11

申请号：PCT/US2006015971

申请日：2006-04-26

Applicant: APPLIED MATERIALS INC

Inventor： HANAWA HIROJI ,  NGUYEN ANDREW ,  COLLINS KENNETH S ,  RAMASWAMY KARTIK ,  GALLO BIAGIO ,  AL-BAYATI AMIR

IPC: H01T23/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small forms detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小型检测器感测由提升销施加的力足够大以指示夹紧的晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内 晶圆。

公开(公告)号：WO2007019455A3

公开(公告)日：2007-06-28

申请号：PCT/US2006030746

申请日：2006-08-07

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH J ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

IPC: H01L21/768 ,  B23K26/08

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

Abstract: A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the Line of light relative to the thin film structure in a direction transverse to the line of light.

Abstract translation: 一种在半导体衬底上形成用于薄膜结构的阻挡层的方法包括：在具有垂直侧壁的基底层中形成高纵横比开口;在高的表面上沉积包含阻挡金属的介电化合物的介电阻挡层 包括垂直侧壁的纵横比开口以及在第一阻挡层上沉积包含阻挡金属的金属阻挡层。 该方法还包括通过以下步骤回流金属阻挡层：（a）将来自连续波激光器阵列的光引导到至少部分地延伸穿过薄膜结构的光线中，以及（b）将光线相对于薄膜 在横向于光线的方向上的薄膜结构。

公开(公告)号：WO2006124966A2

公开(公告)日：2006-11-23

申请号：PCT/US2006019028

申请日：2006-05-16

Applicant: APPLIED MATERIALS INC

Inventor： RAMASWAMY KARTIK ,  HANAWA HIROJI ,  GALLO BIAGIO ,  COLLINS KENNETH S ,  MA KAI ,  PARIHAR VIJAY ,  JENNINGS DEAN ,  MAYUR ABHILASH ,  AL-BAYATI AMIR ,  NGUYEN ANDREW

IPC: C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01L21/3146 ,  C23C16/26 ,  C23C16/507 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/67115 ,  H01L21/67207

Abstract: An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.

Abstract translation: 一种用于处理半导体晶片的集成系统包括用于沉积吸热层的环形源等离子体反应器，所述反应器包括晶片支撑件，反应室，在其大致相对的侧面上连接到所述室的外部折入环形导管，RF源 用于将功率耦合到所述外部折返导管的一部分的电源施加器和包含吸热材料前体气体的处理气体源。 集成系统还包括光学退火室。