公开(公告)号：WO2016087069A1

公开(公告)日：2016-06-09

申请号：PCT/EP2015/071600

申请日：2015-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  DAVIES, Dylan,John,David ,  JANSSEN, Paul ,  TSUGAMA, Naoko ,  BRULS, Richard, Joseph ,  HOEKERD, Kornelis, Tijmen ,  JANSSEN, Edwin, Johannes, Maria ,  VAN DEN OEVER, Petrus, Johannes ,  VAN DER WILK, Ronald ,  VAN SCHIJNDEL, Antonius, Hubertus ,  VIEYRA SALAS, Jorge, Alberto

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/95 ,  H01L21/66 ,  H01L21/67

CPC classification number: G03F7/70616 ,  G01N21/9501 ,  G01N27/61 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70508 ,  G03F7/70783 ,  H01L22/12 ,  H01L22/20

Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors (202) within a lithographic apparatus, and/or a separate metrology tool (240). Other inspections tools (244, 248) perform wafer backside inspection to produce second measurement data (302). High- resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed (CORR) to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map (506) is used to identify potentially relevant clusters of defects in the more detailed original defect map (520). The responsible apparatus can be identified by pattern recognition (PREC) as part of automated root cause analysis, alternatively, reticle inspection data may be used as second measurement data (302).

Abstract translation: 诊断装置监视光刻制造系统。 使用光刻设备内的传感器（202）和/或单独的计量工具（240）获得表示跨越衬底的某些特性的局部偏差的第一测量数据。 其他检查工具（244,248）执行晶片背面检查以产生第二测量数据（302）。 将高分辨率背面缺陷图像处理成可与第一测量数据中的较低分辨率信息进行比较的形式。 执行互相关（CORR）以识别哪些观察到的缺陷在空间上与第一测量数据中表示的偏差相关联。 相关图（506）用于在更详细的原始缺陷图（520）中识别潜在相关的缺陷簇。 负责的设备可以通过模式识别（PREC）来识别，作为自动根本原因分析的一部分，或者，掩模版检查数据可以用作第二测量数据（302）。