公开(公告)号：WO2021013519A1

公开(公告)日：2021-01-28

申请号：PCT/EP2020/069001

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  CRAMER, Hugo, Augustinus, Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00 ,  G03F7/20 ,  G03F1/42

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：WO2012126684A1

公开(公告)日：2012-09-27

申请号：PCT/EP2012/052862

申请日：2012-02-20

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品特征和计量目标。 计量目标包括测量重叠的大目标和小目标。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线之内，而小目标则分布在产品区域内。

公开(公告)号：WO2021250034A1

公开(公告)日：2021-12-16

申请号：PCT/EP2021/065351

申请日：2021-06-08

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BIJNEN, Franciscus, Godefridus, Casper ,  ZWIER, Olger, Victor

IPC: G03F7/20 ,  G03F9/00 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

公开(公告)号：WO2019166190A1

公开(公告)日：2019-09-06

申请号：PCT/EP2019/052658

申请日：2019-02-04

Applicant: STICHTING VU ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  UNIVERSITEIT VAN AMSTERDAM ,  ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  TENNER, Vasco, Tomas ,  DEN BOEF, Arie, Jeffrey ,  CRAMER, Hugo, Augustinus, Joseph ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  JAK, Martin, Jacobus, Johan

IPC: G02B27/42 ,  G03F7/20 ,  G03H1/04 ,  G03H1/00

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：WO2019068459A1

公开(公告)日：2019-04-11

申请号：PCT/EP2018/075239

申请日：2018-09-18

Applicant: STICHTING VU ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  UNIVERSITEIT VAN AMSTERDAM ,  ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  DEN BOEF, Arie, Jeffrey ,  KOOLEN, Armand, Eugene, Albert ,  PANDEY, Nitesh ,  TENNER, Vasco, Tomas ,  COENE, Willem, Marie, Julia, Marcel ,  WARNAAR, Patrick

IPC: G01B11/24 ,  G03F7/20

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：WO2018206227A1

公开(公告)日：2018-11-15

申请号：PCT/EP2018/059606

申请日：2018-04-13

Applicant: ASML NETHERLANDS B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus, Johan ,  HAJIAHMADI, Mohammadreza ,  GRZELA, Grzegorz ,  MACHT, Lukasz, Jerzy

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：WO2015113724A1

公开(公告)日：2015-08-06

申请号：PCT/EP2014/079443

申请日：2014-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SMILDE, Hendrik, Jan, Hidde ,  AUER, Bastiaan, Onne, Fagginger ,  HARUTYUNYAN, Davit ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01B9/04 ,  G01B2210/56 ,  G01N2021/8822 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092

Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Abstract translation: 在使用小目标的暗场测量方法中，通过将组合拟合函数拟合到测量图像来确定使用单个衍射级获得的目标图像的特性。 组合拟合功能包括用于表示物理传感器和目标的方面的术语。 基于测量过程和/或目标的参数来确定组合拟合函数的一些系数。 在一个实施例中，组合拟合功能包括表示成像系统中瞳孔停止点的点扩展函数的jinc函数。

公开(公告)号：WO2012062858A1

公开(公告)日：2012-05-18

申请号：PCT/EP2011/069845

申请日：2011-11-10

Applicant: ASML NETHERLANDS B.V. ,  SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

Inventor： SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70641 ,  G06N99/005

Abstract: Methods are disclosed for measuring target structures (32-35) formed by a lithographic process on a substrate (W). A grating structure within said target is smaller than an illumination spot (31) and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor (19) and a second branch leading to a substrate plane imaging sensor (23). A spatial light modulator (SLM) (24, 124, 224, 324) is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Abstract translation: 公开了用于测量由基板（W）上的光刻工艺形成的目标结构（32-35）的方法。 所述目标内的光栅结构小于测量光学系统的照明光点（31）和视场。 光学系统具有通向光瞳平面成像传感器（19）的第一分支和通向基板平面成像传感器（23）的第二分支。 空间光调制器（SLM）（24,124,224,324）被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

公开(公告)号：WO2021151754A1

公开(公告)日：2021-08-05

申请号：PCT/EP2021/051167

申请日：2021-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius Jacobus ,  WARNAAR, Patrick ,  TENNER, Vasco, Tomas ,  CRAMER, Hugo, Augustinus, Joseph ,  LOMANS, Bram, Antonius, Gerardus ,  VAN DE VEN, Bastiaan, Lambertus, Wilhelmus, Marinus ,  CUNBUL, Ahmet, Burak ,  KONIJNENBERG, Alexander, Prasetya

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956

Abstract: Disclosed is a method of measuring a periodic structure on a substrate with illumination radiation having at least one wavelength, the periodic structure having at least one pitch. The method comprises configuring, based on a ratio of said pitch and said wavelength, one or more of: an illumination aperture profile comprising one or more illumination regions in Fourier space; an orientation of the periodic structure for a measurement; and a detection aperture profile comprising one or more separated detection regions in Fourier space. This configuration is such that: i) diffracted radiation of at least a pair of complementary diffraction orders is captured within the detection aperture profile, and ii) said diffracted radiation fills at least 80% of the one or more separated detection regions. The periodic structure is measured while applying the configured one or more of illumination aperture profile, detection aperture profile and orientation of the periodic structure.

公开(公告)号：WO2020088906A1

公开(公告)日：2020-05-07

申请号：PCT/EP2019/077463

申请日：2019-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  BOS, Hilko, Dirk ,  SMILDE, Hendrik, Jan, Hidde ,  HAJIAHMADI, Mohammadreza ,  MACHT, Lukasz, Jerzy ,  VAN DEN BOS, Karel, Hendrik, Wouter ,  SOKOLOV, Sergei ,  KUNNEMAN, Lucas, Tijn

IPC: G03F7/20 ,  G01N21/47 ,  H01L21/66

Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.