公开(公告)号：WO2022037875A1

公开(公告)日：2022-02-24

申请号：PCT/EP2021/070206

申请日：2021-07-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  SHI, Hongfei ,  FENG, Mu ,  ZHAO, Qian ,  WANG, Alvin, Jianjiang ,  XIAO, Yan-Jun ,  LIU, Liang

IPC: G03F7/20 ,  G06T7/00

Abstract: Described herein is a method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with gauges or contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.

公开(公告)号：WO2019179782A1

公开(公告)日：2019-09-26

申请号：PCT/EP2019/055691

申请日：2019-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： SHI, Hongfei ,  WANG, Jinze ,  YANG, Peng-cheng ,  WANG, Lei ,  FENG, Mu

IPC: G03F7/20

Abstract: The present disclosure pertains to a method for accelerating calibration of a fabrication process model, the method comprising performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process wafer; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process wafer.