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公开(公告)号：WO2021228725A1
公开(公告)日：2021-11-18
申请号：PCT/EP2021/062227
申请日：2021-05-07
Applicant: ASML NETHERLANDS B.V.
Inventor： HUANG, Jiao , ZHENG, Yunan , ZHAO, Qian , LIANG, Jiao , FAN, Yongfa , FENG, Mu
Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion (404A,406B) of the pattern is blocked (400,402), for example with a geometrical block mask (408,410), based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.
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2.发明申请
公开(公告)号：WO2021004725A1
公开(公告)日：2021-01-14
申请号：PCT/EP2020/066446
申请日：2020-06-15
Applicant: ASML NETHERLANDS B.V.
Inventor： WANG, Lei , CHEN, Yi-Yin , FENG, Mu , ZHAO, Qian
IPC: G03F7/20
Abstract: Systems and methods for reducing prediction uncertainty in a prediction model associated with a patterning process are described. These may be used in calibrating a process model associated with the patterning process, for example. Reducing the uncertainty in the prediction model may comprise determining a prediction uncertainty parameter based on prediction data. The prediction data may be determined using the prediction model. The prediction model may have been calibrated with calibration data. The prediction uncertainty parameter may be associated with variation in the prediction data. Reducing the uncertainty in the prediction model may include selecting a subset of process data based on the prediction uncertainty parameter; and recalibrating the prediction model using the calibration data and the selected subset of the process data.
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公开(公告)号：WO2019233711A1
公开(公告)日：2019-12-12
申请号：PCT/EP2019/062271
申请日：2019-05-14
Applicant: ASML NETHERLANDS B.V.
Inventor： WANG, Jen-Shiang , ZHAO, Qian , GUO, Yunbo , LU, Yen-Wen , FENG, Mu , ZHANG, Qiang
IPC: G03F7/20
Abstract: A method for improving a process model for a patterning process includes obtaining a) a measured contour (330) from an image capture device, and b) a simulated contour (510) generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.
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公开(公告)号：WO2023036593A1
公开(公告)日：2023-03-16
申请号：PCT/EP2022/073343
申请日：2022-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： GUO, Yunbo , WANG, Zhu , YANG, Feng , ZHAO, Qian , FENG, Mu , WANG, Jen-Shiang
Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.
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Patent Agency Ranking
公开(公告)号：WO2022037875A1
公开(公告)日：2022-02-24
申请号：PCT/EP2021/070206
申请日：2021-07-20
Applicant: ASML NETHERLANDS B.V.
Inventor： HUANG, Jiao , WANG, Jinze , SHI, Hongfei , FENG, Mu , ZHAO, Qian , WANG, Alvin, Jianjiang , XIAO, Yan-Jun , LIU, Liang
Abstract: Described herein is a method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with gauges or contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.
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公开(公告)号：WO2018153884A1
公开(公告)日：2018-08-30
申请号：PCT/EP2018/054212
申请日：2018-02-21
Applicant: ASML NETHERLANDS B.V.
Inventor： FAN, Yongfa , ZHENG, Leiwu , FENG, Mu , ZHAO, Qian , WANG, Jen-Shiang
IPC: G03F7/20
Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.
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公开(公告)号：WO2018224349A1
公开(公告)日：2018-12-13
申请号：PCT/EP2018/063948
申请日：2018-05-28
Applicant: ASML NETHERLANDS B.V.
Inventor： WANG, Te-Sheng , ZHAO, Qian
IPC: G03F7/20
Abstract: A method involving obtaining a simulation (710) of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point (740) on the simulated contour (710) of the pattern, the location spatially associated with a location of a corresponding evaluation point (730) on a design layout (700) for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point (740) on the simulated contour (710) and the location of the corresponding evaluation point (730) on the design layout (700), wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point (760) on a measured image (720) of at least part of the pattern, the evaluation point (760) on the measured image (720) spatially associated with the corresponding evaluation point (730) on the design layout (700).
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公开(公告)号：WO2018033363A1
公开(公告)日：2018-02-22
申请号：PCT/EP2017/069068
申请日：2017-07-27
Applicant: ASML NETHERLANDS B.V.
Inventor： FAN, Yongfa , FENG, Mu , ZHENG, Leiwu , ZHAO, Qian , WANG, Jen-Shiang
IPC: G03F7/20
CPC classification number: G03F7/70616 , G03F7/70425 , G03F7/70433 , G03F7/705
Abstract: Provided is a process to model post-exposure effects in patterning processes, the process including: obtaining, with one or more processors, values based on measurements of structures formed on one or more substrates by a post-exposure process and values of a first pair of process parameters by which process conditions were varied; modeling, with one or more processors, as a surface, correlation between the values based on measurements of the structures and the values of the first pair of process parameters; and storing, with one or more processors, the model in memory.
Abstract translation: 提供了一种在构图过程中对后曝光效果进行建模的过程，该过程包括：利用一个或多个处理器获得基于对由一个或多个基板形成的结构的测量值的值， 暴露过程和第一对过程参数的值，通过该过程参数改变过程条件; 使用一个或多个处理器作为表面，建模基于结构的测量值和第一对处理参数的值之间的相关性; 并用一个或多个处理器将模型存储在内存中。
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公开(公告)号：WO2020173687A1
公开(公告)日：2020-09-03
申请号：PCT/EP2020/053204
申请日：2020-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： WANG, Lei , FENG, Mu , ZHAO, Qian
IPC: G03F7/20 , H01L21/027
Abstract: Described herein are methods (900) for gauge selection. A method for gauge selection may be used in calibrating a process model associated with a patterning process. The method (900) includes, at (P902), obtaining a set of input gauges (902) having one or more properties (e.g., gauge name, weight, dose, focus, model error, etc.) associated with the patterning process, at (P904), selecting a subset of initial gauges (904) from the set of input gauges (902) the selecting the subset of initial gauges comprises: determining a first subset of gauges from the set of input gauges based on a first property parameter of the one or more properties, the first subset of gauges being configured to calibrate a process model (e.g., optics model, resist mode., etc.).
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