Abstract:
A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.
Abstract:
Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.
Abstract:
Systems, methods, and programming are described herein for pre-scan feature determination. In one embodiment, image data representing a plurality of scanning electron microscope ("SEM") images may be obtained, each including a representation of a feature and each being associated with a respective scan of the feature by an SEM. For each image, a parameter associated with each of a plurality of gauge positions may be determined. A change in the parameter from each SEM image to a subsequent SEM image may be determined. For each gauge position, a rate of change for the parameter may be determined based on a difference in a location of the parameter between at least two of the plurality of SEM images. Feature data representing a reconstruction of the feature prior to the SEM being applied may be generated by extrapolating an original location of the parameter based on the parameter's rate of change.
Abstract:
A method including obtaining a plurality of gauges of a plurality of gauge patterns for a patterning process, each gauge pattern configured for measurement of a parameter of the patterning process when created as part of the patterning process, and creating a selection of one or more gauges from the plurality of gauges, wherein a gauge is included in the selection provided the gauge and all the other gauges, if any, of the same gauge pattern, or all of the one or more gauges of the same gauge pattern linked to the gauge, pass a gauge printability check.
Abstract:
A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.