公开(公告)号：WO2017102336A1

公开(公告)日：2017-06-22

申请号：PCT/EP2016/079336

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Jun ,  WALLOW, Thomas I. ,  LAENENS, Bart ,  PENG, Yi-Hsing

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including obtaining a plurality of gauges of a plurality of gauge patterns for a patterning process, each gauge pattern configured for measurement of a parameter of the patterning process when created as part of the patterning process, and creating a selection of one or more gauges from the plurality of gauges, wherein a gauge is included in the selection provided the gauge and all the other gauges, if any, of the same gauge pattern, or all of the one or more gauges of the same gauge pattern linked to the gauge, pass a gauge printability check.

Abstract translation: 一种方法，包括：获得用于图案化过程的多个规格图案的多个规格，每个规格图案被配置用于当作为图案化过程的一部分而被创建时测量该图案化过程的参数;以及 从所述多个计量器中创建一个或多个计量器的选择，其中如果存在所述计量器和所有其他计量器（如果有的话）的相同计量器模式或所有所述一个或多个计量器 与量规相连的相同量规图案，通过量规印刷适性检查。

公开(公告)号：WO2021032448A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/071742

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHENG, Yunan ,  FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  WANG, Jen-Shiang ,  LUO, Ya ,  ZHANG, Chenji ,  CHEN, Jun ,  HOU, Zhenyu ,  WANG, Jinze ,  CHEN, Feng ,  MA, Ziyang ,  GUO, Xin ,  CHENG, Jin

IPC: G03F7/20

Abstract: Described herein are method generating modified simulated contours and/or generate metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.

公开(公告)号：WO2020035272A1

公开(公告)日：2020-02-20

申请号：PCT/EP2019/069858

申请日：2019-07-24

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Jun

IPC: G03F7/20 ,  H01L21/66

Abstract: Described herein is a method (800) for calibrating a process model of a patterning process. The method includes identifying (P84) a portion of the substrate that has values within a tolerance band of one or more parameters (e.g., CD, ERE, etc.) of the patterning process, obtaining (P86), via a metrology tool, metrology data (801) corresponding to the portion of the substrate, processing (P88) the metrology data, and calibrating (P89) a process model based on the processed metrology data.