Abstract:
A patterning device support (1100) for controlling a temperature of a patterning device (1102) can include a movable component (1104). The movable component can include a gas inlet (1108) for supplying a gas flow across a surface of the patterning device and a gas outlet (1110) for extracting the gas flow. The patterning device support can also include a gas flow generator (1118) coupled to a duct (1114, 1116) for recirculating the gas flow from the gas outlet to the gas inlet.
Abstract:
A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.
Abstract:
Systems and methods are disclosed for controlling the heating of a reticle. In one embodiment, a plurality of radiation sources generates a plurality of radiation beams (206) and delivers them to a patterning device (210) that absorbs a portion of the radiation from the beams and develops a spatially dependent heating profile. In a further embodiment, a plurality of resistive heating sources (906) generates heat in response to an applied voltage or current. The generated heat is absorbed by the patterning device from the resistive heating sources and leads to the development of a spatially dependent heating profile. Thermal stresses, strains, and deformations can be controlled by controlling the spatially dependent heating profile.
Abstract:
A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.
Abstract:
Methods and systems are described for cleaning contamination from the surface of an object within a lithographic apparatus. A lithographic apparatus is provided that includes an illumination system configured to condition a radiation beam, a support constructed to hold a patterning device (302), the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further includes a cleaning system (500) for cleaning particles off of a surface of either the support or the patterning device. The cleaning system includes a cleaning surface (502) designed to contact the surface of either the support or the patterning device.
Abstract:
An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates a surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing. The spurious signal is diminished for at least a portion of the continuous spectral range.
Abstract:
An apparatus, system, and method cool a patterning device by supplying a non-uniform gas flow. The apparatus and system include a gas supply structure that supplies a gas flow across the first surface of the patterning device. The gas supply structure includes a gas supply nozzle specially configured to create a non-uniform gas flow distribution. A greater volume or velocity of the gas flow is directed to desired portion of the patterning device.
Abstract:
A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.
Abstract:
A lithographic apparatus including an optical column to project a beam on a target portion of a substrate is disclosed, the optical column having a projection system configured to project the beam onto the target portion. The apparatus further includes an actuator to move the optical column or at least part thereof with respect to the substrate and a window (940) between the moving part of the optical column and the target portion of the substrate and/or between the moving part of the optical column and a non -moving part of the optical column, the window constructed and arranged within the apparatus to reduce or minimize movement of the window.
Abstract:
A target structure (402) such as an alignment mark on a semiconductor substrate (400) becomes obscured by an opaque layer (408) so that it cannot be located by an alignment sensor (AS). A position for the mark is determined using an edge position sensor (412) and relative position information that defines the position of the mark relative to one or more edge portions of the substrate is stored prior to formation of the opaque layer. A window (410) can be opened in the opaque layer, based on the determined position. After revealing the target structure, the alignment sensor can if desired measure more accurately the position of the target structure, for use in controlling further lithographic steps. The edge position sensor may be a camera having an angle-selective behaviour. The edge position sensor may be integrated within the alignment sensor hardware.