公开(公告)号：WO2022016128A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/042108

申请日：2021-07-16

Applicant: LAM RESEARCH CORPORATION

Inventor： HANSEN, Eric Calvin ,  WEIDMAN, Timothy William ,  WU, Chenghao ,  LIN, Qinghuang ,  BLAKENEY, Kyle Jordan ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  TAN, Samantha S.H. ,  WISE, Richard ,  PAN, Yang ,  LEE, Younghee ,  NARDI, Katie Lynn ,  GU, Kevin Li ,  VOLOSSKIY, Boris

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027 ,  H01L21/67

Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.

公开(公告)号：WO2022010809A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040381

申请日：2021-07-02

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha S.H. ,  ALVI, Mohammed Haroon ,  WISE, Richard ,  PAN, Yang ,  GOTTSCHO, Richard A. ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  WEIDMAN, Timothy William ,  LIN, Qinghuang ,  HUBACEK, Jerome

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67 ,  C23C16/00 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/168 ,  H01L21/67167 ,  H01L21/67207

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：WO2019089196A1

公开(公告)日：2019-05-09

申请号：PCT/US2018/055065

申请日：2018-10-09

Applicant: LAM RESEARCH CORPORATION

Inventor： SMITH, David Charles ,  WISE, Richard ,  MAHOROWALA, Arpan ,  HAUSMANN, Dennis M.

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  G03F7/20 ,  G03F1/80

Abstract: Methods of and apparatuses for processing a metal oxide film are provided. Methods involve (a) exposing the metal oxide film to a boron halide reactant and igniting a first plasma with a first bias power to modify a surface of the metal oxide film, and (b) exposing the modified surface of the metal oxide film to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering. Methods also involve (c) selectively depositing a metal oxide material on the metal oxide film to fill crevices within the metal oxide film.

公开(公告)号：WO2019152362A1

公开(公告)日：2019-08-08

申请号：PCT/US2019/015559

申请日：2019-01-29

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha SiamHwa ,  HEO, Seongjun ,  VOLOSSKIY, Boris ,  KANAKASABAPATHY, Sivananda Krishnan ,  WISE, Richard ,  PAN, Yang ,  WU, Hui-Jung

IPC: H01L21/3213 ,  H01L21/768 ,  H01L21/02 ,  H01L21/67

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

公开(公告)号：WO2018204193A1

公开(公告)日：2018-11-08

申请号：PCT/US2018/029874

申请日：2018-04-27

Applicant: LAM RESEARCH CORPORATION

Inventor： TETIKER, Mehmet Derya ,  SRIRAMAN, Saravanapriyan ,  BAILEY, Andrew D. III ,  WISE, Richard

IPC: G03F7/20 ,  G03F1/72

Abstract: Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

公开(公告)号：WO2019182872A1

公开(公告)日：2019-09-26

申请号：PCT/US2019/022319

申请日：2019-03-14

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda K. ,  WU, Hui-Jung ,  WISE, Richard ,  MAHOROWALA, Arpan

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/311

Abstract: Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing conformal removable sealant layers and hard masks in one operation using same etching chemistries.

公开(公告)号：WO2018213318A1

公开(公告)日：2018-11-22

申请号：PCT/US2018/032783

申请日：2018-05-15

Applicant: LAM RESEARCH CORPORATION

Inventor： SHAMMA, Nader ,  WISE, Richard ,  YU, Jengyi ,  TAN, Samantha

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/033 ,  H01L21/02

Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.

公开(公告)号：WO2018152115A1

公开(公告)日：2018-08-23

申请号：PCT/US2018/018019

申请日：2018-02-13

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha ,  JIANG, Yu ,  WU, Hui-Jung ,  WISE, Richard ,  PAN, Yang ,  SHAMMA, Nader ,  VOLOSSKIY, Boris

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027 ,  H01L21/67

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.