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11 条记录 (耗时 0.016 秒)

    NONVOLATILE MEMORY DEVICE
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件

    公开(公告)号：WO2004015778A1

    公开(公告)日：2004-02-19

    申请号：PCT/JP2003/010017

    申请日：2003-08-06

    申请人： CANON KABUSHIKI KAISHA ,  HIRAI, Tadahiko ,  SATO, Naotake

    发明人： HIRAI, Tadahiko ,  SATO, Naotake

    IPC分类号： H01L27/10

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/34 ,  G11C17/14 ,  H01L27/101 ,  H01L27/28

    摘要： The invention provides a nonvolatile memory device that enables formation of integrated circuits on a substrate such as glass and resin substrates and selection of a desired cell, where the nonvolatile memory device comprises a matrix wiring, a switching element, and a memory element, wherein the memory has a changeable impedance, and both the switching element and the memory element comprises an organic semiconductor or an organic electric conductor or both.

    摘要翻译： 本发明提供了一种非易失性存储器件，其能够在诸如玻璃和树脂基板的基板上形成集成电路，并且选择期望的单元，其中非易失性存储器件包括矩阵布线，开关元件和存储元件，其中， 存储器具有可变阻抗，并且开关元件和存储元件都包括有机半导体或有机电导体或两者。

    ORGANIC SEMICONDUCTOR DEVICE, RF MODULATION CIRCUIT, AND IC CARD
    3.
    发明申请
    ORGANIC SEMICONDUCTOR DEVICE, RF MODULATION CIRCUIT, AND IC CARD 审中-公开
    有机半导体器件，RF调制电路和IC卡

    公开(公告)号：WO2003092085A1

    公开(公告)日：2003-11-06

    申请号：PCT/JP2003/005278

    申请日：2003-04-24

    申请人： CANON KABUSHIKI KAISHA ,  HIRAI, Tadahiko

    发明人： HIRAI, Tadahiko

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0504 ,  H01L27/28

    摘要： A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the pair of electrodes. Consequently, there is provided an organic semiconductor device having a simple configuration.

    摘要翻译： 提供一对电极以夹持有机半导体层。 在有机半导体层和构成该对电极的两个电极中的每一个上设置引出电极。 因此，提供了一种具有简单结构的有机半导体器件。

    NONVOLATILE MEMORY DEVICE
    4.
    发明申请
    NONVOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件

    公开(公告)号：WO2005060001A1

    公开(公告)日：2005-06-30

    申请号：PCT/JP2004/018522

    申请日：2004-12-06

    申请人： CANON KABUSHIKI KAISHA ,  SUMIDA, Takayuki ,  HIRAI, Tadahiko

    发明人： SUMIDA, Takayuki ,  HIRAI, Tadahiko

    IPC分类号： H01L27/10

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G06K19/0723 ,  H01L21/84 ,  H01L27/101 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/12 ,  H01L27/28

    摘要： Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are arranged on a substrate having an insulating surface, wherein the switching element includes an organic semiconductor, and the storage element contains a dielectric material and stores information by selecting at least two states including a high impedance state and a low impedance state.

    摘要翻译： 提供一种非易失性存储装置，包括：存储元件; 电连接到所述存储元件的开关元件; 以及电连接到所述开关元件的多个引线配线，其全部布置在具有绝缘表面的基板上，其中所述开关元件包括有机半导体，并且所述存储元件包含电介质材料并且通过至少选择来存储信息 两个状态包括高阻抗状态和低阻抗状态。

    ACTIVE-MATRIX DISPLAY AND DRIVE METHOD THEREOF
    6.
    发明申请
    ACTIVE-MATRIX DISPLAY AND DRIVE METHOD THEREOF 审中-公开
    主动矩阵显示及其驱动方法

    公开(公告)号：WO2008149736A1

    公开(公告)日：2008-12-11

    申请号：PCT/JP2008/059761

    申请日：2008-05-21

    申请人： CANON KABUSHIKI KAISHA ,  HIRAI, Tadahiko ,  SUMIOKA, Jun ,  OKAMOTO, Kaoru

    发明人： HIRAI, Tadahiko ,  SUMIOKA, Jun ,  OKAMOTO, Kaoru

    IPC分类号： G09G3/30 ,  G09G3/20 ,  H01L51/50

    CPC分类号： G09G3/325 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/0285 ,  G09G2320/0295

    摘要： An active-matrix display includes a data line, at least one select line, a control unit supplying a voltage signal and a current signal to the data line, and a pixel circuit receiving the voltage signal and the current signal from the data line to drive a light emitting element, the control unit including a voltage or first current source supplying a voltage or current pulse to the data line in order to make the voltage holding unit hold the voltage signal for making the light emitting element emit light having predetermined brightness in a first selection period in which the first switch is closed, a second current source supplying the current signal for making the light emitting element emit light having the predetermined brightness to the data line in a second selection period in which the first switch and the second switch are closed, a detection circuit detecting potential held in the voltage holding unit in the second selection period, and a correction unit correcting the voltage signal based on a relationship between the current signal and the detected potential.

    摘要翻译： 有源矩阵显示器包括数据线，至少一个选择线，向数据线提供电压信号和电流信号的控制单元，以及从数据线接收电压信号和电流信号以驱动的像素电路 发光元件，所述控制单元包括向所述数据线提供电压或电流脉冲的电压或第一电流源，以使所述电压保持单元保持所述电压信号，以使所述发光元件在所述发光元件中发射具有预定亮度的光 第一开关闭合的第一选择期间，在第一开关和第二开关为止的第二选择期间，向第一开关供给用于使发光元件发光的电流信号的第二电流源向数据线发射 关闭在第二选择期间保持在电压保持单元中的检测电路的检测电路和校正电压的校正单元 基于当前信号与检测电位之间的关系的信号。

    SEMICONDUCTOR INTEGRATED CIRCUIT, OPERATING METHOD THEREOF, AND IC CARD INCLUDING THE CIRCUIT
    7.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT, OPERATING METHOD THEREOF, AND IC CARD INCLUDING THE CIRCUIT 审中-公开
    半导体集成电路，其操作方法和包含电路的IC卡

    公开(公告)号：WO2005060002A1

    公开(公告)日：2005-06-30

    申请号：PCT/JP2004/018545

    申请日：2004-12-07

    申请人： CANON KABUSHIKI KAISHA ,  HIRAI, Tadahiko ,  SAWADA, Kikuzo

    发明人： HIRAI, Tadahiko ,  SAWADA, Kikuzo

    IPC分类号： H01L27/10

    CPC分类号： G11C13/003 ,  B82Y10/00 ,  G11C13/0014 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/34 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/283

    摘要： One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memory element is connected with a base line. A fixed resistor is connected between a connecting point between the other main electrode of the TFT and the bit line and an input terminal of the bit line. In information writing for changing the memory element whose initial state is a low impedance state to a high impedance state, voltages having polarities reverse relative to a reference voltage are applied to the input terminal of the bit line and an input terminal of the base line, respectively, so that a high voltage necessary to change the state is applied between both the terminals of the memory element.

    摘要翻译： TFT的一个主电极与两端型非易失性存储元件的一个端子连接，TFT的栅电极与字线连接，而另一个主电极与位线连接。 存储元件的另一个端子与基线连接。 在TFT的另一个主电极和位线之间的连接点和位线的输入端子之间连接有固定电阻器。 在将初始状态为低阻抗状态的存储元件改变为高阻抗状态的信息写入中，具有相对于参考电压相反极性的电压被施加到位线的输入端和基线的输入端， 从而在存储元件的两个端子之间施加改变状态所需的高电压。

    UNAUTHORIZED ACCESS PREVENTION METHOD
    8.
    发明申请
    UNAUTHORIZED ACCESS PREVENTION METHOD 审中-公开
    未经授权的访问预防方法

    公开(公告)号：WO2004088581A1

    公开(公告)日：2004-10-14

    申请号：PCT/JP2004/004341

    申请日：2004-03-26

    申请人： CANON KABUSHIKI KAISHA ,  HIRAI, Tadahiko

    发明人： HIRAI, Tadahiko

    IPC分类号： G06K19/073

    CPC分类号： G06K19/07363 ,  G06K19/073

    摘要： An unauthorized access prevention method is provided for an integrated circuit including one or plural resistor elements capable of selecting between a high impedance state and a low impedance state irreversibly in an interface portion within the integrated circuit or a peripheral circuit portion. When a signal inconsistent with verification information and standard that are preset in the integrated circuit is received at least once, the impedance state of the resistor element is changed from an initial state to stop a part or all of accesses to the integrated circuit irreversibly. The unauthorized access prevention method is thus implemented by a simple structure manufactured with ease and at low cost.

    摘要翻译： 提供了一种用于集成电路的未经授权的访问防止方法，该集成电路包括能够在集成电路或外围电路部分中的接口部分中不可逆地在高阻抗状态和低阻抗状态之间选择的一个或多个电阻器元件。 当与集成电路中预设的验证信息和标准不一致的信号至少接收一次时，电阻元件的阻抗状态从初始状态改变，以不可逆地停止对集成电路的部分或全部访问。 因此，通过以简单且低成本制造的简单结构来实现未授权的访问防止方法。