摘要:
A method includes forming a closed contour line having a plurality of defects in a transparent workpiece such that the closed contour line defines a closed contour. A pulsed laser beam is directed through an aspheric optical element and into the transparent workpiece such that a portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, the induced absorption producing a defect within the transparent workpiece, and translating the transparent workpiece and the pulsed laser beam relative to each other along the closed contour line. The method further includes etching the transparent workpiece with a chemical etching solution at an etching rate of about 2.5 µm/min or less to separate a portion of the transparent workpiece along the closed contour line, thereby forming an aperture extending through the transparent workpiece, the aperture comprising an aperture perimeter extending along the closed contour.
摘要:
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
摘要:
A device includes a sheet of high purity fused silica that has a thickness of less than 500 µm, where the sheet includes features in the sheet, wherein the features have a cross-sectional dimension of less than 50 µm and a depth of at least 100 nm, wherein the features are spaced apart from one another by a distance of less than 50 µm, and wherein the silica is free of indicia of grinding and polishing.
摘要翻译:装置包括厚度小于500μm的高纯度熔凝硅石片材,其中片材包括片材中的特征,其中特征具有小于500μm的横截面尺寸 大于50微米且深度至少为100纳米,其中特征彼此间隔小于50微米的距离,并且其中二氧化硅不含研磨和抛光标记。 p >
摘要:
In some embodiments, a method comprises forming a pilot hole or damage track through a laminate glass structure using a laser. The laminate glass structure comprising a first layer and a second layer adjacent to the first layer. The first layer is formed from a first glass composition. The second layer is formed from a second glass composition different from the first glass composition. After forming the pilot hole, the laminate glass structure is exposed to etching conditions that etch the first glass composition at a first etching rate and the second glass composition at a second etching rate, wherein the first etch rate is different from the second etch rate, to form an etched hole.
摘要:
The described embodiments relate generally to a micro-perforated panel systems and methods for noise abatement and method of making a micro-perforated panel system. In particular, embodiments relate to glass micro-perforated panel systems and methods for their construction.
摘要:
A device includes a sheet of high purity fused silica that has a thickness of less than 500 µm, where the sheet includes features in the sheet, wherein the features have a cross-sectional dimension of less than 50 µm and a depth of at least 100 nm, wherein the features are spaced apart from one another by a distance of less than 50 µm, and wherein the silica is free of indicia of grinding and polishing.
摘要:
A method of forming a glass substrate includes providing a glass substrate having alumina, translating a pulsed laser beam on the glass substrate to form one or more pilot holes, contacting the glass substrate with an etching solution, and providing agitation. The etching solution has a pH from about 0 to about 2.0, and an etch rate is less than about 3 µm/min. A glass substrate is disclosed having a first surface and a second surface opposite the first surface in a thickness direction, and at least one hole penetrating the first surface, wherein the at least one hole has been etched by an etching solution. A greatest distance d1 between (1) a first plane that contacts the first surface in regions that do not have the at least one hole or a deviation in a thickness of the substrate surrounding the at least one hole and (2) a surface of the deviation recessed from the first plane is less than or equal to about 0.2 µm.