INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER
    2.
    发明申请
    INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER 审中-公开
    无机晶圆具有附着于半导体晶圆的通孔

    公开(公告)号:WO2018005401A1

    公开(公告)日:2018-01-04

    申请号:PCT/US2017/039357

    申请日:2017-06-27

    摘要: A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

    摘要翻译: 一种工艺包括将半导体晶片结合到无机晶片。 半导体晶片对于无机晶片透明的光的波长是不透明的。 在键合之后,使用发射光波长的激光器在无机晶片中形成损伤轨迹。 无机晶圆中的损伤轨迹被扩大以通过蚀刻形成穿过无机晶圆的孔。 该孔终止于半导体晶片和无机晶片之间的界面。 还提供了一种物品,其包括结合到无机晶圆的半导体晶圆。 半导体晶片对于无机晶片透明的光的波长是不透明的。 无机晶片具有穿过无机晶片形成的孔。 该孔终止于半导体晶片和无机晶片之间的界面。

    METHODS OF ETCHING GLASS SUBSTRATES AND GLASS SUBSTRATES
    7.
    发明申请
    METHODS OF ETCHING GLASS SUBSTRATES AND GLASS SUBSTRATES 审中-公开
    蚀刻玻璃基板和玻璃基板的方法

    公开(公告)号:WO2016201027A2

    公开(公告)日:2016-12-15

    申请号:PCT/US2016/036566

    申请日:2016-06-09

    IPC分类号: C03C15/00

    摘要: A method of forming a glass substrate includes providing a glass substrate having alumina, translating a pulsed laser beam on the glass substrate to form one or more pilot holes, contacting the glass substrate with an etching solution, and providing agitation. The etching solution has a pH from about 0 to about 2.0, and an etch rate is less than about 3 µm/min. A glass substrate is disclosed having a first surface and a second surface opposite the first surface in a thickness direction, and at least one hole penetrating the first surface, wherein the at least one hole has been etched by an etching solution. A greatest distance d1 between (1) a first plane that contacts the first surface in regions that do not have the at least one hole or a deviation in a thickness of the substrate surrounding the at least one hole and (2) a surface of the deviation recessed from the first plane is less than or equal to about 0.2 µm.

    摘要翻译: 形成玻璃基板的方法包括提供具有氧化铝的玻璃基板,将脉冲激光束平移在玻璃基板上以形成一个或多个引导孔,使玻璃基板与蚀刻溶液接触并提供搅拌。 蚀刻溶液具有约0至约2.0的pH,蚀刻速率小于约3μm/ min。 公开了一种玻璃基板,其具有在厚度方向上与第一表面相对的第一表面和第二表面,以及穿过第一表面的至少一个孔,其中至少一个孔已经被蚀刻溶液蚀刻。 (1)在不具有至少一个孔的区域中接触第一表面的第一平面或围绕至少一个孔的基底的厚度偏差之间的最大距离d1,以及(2) 从第一平面凹陷的偏差小于或等于约0.2μm。