公开(公告)号：WO2015190749A1

公开(公告)日：2015-12-17

申请号：PCT/KR2015/005610

申请日：2015-06-04

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  JEON, Sang Yong ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/513

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/45557

Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si-N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si-N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物和使用其的含有Si-N键的电介质膜的制造方法。 由于作为热稳定性高挥发性化合物的本发明的氨基甲硅烷基胺化合物可以在室温下进行处理，并且在室温和高压下用作液态化合物，本发明提供了一种制备方法 通过使用原子层沉积（PEALD）即使在低温和等离子体条件下也含有Si-N键的高纯度介电膜。

公开(公告)号：WO2021034014A1

公开(公告)日：2021-02-25

申请号：PCT/KR2020/010771

申请日：2020-08-13

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  KIM, Sung Gi ,  PARK, Jeong Joo ,  BYUN, Tae Seok ,  KWONE, Yong Hee ,  KIM, Yeong Hun ,  LIM, Haengdon ,  JEON, Sang Yong ,  LEE, Sang Ick

IPC: C07F7/21 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

公开(公告)号：WO2011078446A1

公开(公告)日：2011-06-30

申请号：PCT/KR2010/003245

申请日：2010-05-24

Applicant: DNF CO., LTD. ,  PARK, Jeong Hyeon ,  BYUN, Tae Seok ,  JEON, Sang Yong ,  SON, Seung ,  KWONE, Yong Hee ,  CHO, Yik-haeng ,  KIM, Jin Dong ,  KIM, Myong-Woon

Inventor： PARK, Jeong Hyeon ,  BYUN, Tae Seok ,  JEON, Sang Yong ,  SON, Seung ,  KWONE, Yong Hee ,  CHO, Yik-haeng ,  KIM, Jin Dong ,  KIM, Myong-Woon

IPC: C09K13/00

CPC classification number: H01L21/02087 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/3125

Abstract: Provided are a polysilazane treating solvent including one or more compound(s) selected from toluene and heptane and a (Cl2-C16)isoparaffin mixture, and a method for treating polysilazane using the same. More specifically, provided are a polysilazane treating solvent capable of chemically removing unwanted polysilazane coat film formed on a substrate, which may result in a severe problem in the semiconductor process if let alone, and a method for treating polysilazane using the same.

Abstract translation: 提供了包含一种或多种选自甲苯和庚烷的化合物和（Cl 2 -C 16）异链烷烃混合物的聚硅氮烷处理溶剂，以及使用其的聚硅氮烷的处理方法。 更具体地，提供了能够化学去除在基材上形成的不需要的聚硅氮烷涂层的聚硅氮烷处理溶剂，如果不用，则可能导致半导体工艺中的严重问题，以及使用其的处理聚硅氮烷的方法。