公开(公告)号：WO2018098202A1

公开(公告)日：2018-05-31

申请号：PCT/US2017/062900

申请日：2017-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： CHATTERJEE, Sukti ,  SCUDDER, Lance A. ,  LIU, Eric H. ,  NARWANKAR, Pravin K. ,  MANNA, Pramit ,  MALLICK, Abhijit

IPC: H01L21/02 ,  H01L21/324

CPC classification number: C23C16/448 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.

公开(公告)号：WO2017160647A1

公开(公告)日：2017-09-21

申请号：PCT/US2017/021852

申请日：2017-03-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Ning ,  BALSEANU, Mihaela ,  XIA, Li-Qun

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31111

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

Abstract translation: 用于形成间隔物的方法包括在特征的顶部，底部和侧壁上沉积膜，并处理该膜以改变该特征的顶部和底部上的膜的性质，使得膜 可以从特征的顶部和底部相对于特征侧壁上的膜选择性地蚀刻。

公开(公告)号：WO2017115147A3

公开(公告)日：2017-08-10

申请号：PCT/IB2016001962

申请日：2016-12-16

Applicant: AIR LIQUIDE

Inventor： GIRARD JEAN-MARC ,  KO CHANGHEE ,  OSHCHEPKOV IVAN ,  YANAGITA KAZUTAKA ,  OKUBO SHINGO ,  NODA NAOTO ,  GATINEAU JULIEN

IPC: H01L21/316 ,  C23C16/455 ,  H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

Abstract: Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract translation: 公开了通过使用五取代乙硅烷如五卤代乙硅烷或五（二甲基氨基）乙硅烷的气相沉积工艺在衬底上沉积含硅膜的方法。

公开(公告)号：WO2017115147A2

公开(公告)日：2017-07-06

申请号：PCT/IB2016/001962

申请日：2016-12-16

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE

Inventor： GIRARD, Jean-Marc ,  KO, Changhee ,  OSHCHEPKOV, Ivan ,  YANAGITA, Kazutaka ,  OKUBO, Shingo ,  NODA, Naoto ,  GATINEAU, Julien

IPC: H01L21/316

CPC classification number: H01L21/0228 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

Abstract: Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract translation: 公开了使用五取代乙硅烷如五卤代乙硅烷或五（二甲基氨基）乙硅烷通过气相沉积法在基材上沉积含硅膜的方法。

公开(公告)号：WO2017112352A1

公开(公告)日：2017-06-29

申请号：PCT/US2016/063840

申请日：2016-11-28

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： CHEN, Tsung-Liang ,  HAUTALA, John ,  LIANG, Shurong ,  OLSON, Joseph

IPC: H01J37/32 ,  C23C16/455

CPC classification number: C23C14/54 ,  C23C14/221 ,  C23C14/48 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/02274

Abstract: Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (POU) gas to an area proximate a substrate disposed within the deposition chamber. Exemplary approaches further include generating an ion beam for delivery to the substrate, and modifying a pressure within the deposition chamber in the area proximate the substrate to increase an amount of reactive ions present for impacting the substrate when the ion beam is delivered to the substrate.

Abstract translation: 本文的方法增加等离子体处理设备中反应离子与中性物种的比率。 示例性方法包括提供具有等离子体源室的处理设备，该等离子体源室包括第一气体入口和耦合到等离子体源室的沉积室，其中该沉积室包括第二气体入口，用于将使用点（POU）气体输送到 区域靠近设置在沉积室内的衬底。 示例性方法进一步包括生成用于递送到衬底的离子束并且修改靠近衬底的区域中的沉积室内的压力以增加当离子束被递送到衬底时用于冲击衬底的反应离子的量。

公开(公告)号：WO2017034855A1

公开(公告)日：2017-03-02

申请号：PCT/US2016/047150

申请日：2016-08-16

Applicant: APPLIED MATERIALS, INC.

Inventor： LU, Xinliang ,  LEI, Pingyan ,  KAO, Chien-Teh ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  SRIRAM, Mandyam

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/285 ,  H01L21/205

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4584 ,  H01L21/02211 ,  H01L21/0228

Abstract: Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600°C and a nitrogen-containing reactant.

Abstract translation: 用于沉积SiN膜的方法包括在大于或等于约600℃的温度下将衬底表面顺序暴露于卤化硅前体和含氮反应物的方法。

公开(公告)号：WO2017024048A1

公开(公告)日：2017-02-09

申请号：PCT/US2016/045379

申请日：2016-08-03

Applicant: UHV TECHNOLOGIES, INC.

Inventor： KUMAR, Nalin ,  LEE, Geunhee

IPC: G03F1/22 ,  H01L21/027 ,  H01J35/18

CPC classification number: H01J5/18 ,  C23C16/27 ,  C23C16/345

Abstract: An x-ray window, which may be utilized within an x-ray source or an x-ray detector is disclosed, and a method for manufacturing the same. The x-ray window may be permeable to soft x-rays. The x-ray window may have at least one surface in contact with a pressure essentially equal that of a vacuum. The x-ray window may be multilayered with a thickness of less than or equal to one micron.

Abstract translation: 公开了可以在x射线源或X射线检测器内使用的X射线窗口及其制造方法。 x射线窗口可能是透过软X射线。 X射线窗可以具有与基本上等于真空的压力接触的至少一个表面。 x射线窗口可以是多层厚度小于或等于1微米。

公开(公告)号：WO2016201320A1

公开(公告)日：2016-12-15

申请号：PCT/US2016/037013

申请日：2016-06-10

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AIR LIQUIDE ADVANCED MATERIALS, LLC ,  GIRARD, Jean-Marc ,  ZHANG, Peng ,  SANCHEZ, Antonio ,  KHANDELWAL, Manish ,  ITOV, Gennadiy ,  PESARESI, Reno

Inventor： GIRARD, Jean-Marc ,  ZHANG, Peng ,  SANCHEZ, Antonio ,  KHANDELWAL, Manish ,  ITOV, Gennadiy ,  PESARESI, Reno

IPC: C07F7/02 ,  C01B21/088 ,  C01B21/087 ,  C23C16/50 ,  C23C16/455

CPC classification number: C07F7/025 ,  C01B21/087 ,  C01B21/088 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/515

Abstract: ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH3)2N-SiH2-X, wherein X is a halogen atom or an amino group.

Abstract translation: 公开了使用单取代的TSA前体形成硅和含氧膜的ALD工艺。 单取代的TSA前体具有下式：（SiH 3）2 N-SiH 2 -X，其中X是卤素原子或氨基。

公开(公告)号：WO2016160991A1

公开(公告)日：2016-10-06

申请号：PCT/US2016/025011

申请日：2016-03-30

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AIR LIQUIDE ADVANCED MATERIALS, LLC ,  KERRIGAN, Sean ,  SANCHEZ, Antonio

Inventor： KERRIGAN, Sean ,  SANCHEZ, Antonio

IPC: C07F7/10 ,  C07F7/20 ,  H01L21/205 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Si-containing film forming compositions are disclosed comprising Si-N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si-N containing precursors.

Abstract translation: 公开了含Si的成膜组合物，其包含含Si-N的前体。 还公开了其合成方法和使用该方法进行气相沉积的方法。 特别地，碳硅烷与氨，胺和脒的催化脱氢偶联产生含Si-N的前体。

公开(公告)号：WO2015190749A1

公开(公告)日：2015-12-17

申请号：PCT/KR2015/005610

申请日：2015-06-04

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  JEON, Sang Yong ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/513

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/45557

Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si-N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si-N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物和使用其的含有Si-N键的电介质膜的制造方法。 由于作为热稳定性高挥发性化合物的本发明的氨基甲硅烷基胺化合物可以在室温下进行处理，并且在室温和高压下用作液态化合物，本发明提供了一种制备方法 通过使用原子层沉积（PEALD）即使在低温和等离子体条件下也含有Si-N键的高纯度介电膜。