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    LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY
    3.
    发明申请
    LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY 审中-公开
    使用远程等离子CVD技术的低温硅氮化硅膜

    公开(公告)号：WO2015065790A1

    公开(公告)日：2015-05-07

    申请号：PCT/US2014/061822

    申请日：2014-10-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： CHATTERJEE, Amit ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K.

    IPC: H01L21/318 ,  H01L21/205

    CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45582 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274

    Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

    Abstract translation: 本发明的实施方案通常提供在衬底上形成氮化硅层的方法。 在一个实施例中，公开了在小于300摄氏度的温度下使用远程等离子体化学气相沉积（CVD）形成氮化硅层的方法。 用于远程等离子体CVD工艺的前体包括三（二甲基氨基）硅烷（TRIS），二氯硅烷（DCS），三甲基胺（TSA），双 - 叔丁基氨基硅烷（BTBAS），六氯二硅烷（HCDS）或六甲基环三硅氮烷（HMCTZ）。

    DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION
    9.
    发明申请
    DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION 审中-公开
    利用惰性气体激发形成介电膜

    公开(公告)号：WO2011084532A3

    公开(公告)日：2011-10-13

    申请号：PCT/US2010060593

    申请日：2010-12-15

    Applicant: APPLIED MATERIALS INC ,  MILLER MATTHEW L ,  YANG JANG-GYOO

    Inventor： MILLER MATTHEW L ,  YANG JANG-GYOO

    IPC: H01L21/318

    CPC classification number: H01L21/02222 ,  C23C16/045 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02326

    Abstract: Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

    Abstract translation: 描述了形成含硅和氮的层和氧化硅层的方法。 该方法包括将不含碳的含硅前体与等离子体流出物混合并在衬底上沉积含硅和氮的层的步骤。 通过选择从远程等离子体区域进入衬底处理区域的激发流出物的流速，可以使含硅和氮的层成为可流动的或共形的。 等离子体流出物通过使惰性气体流入等离子体而在等离子体中形成。 通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

    DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION
    10.
    发明申请
    DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION 审中-公开
    使用入侵气体激励的电介质膜形成

    公开(公告)号：WO2011084532A2

    公开(公告)日：2011-07-14

    申请号：PCT/US2010/060593

    申请日：2010-12-15

    Applicant: APPLIED MATERIALS, INC. ,  MILLER, Matthew L. ,  YANG, Jang-Gyoo

    Inventor： MILLER, Matthew L. ,  YANG, Jang-Gyoo

    IPC: H01L21/318

    CPC classification number: H01L21/02222 ,  C23C16/045 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02326

    Abstract: Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

    Abstract translation: 描述形成含硅和氮的层和氧化硅层的方法。 所述方法包括将无碳含硅前体与等离子体流出物混合，以及在衬底上沉积含硅和氮的层的步骤。 可以通过选择从远程等离子体区域到基板处理区域的激发流出物的流量来使含硅和氮的层可流动或共形。 等离子体流出物通过将惰性气体流入等离子体而形成在等离子体中。 通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

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