公开(公告)号：WO2018182318A1

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003682

申请日：2018-03-29

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D4/00 ,  H01L21/02 ,  H01L21/324

Abstract: Provided are a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：WO2018182309A1

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003655

申请日：2018-03-28

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D183/16 ,  C23C16/24 ,  C23C16/40 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/50 ,  C09D4/00 ,  H01L21/02

CPC classification number: C09D4/00 ,  C07F7/10 ,  C08G77/62 ,  C09D183/16 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：WO2015190749A1

公开(公告)日：2015-12-17

申请号：PCT/KR2015/005610

申请日：2015-06-04

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  JEON, Sang Yong ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/513

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/45557

Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si-N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si-N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物和使用其的含有Si-N键的电介质膜的制造方法。 由于作为热稳定性高挥发性化合物的本发明的氨基甲硅烷基胺化合物可以在室温下进行处理，并且在室温和高压下用作液态化合物，本发明提供了一种制备方法 通过使用原子层沉积（PEALD）即使在低温和等离子体条件下也含有Si-N键的高纯度介电膜。

公开(公告)号：WO2015105337A1

公开(公告)日：2015-07-16

申请号：PCT/KR2015/000168

申请日：2015-01-08

Applicant: DNF CO.,LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  KIM, Jong Hyun ,  KIM, Sung Gi ,  KIM, Do Yeon ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C23C16/18

CPC classification number: C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45542

Abstract: Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.

Abstract translation: 提供了一种新的三甲硅烷胺衍生物及其制备方法，以及使用其的含硅的薄膜，其中作为具有热稳定性，高挥发性和高反应性并且存在于液体中的化合物的三甲硅烷基胺衍生物 在室温和压力下处理可能的情况下，可以通过各种沉积方法形成具有优异的物理和电学性能的高纯度含硅薄膜。

公开(公告)号：WO2018182305A9

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003643

申请日：2018-03-28

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D4/00 ,  H01L21/02 ,  H01L21/324

Abstract: Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

公开(公告)号：WO2018182305A1

公开(公告)日：2018-10-04

申请号：PCT/KR2018/003643

申请日：2018-03-28

Applicant: DNF CO., LTD.

Inventor： KIM, Sung Gi ,  PARK, Jeong Joo ,  PARK, Joong Jin ,  JANG, Se Jin ,  YANG, Byeong-il ,  LEE, Sang-Do ,  LEE, Sam Dong ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C09D4/00 ,  H01L21/02 ,  H01L21/324

Abstract: Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

公开(公告)号：WO2015105350A1

公开(公告)日：2015-07-16

申请号：PCT/KR2015/000189

申请日：2015-01-08

Applicant: DNF CO.,LTD.

Inventor： JANG, Se Jin ,  YANG, Byeong-il ,  KIM, Sung Gi ,  KIM, Jong Hyun ,  KIM, Do Yeon ,  LEE, Sang-Do ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10

CPC classification number: C07F7/21 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Abstract translation: 提供了一种新的环二硅氮烷衍生物及其制备方法，以及使用该方法的含硅薄膜，其中，具有热稳定性，挥发性高，反应性高的环状二硅氮烷衍生物在室温下以液态存在， 在处理容易的压力下，可以通过各种沉积方法形成具有优异物理和电学性能的高纯度含硅薄膜。

公开(公告)号：WO2014196827A2

公开(公告)日：2014-12-11

申请号：PCT/KR2014/005006

申请日：2014-06-05

Applicant: DNF CO., LTD.

Inventor： JANG, Se Jin ,  LEE, Sang-Do ,  CHO, Jun Hee ,  KIM, Sung Gi ,  KIM, Jong Hyun ,  YANG, Byeong-il ,  SEOK, Jang Hyeon ,  LEE, Sang Ick ,  KIM, Myong Woon

IPC: C07F7/10 ,  C08L83/04 ,  C23C16/06

CPC classification number: C07F7/10 ,  C23C16/402

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film haying high purity and excellent physical and electrical properties by various deposition methods.

Abstract translation: 提供了一种新的氨基甲硅烷基胺化合物及其制备方法和使用该方法的含硅薄膜，其中氨基甲硅烷基胺化合物具有热稳定性和高挥发性，并保持在液态 在室温下，在容易处理的压力下，通过各种沉积方法形成具有高纯度和优异的物理和电学性质的含硅薄膜。