公开(公告)号：WO2018175089A1

公开(公告)日：2018-09-27

申请号：PCT/US2018/020594

申请日：2018-03-02

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： YI, Yang ,  SHEN, Dongna ,  WANG, Yu-jen

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  G11B5/31

Abstract: A stack of MTJ layers is provided on a substrate comprising a bottom electrode, a pinned layer, a tunnel barrier layer, a free layer, and a top electrode. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed on its sidewalls. A dielectric spacer is formed on the MTJ device. The dielectric spacer is etched away on horizontal surfaces wherein the dielectric spacer on the sidewalls is partially etched away. The remaining dielectric spacer covers the pinned layer and bottom electrode. The dielectric spacer is removed from the free layer or is thinner on the free layer than on the pinned layer and bottom electrode. Sidewall damage is thereafter removed from the free layer by applying a horizontal etching to the MTJ device wherein the pinned layer and bottom electrode are protected from etching by the dielectric spacer layer.

公开(公告)号：WO2013130195A1

公开(公告)日：2013-09-06

申请号：PCT/US2013/022877

申请日：2013-01-24

Applicant: HEADWAY TECHNOLOGIES, INC. ,  WANG, Yu-jen ,  KULA, Witold ,  TONG, Ru, Ying ,  JAN, Guenole

Inventor： WANG, Yu-jen ,  KULA, Witold ,  TONG, Ru, Ying ,  JAN, Guenole

IPC: H01L29/82

CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: Enhanced He and Hk in addition to higher thermal stability up to at least 400°C are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400°C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1o alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell for STT-MRAM designs.

Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物，通过在磁性器件中获得增强的He和Hk以及至多400℃的更高的热稳定性。 / DL2 / RL2参考层配置，其中RL1和RL2层呈现垂直磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 除尘层在室温至400℃下沉积。 RL1和RL2层选自诸如（Ni / Co）n，L1o合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并且增加用于STT-MRAM设计的存储器单元的保留时间。

公开(公告)号：WO2014085188A1

公开(公告)日：2014-06-05

申请号：PCT/US2013/071227

申请日：2013-11-21

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： WANG, Yu-jen ,  JAN, Guenole ,  TONG, Ru-ying

IPC: H01F10/32 ,  H01F41/30

CPC classification number: G11C11/161 ,  B82Y40/00 ,  G01R33/00 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/65 ,  G11B5/66 ,  G11B2005/0024 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006

Abstract: Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400°C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.

Abstract translation: 公开了合成反铁磁（SAF）和合成亚铁磁（SyF）自由层结构，其减少Ho（对于SAF自由层），​​增加垂直磁各向异性（PMA），并且在至少400℃下提供更高的热稳定性。 SAF和SyF结构具有FL1 / DL1 / spacer / DL2 / FL2配置，其中FL1和FL2是具有PMA的自由层，耦合层根据厚度在FL1和FL2之间引起反铁磁或亚铁磁耦合，并且DL1和DL2是除尘层 增强FL1和FL2之间的耦合。 SAF自由层可以与STT-MRAM存储元件中的SAF参考层或包括自旋转移振荡器的自旋电子器件一起使用。 此外，描述了可以在Ho，PMA和热稳定性方面提供进一步优点的双重SAF结构。

公开(公告)号：WO2014043466A1

公开(公告)日：2014-03-20

申请号：PCT/US2013/059656

申请日：2013-09-13

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： KULA, Witold ,  JAN, Guenole ,  TONG, Ru-ying ,  WANG, Yu-jen

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer (21) between the storage (20) and cap (41) layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储器（20）和盖（41）层之间插入合适的氧化物层（21），获得改进的PMA性能，增加了较大的Eb / kT热因子的电位以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：WO2018231522A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/035097

申请日：2018-05-30

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： SUNDAR, Vignesh ,  WANG, Yu-jen ,  SHEN, Dongna ,  PATEL, Sahil ,  TONG, Ru-ying

IPC: H01L43/02 ,  C23C16/30 ,  H01L43/12 ,  H01L27/22

Abstract: A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processes. The PECVD method provides a higher magnetoresistive ratio for the MTJ than conventional methods after a 400°C anneal. In one embodiment, the SiON encapsulation layer is deposited using a N 2 O:silane flow rate ratio of at least 1 :1 but less than 15:1. A N 2 O plasma treatment may be performed immediately following the PECVD to ensure there is no residual silane in the SiON encapsulation layer. In another embodiment, a first (lower) SiON sub-layer has a greater Si content than a second (upper) SiON sub-layer. A second encapsulation layer is formed on the SiON encapsulation layer so that the encapsulation layers completely fill the gaps between adjacent MTJs.

公开(公告)号：WO2014011950A1

公开(公告)日：2014-01-16

申请号：PCT/US2013/050190

申请日：2013-07-12

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： JAN, Guenole ,  WANG, Yu-jen ,  TONG, Ru-ying

IPC: H01F10/32 ,  H01F41/30 ,  G11C19/08 ,  H01L43/08

CPC classification number: H01F10/3254 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

公开(公告)号：WO2013158690A1

公开(公告)日：2013-10-24

申请号：PCT/US2013/036851

申请日：2013-04-17

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： WANG, Yu-jen ,  KULA, Witold ,  TONG, Ru-Ying ,  JAN, Guenole

IPC: H01L21/00

CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400°C or higher, or following a subsequent anneal at 400°C or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400°C or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或者随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：WO2013130167A1

公开(公告)日：2013-09-06

申请号：PCT/US2012/070321

申请日：2012-12-18

Applicant: HEADWAY TECHNOLOGIES, INC. ,  WANG, Yu-jen ,  TONG, Ru-ying ,  JAN, Guenole

Inventor： WANG, Yu-jen ,  TONG, Ru-ying ,  JAN, Guenole

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。 自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。