公开(公告)号：WO2010008703A2

公开(公告)日：2010-01-21

申请号：PCT/US2009046681

申请日：2009-06-09

Applicant: INTEL CORP ,  LAVOIE ADRIEN R

Inventor： LAVOIE ADRIEN R

IPC: H01L21/208 ,  H01L21/288

CPC classification number: H01L21/76843 ,  C23C18/00 ,  C23C18/1204 ,  H01L21/288 ,  H01L21/76867

Abstract: Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise dissolving a metal precursor in a non-aqueous solvent in a bath; placing a substrate comprising an interconnect opening in the bath, wherein the metal precursor forms a monolayer within the interconnect opening; and placing the substrate in a coreactant mixture, wherein the coreactant reacts with the metal precursor to form a thin barrier monolayer.

Abstract translation: 描述了形成微电子结构的方法和相关结构。 这些方法可以包括将金属前体溶解在非水溶剂中的浴中; 将包括互连开口的基底放置在所述浴中，其中所述金属前体在所述互连开口内形成单层; 并将所述底物置于共反应混合物中，其中所述共反应物与所述金属前体反应以形成薄的屏障单层。

公开(公告)号：WO2012040732A3

公开(公告)日：2012-06-14

申请号：PCT/US2011053318

申请日：2011-09-26

Applicant: INTEL CORP ,  LAVOIE ADRIEN R

Inventor： LAVOIE ADRIEN R

IPC: H01L21/28

CPC classification number: H01L21/76844 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus includes an interconnect in a recess. The interconnect includes a liner structure and the liner structure in the recess. The liner structure is breached at the recess bottom feature and a bottom interconnect makes a single-interface contact with a subsequent interconnect through the breach.

Abstract translation: 一种装置包括在凹槽中的互连。 互连件包括衬垫结构和凹部中的衬垫结构。 衬垫结构在凹陷底部特征处被破坏，并且底部互连件通过突破而与随后的互连件进行单接口接触。