公开(公告)号：WO2009094263A1

公开(公告)日：2009-07-30

申请号：PCT/US2009/030821

申请日：2009-01-13

Applicant: PRAXAIR TECHNOLOGY, INC. ,  THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

Inventor： THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

IPC: C07F15/00 ,  C07F19/00 ,  C23C16/00

CPC classification number: C07F15/0046

Abstract: This invention relates to organometallic compounds having the formula (L 1 )M(L 2 ) Z wherein M is a metal or metalloid, L 1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L 2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L 1 and L 2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract translation: 本发明涉及具有式（L1）M（L2）Z的有机金属化合物，其中M是金属或准金属，L1相同或不同，并且是（i）取代或未取代的阴离子4电子给体配体或（ii） 取代或未取代的阴离子4电子给体配体与侧挂中性2电子供体部分，L2相同或不同，为（i）取代或未取代的阴离子2电子供体配体或（ii）取代或未取代的中性2电子给体配体 ; y是2的整数; z为0〜2的整数; 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。 有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

公开(公告)号：WO2009094262A1

公开(公告)日：2009-07-30

申请号：PCT/US2009/030814

申请日：2009-01-13

Applicant: PRAXAIR TECHNOLOGY, INC. ,  THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

Inventor： THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

IPC: C07F15/00 ,  C07F19/00 ,  C23C16/00

CPC classification number: C07F15/0046

Abstract: This invention relates to organometallic compounds having the formula (L 1 )M(L 2 )y wherein M is a metal or metalloid, L 1 is a substituted or unsubstituted anionic 6 electron donor ligand, L 2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L 1 and L 2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract translation: 本发明涉及具有式（L1）M（L2）y的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的阴离子6电子供体配体，L2相同或不同，为（i）取代的 或未取代的阴离子2电子供体配体，（ii）取代或未取代的阴离子4电子供体配体，（iii）取代或未取代的中性2电子供体配体，或（iv）取代或未取代的具有侧基的阴离子4电子给体配体 中性2电子供体部分; y为1〜3的整数， 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。 有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

公开(公告)号：WO2009094259A1

公开(公告)日：2009-07-30

申请号：PCT/US2009/030806

申请日：2009-01-13

Applicant: PRAXAIR TECHNOLOGY, INC. ,  THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

Inventor： THOMPSON, David, M. ,  GEARY, Joan ,  LAVOIE, Adrien, R. ,  DOMINGUEZ, Juan, E.

IPC: C07F15/00 ,  C07F19/00 ,  C23C16/00

CPC classification number: C07F15/0046

Abstract: This invention relates to organometallic compounds having the formula L 1 ML 2 wherein M is a metal or metalloid, L 1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L 2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L 1 and L 2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract translation: 本发明涉及具有式L1ML2的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的6电子给体阴离子配体，L2是取代或未取代的6电子给体阴离子配体，其中L1和L2相同 或不同的制备有机金属化合物的方法，以及由有机金属化合物制备膜或涂层的方法。 有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

公开(公告)号：WO2009012206A1

公开(公告)日：2009-01-22

申请号：PCT/US2008/069943

申请日：2008-07-14

Applicant: INTEL CORPORATION ,  PLOMBON, John J. ,  SIMKA, Harsono ,  LAVOIE, Adrien R. ,  DOMINGUEZ, Juan E.

Inventor： PLOMBON, John J. ,  SIMKA, Harsono ,  LAVOIE, Adrien R. ,  DOMINGUEZ, Juan E.

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L21/76828 ,  Y10T428/24545

Abstract: A method for fabricating an amorphous metal-metalloid alloy layer for use in an IC device comprises providing a substrate in a reactor that includes a dielectric layer having a trench, pulsing a metal precursor into the reactor to deposit within the trench, wherein the metal precursor is selected from the group consisting of CpTa(CO) 4 , PDMAT, TBTDET, TaCl 5 , Cp 2 Co, Co-amidinates, Cp 2 Ru, Ru-diketonates, and Ru(CO) 4 , purging the reactor after the metal precursor pulse, pulsing a metalloid precursor into the reactor to react with the metal precursor and form an amorphous metal-metalloid alloy layer, wherein the metalloid precursor is selected from the group consisting of BH 3 , BCl 3 , catechol borane, AlMe 3 , methylpyrrolidinealane, AlCl 3 , SiH 4 , SiH 2 Cl 2 , SiCl 4 , tetraalkylsilanes, GeH 4 , GeH 2 Cl 2 , GeCl 4 , SnCl 4 , trialkylantimony, SbMe 3 , SbEt 3 , arsine, and trimethylarsine, purging the reactor after the metalloid precursor pulse, and annealing the amorphous metal-metalloid layer at a temperature between 50°C and 700°C for 5 to 1200 seconds.

Abstract translation: 一种用于制造用于IC器件的非晶金属 - 准金属合金层的方法包括在反应器中提供衬底，该反应器包括具有沟槽的电介质层，将金属前体脉冲入反应器以沉积在沟槽内，其中金属前体 选自CpTa（CO）4，PDMAT，TBTDET，TaCl5，Cp2Co，Co-脒基物，Cp2Ru，Ru-二酮酸酯和Ru（CO）4），在金属前体脉冲之后进行反应，脉冲准金属 前体进入反应器以与金属前体反应并形成无定形金属 - 准金属合金层，其中准金属前体选自BH3，BCl3，儿茶酚硼烷，AlMe3，甲基吡咯烷烃，AlCl3，SiH4，SiH2Cl2，SiCl4， 四烷基硅烷，GeH 4，GeH 2 Cl 2，GeCl 4，SnCl 4，三烷基锑，SbMe 3，SbEt 3，胂和三甲基胂，在准金属前体脉冲之后吹扫反应器，并在温度下降退火无定形金属 - 在50℃和700℃下烘5〜1200秒。

公开(公告)号：WO2010008703A3

公开(公告)日：2010-01-21

申请号：PCT/US2009/046681

申请日：2009-06-09

Applicant: INTEL CORPORATION ,  LAVOIE, Adrien, R.

Inventor： LAVOIE, Adrien, R.

IPC: H01L21/208 ,  H01L21/288

Abstract: Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise dissolving a metal precursor in a non-aqueous solvent in a bath; placing a substrate comprising an interconnect opening in the bath, wherein the metal precursor forms a monolayer within the interconnect opening; and placing the substrate in a coreactant mixture, wherein the coreactant reacts with the metal precursor to form a thin barrier monolayer.

公开(公告)号：WO2010008703A2

公开(公告)日：2010-01-21

申请号：PCT/US2009046681

申请日：2009-06-09

Applicant: INTEL CORP ,  LAVOIE ADRIEN R

Inventor： LAVOIE ADRIEN R

IPC: H01L21/208 ,  H01L21/288

CPC classification number: H01L21/76843 ,  C23C18/00 ,  C23C18/1204 ,  H01L21/288 ,  H01L21/76867

Abstract: Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise dissolving a metal precursor in a non-aqueous solvent in a bath; placing a substrate comprising an interconnect opening in the bath, wherein the metal precursor forms a monolayer within the interconnect opening; and placing the substrate in a coreactant mixture, wherein the coreactant reacts with the metal precursor to form a thin barrier monolayer.

Abstract translation: 描述了形成微电子结构的方法和相关结构。 这些方法可以包括将金属前体溶解在非水溶剂中的浴中; 将包括互连开口的基底放置在所述浴中，其中所述金属前体在所述互连开口内形成单层; 并将所述底物置于共反应混合物中，其中所述共反应物与所述金属前体反应以形成薄的屏障单层。

公开(公告)号：WO2012040732A3

公开(公告)日：2012-06-14

申请号：PCT/US2011053318

申请日：2011-09-26

Applicant: INTEL CORP ,  LAVOIE ADRIEN R

Inventor： LAVOIE ADRIEN R

IPC: H01L21/28

CPC classification number: H01L21/76844 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus includes an interconnect in a recess. The interconnect includes a liner structure and the liner structure in the recess. The liner structure is breached at the recess bottom feature and a bottom interconnect makes a single-interface contact with a subsequent interconnect through the breach.

Abstract translation: 一种装置包括在凹槽中的互连。 互连件包括衬垫结构和凹部中的衬垫结构。 衬垫结构在凹陷底部特征处被破坏，并且底部互连件通过突破而与随后的互连件进行单接口接触。

公开(公告)号：WO2012040732A2

公开(公告)日：2012-03-29

申请号：PCT/US2011/053318

申请日：2011-09-26

Applicant: INTEL CORPORATION ,  LAVOIE, Adrien R.

Inventor： LAVOIE, Adrien R.

IPC: H01L21/28

CPC classification number: H01L21/76844 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus includes an interconnect in a recess. The interconnect includes a liner structure and the liner structure in the recess. The liner structure is breached at the recess bottom feature and a bottom interconnect makes a single-interface contact with a subsequent interconnect through the breach.

Abstract translation: 一种设备包括凹槽中的互连。 互连件包括衬里结构和凹槽中的衬里结构。 衬底结构在凹陷底部特征处被破坏，并且底部互连通过该裂口与后续互连形成单界面接触。

公开(公告)号：WO2004064544A1

公开(公告)日：2004-08-05

申请号：PCT/US2004/001628

申请日：2004-01-22

Applicant: DURAFIZZ, LLC ,  LAVOIE, Adrien, R. ,  SOANE, David, S.

Inventor： LAVOIE, Adrien, R. ,  SOANE, David, S.

IPC: A23L2/40

CPC classification number: A23L2/40 ,  A23V2002/00 ,  A23V2200/224 ,  A23V2250/51086 ,  A23V2250/11 ,  A23V2250/51088

Abstract: The present Invention relates to solid delivery systems for storage, distribution, and delivery of carbon dioxide into beverages. More specifically, this Invention is directed to methods and preparations for providing a powdered beverage formulation capable of sustained carbonation in aqueous solution and to methods for carbonating a beverage that sustainably releases carbon dioxide into the beverage.

Abstract translation: 本发明涉及用于将二氧化碳储存，分配和输送到饮料中的固体输送系统。 更具体地，本发明涉及用于提供能够在水溶液中持续碳酸化的粉末饮料制剂的方法和制备方法以及用于将可持续地将二氧化碳释放到饮料中的饮料碳酸化的方法。