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公开(公告)号:WO2021133978A1
公开(公告)日:2021-07-01
申请号:PCT/US2020/066950
申请日:2020-12-23
Applicant: KEPLER COMPUTING INC.
Inventor: THAREJA, Gaurav , MANIPATRUNI, Sasikanth , DOKANIA, Rajeev Kumar , RAMESH, Ramamoorthy , MATHURIYA, Amrita
IPC: H01L49/02 , H01L27/11507 , G11C11/221 , H01L27/11502 , H01L28/56 , H01L28/75
Abstract: Ferroelectric capacitor is formed by conformably depositing a non-conductive dielectric over the etched first and second electrodes, and forming a metal cap or helmet over a selective part of the non-conductive dielectric, wherein the metal cap conforms to portions of sidewalls of the non-conductive dielectric. The metal cap is formed by applying physical vapor deposition at a grazing angle to selectively deposit a metal mask over the selective part of the non-conductive dielectric. The metal cap can also be formed by applying ion implantation with tuned etch rate. The method further includes isotopically etching the metal cap and the non-conductive dielectric such that non-conductive dielectric remains on sidewalls of the first and second electrodes but not on the third and fourth electrodes.
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公开(公告)号:WO2022139890A1
公开(公告)日:2022-06-30
申请号:PCT/US2021/048762
申请日:2021-09-01
Applicant: KEPLER COMPUTING, INC.
Inventor: MANIPATRUNI, Sasikanth , FANG, Yuan-Sheng , MENEZES, Robert , DOKANIA, Rajeev Kumar , RAMESH, Ramamoorthy , MATHURIYA, Amrita
Abstract: A low power sequential circuit (e.g., latch) uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The sequential circuit includes a 3-input majority gate having first, second, and third inputs, and a first output. The sequential circuit includes a driver coupled to the first output, wherein the driver is to generate a second output. The sequential circuit further includes an exclusive-OR (XOR) gate to receive a clock and the second output, wherein the XOR gate is to generate a third output which couples to the second input, where the first input is to receive a data, and wherein the third input is to receive the second output.
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公开(公告)号:WO2021133986A1
公开(公告)日:2021-07-01
申请号:PCT/US2020/066961
申请日:2020-12-23
Applicant: KEPLER COMPUTING INC.
Inventor: MANIPATRUNI, Sasikanth , MENEZES, Robert , FANG, Yuan-Sheng , DOKANIA, Rajeev Kumar , THAREJA, Gaurav , RAMESH, Ramamoorthy , MATHURIYA, Amrita
IPC: H03K19/23 , H03K19/094 , G11C11/161 , G11C19/0841 , H01L27/0629 , H01L27/11502 , H01L27/22 , H01L28/55 , H01L28/75 , H01L29/516 , H03K19/003 , H03K19/01 , H03K19/16 , H03K19/20
Abstract: A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates and threshold gates. Input signals in the form of analog, digital, or a combination of them are driven to first terminals of non-ferroelectric capacitors. The second terminals of the non-ferroelectric capacitors are coupled to form a majority node. Majority function of the input signals occurs on this node. The majority node is then coupled to a first terminal of a capacitor comprising non-linear polar material. The second terminal of the capacitor provides the output of the logic gate, which can be driven by any suitable logic gate such as a buffer, inverter, NAND gate, NOR gate, etc. Any suitable logic or analog circuit can drive the output and inputs of the majority logic gate. As such, the majority gate of various embodiments can be combined with existing transistor technologies.
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公开(公告)号:WO2021133988A1
公开(公告)日:2021-07-01
申请号:PCT/US2020/066963
申请日:2020-12-23
Applicant: KEPLER COMPUTING INC.
Inventor: MANIPATRUNI, Sasikanth , FANG, Yuan-Sheng , MENEZES, Robert , DOKANIA, Rajeev Kumar , THAREJA, Gaurav , RAMESH, Ramamoorthy , MATHURIYA, Amrita
IPC: H03K19/23 , H03K19/094 , G06F7/501 , H01L28/55 , H01L28/65
Abstract: An adder uses with first and second majority gates. For a 1-bit adder, output from a 3-input majority gate is inverted and input two times to a 5 -input majority gate. Other inputs to the 5-input majority gate are the same as those of the 3 -input majority gate. The output of the 5 -input majority gate is a sum while the output of the 3-input majority gate is the carry. Multiple 1-bit adders are concatenated to form an N-bit adder. The input signals to the majority gates can be analog, digital, or a combination of them, which are driven to first terminals of non- ferroelectric capacitors. The second terminals of the non-ferroelectric capacitors are coupled to form a majority node. Majority function of the input signals occurs on this node. The majority node is then coupled to a first terminal of a non-linear polar capacitor. The second terminal of the capacitor provides the output of the logic gate.
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公开(公告)号:WO2021133983A1
公开(公告)日:2021-07-01
申请号:PCT/US2020/066958
申请日:2020-12-23
Applicant: KEPLER COMPUTING INC.
Inventor: THAREJA, Gaurav , MANIPATRUNI, Sasikanth , DOKANIA, Rajeev Kumar , RAMESH, Ramamoorthy , MATHURIYA, Amrita
IPC: H01L27/11507 , H01L49/02 , G11C11/221 , H01L27/11502 , H01L28/40
Abstract: The memory bit-cell formed using the ferroelectric capacitor results in a taller and narrower bit-cell compared to traditional memory bit-cells. As such, more bit-cells can be packed in a die resulting in a higher density memory that can operate at lower voltages than traditional memories while providing the much sought after non- volatility behavior. The pillar capacitor includes a plug that assists in fabricating a narrow pillar.
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公开(公告)号:WO2022246340A1
公开(公告)日:2022-11-24
申请号:PCT/US2022/070445
申请日:2022-01-31
Applicant: KEPLER COMPUTING INC.
Inventor: MANIPATRUNI, Sasikanth , RIOS, Rafael , REYNOLDS, Neal , ODINAKA, Ikenna , MENEZES, Robert , DOKANIA, Rajeev Kumar , RAMESH, Ramamoorthy , MATHURIYA, Amrita
Abstract: A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. Input signals in the form of digital signals are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node which provides a majority function of the inputs. The majority node is then coupled driver circuitry which can be any suitable logic gate such as a buffer, inverter, NAND gate, NOR gate, etc. In the multi-input majority or minority gates, the non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels. Bringing the majority output close to rail-to-rail voltage eliminates the high leakage problem faced from majority gates formed using linear input capacitors.
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公开(公告)号:WO2021133981A1
公开(公告)日:2021-07-01
申请号:PCT/US2020/066955
申请日:2020-12-23
Applicant: KEPLER COMPUTING INC.
Inventor: THAREJA, Gaurav , MANIPATRUNI, Sasikanth , DOKANIA, Rajeev Kumar , RAMESH, Ramamoorthy , MATHURIYA, Amrita
IPC: H01L27/11507 , H01L27/11509 , H01L49/02 , G11C11/221 , H01L28/56
Abstract: Approaches for integrating FE memory arrays into a processor, and the resulting structures are described. Simultaneous integrations of regions with ferroelectric (FE) cells and regions with standard interconnects are also described. FE cells include FE capacitors that include a FE stack of layers, which is encapsulated with a protection material. The protection material protects the FE stack of layers as structures for regular logic are fabricated in the same die.
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公开(公告)号:WO2020242781A1
公开(公告)日:2020-12-03
申请号:PCT/US2020/032974
申请日:2020-05-14
Applicant: KEPLER COMPUTING INC.
IPC: H01L23/495 , H01L23/34 , H01L23/498 , H01L21/768 , H01L27/108
Abstract: A packaging technology to improve performance of an AI processing system. An IC package includes: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die includes memory and the second die includes computational logic. The first die comprises DRAM having bit-cells. The memory of the first die may store input data and weight factors. The computational logic of the second die is coupled to the memory of the first die. In one example, the second die is an inference die that applies fixed weights for a trained model to an input data to generate an output. In one example, the second die is a training die that enables learning of the weights. Ultra high-bandwidth is changed by placing the first die below the second die. The two dies are wafer-to-wafer bonded or coupled via micro-bumps.
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公开(公告)号:WO2020190440A1
公开(公告)日:2020-09-24
申请号:PCT/US2020/018875
申请日:2020-02-19
Applicant: KEPLER COMPUTING INC.
Abstract: Described is a packaging technology to improve performance of an AI processing system. An IC package comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die includes memory and the second die includes computational logic. The first die comprises RAM such as a ferroelectric RAM (FeRAM), SRAM, or DRAM having bit-cells. Each bit-cell comprises an access transistor and a capacitor including ferroelectric material. The access transistor is coupled to the ferroelectric material. The memory of the first die may store input data and weight factors. The computational logic of the second die is coupled to the memory of the first die. The second die is an inference die that applies fixed weights for a trained model to an input data to generate an output. In one example, the second die is a training die that enables learning of the weights.
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