公开(公告)号：WO2018222613A1

公开(公告)日：2018-12-06

申请号：PCT/US2018/034935

申请日：2018-05-29

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio ,  DZIURA, Thaddeus, Gerard

IPC: G01N23/201 ,  G01B15/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  G01N23/20083 ,  G01N2223/6116 ,  G03F7/70525 ,  G03F7/70616 ,  H01L21/67253 ,  H01L22/12

Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.

公开(公告)号：WO2003001297A2

公开(公告)日：2003-01-03

申请号：PCT/US2002/020876

申请日：2002-06-26

Applicant: KLA-TENCOR CORPORATION

Inventor： MIEHER, Walter, Dean ,  DZIURA, Thaddeus, Gerard ,  LEVY, Ady ,  MACK, Chris

IPC: G03F

CPC classification number: G03F7/70491 ,  G03F7/706 ,  G03F7/70625 ,  G03F7/70641

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract translation: 本发明涉及一种用于确定光刻系统的工艺参数设置的方法。 该方法包括将第一组一个或多个形状参数（12）的值与一个或多个处理参数的第一组的值相关联。 该方法还包括确定与一个或多个结构（14）相关联的一个或多个形状参数的第二组的值。 该方法还包括通过将一个或多个形状参数的第二组与相关依赖关系（16）进行比较来确定与形成一个或多个结构相关联的一个或多个过程参数的第二组的值。