公开(公告)号：WO2020018366A1

公开(公告)日：2020-01-23

申请号：PCT/US2019/041573

申请日：2019-07-12

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  XUE, Jun ,  TAN, Samantha SiamHwa ,  PAN, Yang ,  LEE, Younghee

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/02 ,  H01L21/67

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15 o C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

公开(公告)号：WO2021041916A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/048551

申请日：2020-08-28

Applicant: LAM RESEARCH CORPORATION

Inventor： WEIMER, Matthew Scott ,  PUTHENKOVILAKAM, Ragesh ,  MACDONALD, Gordon Alex ,  ZHANG, Shaoqing ,  LEE, Shih-Ked ,  XUE, Jun ,  TAN, Samantha S.H. ,  ZHAO, Xizhu ,  MANUMPIL, Mary Anne ,  HUDSON, Eric A. ,  HSU, Chin-Jui

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/27 ,  C23C16/46 ,  C23C16/56 ,  H01J37/32

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

公开(公告)号：WO2020197866A1

公开(公告)日：2020-10-01

申请号：PCT/US2020/023239

申请日：2020-03-18

Applicant: LAM RESEARCH CORPORATION

Inventor： XUE, Jun ,  MANUMPIL, Mary Anne ,  LEE, Shih-Ked ,  TAN, Samantha SiamHwa

IPC: C23C16/26 ,  C23C16/505 ,  H01J37/32 ,  H01L21/033

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from -20°C to 200°C; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

公开(公告)号：WO2020072277A1

公开(公告)日：2020-04-09

申请号：PCT/US2019/053245

申请日：2019-09-26

Applicant: LAM RESEARCH CORPORATION

Inventor： XUE, Jun ,  TAN, Samantha SiamHwa ,  BROURI, Mohand ,  LI, Yuanhui ,  PETER, Daniel ,  KABANSKY, Alexander

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/67

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

公开(公告)号：WO2021262371A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/034019

申请日：2021-05-25

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  LI, Da ,  LEE, Younghee ,  TAN, Samantha SiamHwa ,  JENSEN, Alan J. ,  XUE, Jun ,  MANUMPIL, Mary Anne

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/67 ,  H01J37/32 ,  G03F7/0042 ,  G03F7/094 ,  G03F7/16 ,  G03F7/167 ,  H01L21/67207 ,  H01L21/68 ,  H01L29/66227

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

公开(公告)号：WO2021146138A1

公开(公告)日：2021-07-22

申请号：PCT/US2021/012953

申请日：2021-01-11

Applicant: LAM RESEARCH CORPORATION

Inventor： XUE, Jun ,  MANUMPIL, Mary Anne ,  LI, Da ,  TAN, Samantha S.H. ,  YU, Jengyi

IPC: G03F7/00 ,  G03F7/11 ,  G03F7/004

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.