公开(公告)号：WO2022010809A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040381

申请日：2021-07-02

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha S.H. ,  ALVI, Mohammed Haroon ,  WISE, Richard ,  PAN, Yang ,  GOTTSCHO, Richard A. ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  WEIDMAN, Timothy William ,  LIN, Qinghuang ,  HUBACEK, Jerome

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67 ,  C23C16/00 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/168 ,  H01L21/67167 ,  H01L21/67207

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：WO2022237524A1

公开(公告)日：2022-11-17

申请号：PCT/CN2022/089228

申请日：2022-04-26

Applicant: 北京北方华创微电子装备有限公司

Inventor： 纪克红

IPC: H01L21/67 ,  H01L21/67011 ,  H01L21/67207

Abstract: 本申请公开一种半导体腔室，包括腔室主体和磁场调节机构，磁场调节机构包括支架和多个磁性件，其中：支架设于腔室主体之外，多个磁性件活动地设于支架上，多个磁性件环绕腔室主体设置，每个磁性件均可在第一位置与第二位置之间切换，支架用于在磁性件处于第一位置的情况下，使磁性件形成的磁场位于腔室主体之外；在磁性件处于第二位置的情况下，使磁性件形成的磁场至少部分位于腔室主体之内。上述方案能够解决半导体腔室内的磁场强度存在调节不方便的问题。本申请还公开一种半导体设备。

公开(公告)号：WO2022005504A1

公开(公告)日：2022-01-06

申请号：PCT/US2020/056792

申请日：2020-10-22

Applicant: QORVO BIOTECHNOLOGIES, LLC

Inventor： DENIZ, Derya ,  JOHNSTON, Philip ,  HELLAND, Jay ,  BELSICK, John ,  MCCARRON, Kevin

IPC: C23C14/35 ,  C23C14/22 ,  C23C14/34 ,  C23C14/56 ,  H01J37/34 ,  H01L21/67 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67748 ,  H01L21/68764

Abstract: A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

公开(公告)号：WO2023278387A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035235

申请日：2022-06-28

Applicant: APPLIED MATERIALS, INC.

Inventor： PARIKH, Suketu ,  JANSEN, Alexander ,  LEE, Joung Joo ,  LIU, Lequn

IPC: H01L21/768 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

Abstract: Interconnect structures on a substrate have low resistivity and high dopant interfaces. In some embodiments, the structures may have an opening with a sidewall from an upper surface to an underlying metallic layer of copper, a barrier layer of tantalum nitride formed on the sidewall of the opening, a liner layer of cobalt or ruthenium formed on the barrier layer and on the underlying metallic layer, a first copper layer with a dopant with a first dopant content formed on the liner layer and filling a lower portion of the opening to form a via - the first dopant content is approximately 0.5 percent to approximately 10 percent, and a second copper layer with the dopant with a second dopant content formed on the first copper layer and filling the at least one opening - the second dopant content is more than zero to approximately 0.5 percent of the dopant and is less than the first dopant content.

公开(公告)号：WO2022207976A1

公开(公告)日：2022-10-06

申请号：PCT/FI2022/050200

申请日：2022-03-29

Applicant: BENEQ OY

Inventor： WESSLIN, Johannes ,  SOININEN, Pekka ,  ANDERSSON, Jonas

IPC: C23C16/455 ,  H01L21/677 ,  H01L21/67 ,  C23C16/45544 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67739

Abstract: The invention relates to a loading device (100), arrangement, and method for loading a reaction chamber (200) inside a vacuum chamber (10). The loading device (100) comprises a loading platform (110) arranged to support the reaction chamber (200), the loading platform (110) having a first end (115), a second end (116) and a first direction (A), a first loading member (120) provided to the loading platform (110), and a second loading member (122) provided to the loading platform (110), the first loading member (120) being arranged independently movable in relation to the loading platform (110) and the second loading member (122) in the first direction (A), and the second loading member (122) being arranged independently movable in relation to the loading platform (110) and the first loading member (120) in the first direction (A).

公开(公告)号：WO2021262371A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/034019

申请日：2021-05-25

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  LI, Da ,  LEE, Younghee ,  TAN, Samantha SiamHwa ,  JENSEN, Alan J. ,  XUE, Jun ,  MANUMPIL, Mary Anne

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/67 ,  H01J37/32 ,  G03F7/0042 ,  G03F7/094 ,  G03F7/16 ,  G03F7/167 ,  H01L21/67207 ,  H01L21/68 ,  H01L29/66227

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.