公开(公告)号：WO2009082138A3

公开(公告)日：2009-09-17

申请号：PCT/KR2008007555

申请日：2008-12-19

Applicant: LG CHEMICAL LTD ,  LEE DO YOUNG ,  LEE JIN HO ,  CHOI JI WOONG

Inventor： LEE DO YOUNG ,  LEE JIN HO ,  CHOI JI WOONG

IPC: E06B3/32

CPC classification number: E06B3/4618

Abstract: The present invention discloses a sliding window system for a multistoried building, which has structural strength to endure external wind pressure and also allows natural ventilation of the indoor space. The sliding window system for a multistoried building comprises a curtain wall including a plurality of transoms and mullions and having a plurality of window installation spaces formed by the transoms and the mullions; a plurality of fixed windows disposed in some of the window installation spaces of the curtain wall, each fixed window comprising at least one fixed window frame mounted fixedly to two transoms and two mullions; and at least one sliding window disposed in the window installation space and mounted to two mullions and two transoms to be opened and closed. Here, each sliding window comprises a sliding window frame slidably mounted to rails mounted to the corresponding transoms and a fixed window frame fixed to the transoms and the mullions. In addition, each of the fixed window frame of the sliding window and the fixed window frame of the fixed window comprises upper and lower horizontal frames respectively fixed to the transoms and two vertical frames disposed at both ends of the horizontal frames and fixed to the mullions.

Abstract translation: 本发明公开了一种用于多层建筑的滑动窗系统，其具有承受外部风压的结构强度并且还允许室内空间的自然通风。 用于多层建筑的滑动窗系统包括：幕墙，其包括多个横梁和竖框，并具有由横梁和竖框形成的多个窗户安装空间; 设置在所述幕墙的一些窗户安装空间中的多个固定窗，每个固定窗包括固定在两个横梁和两个竖框上的固定窗框; 以及设置在窗户安装空间中的至少一个滑动窗口，并且安装到两个竖框和两个横梁上以被打开和关闭。 这里，每个滑动窗口包括可滑动地安装到安装到相应横梁上的导轨的滑动窗框和固定到横梁和竖框的固定窗框。 此外，滑动窗口的固定窗框和固定窗的固定窗框分别包括分别固定在横梁上的上下水平框架和设置在水平框架两端的两个垂直框架并固定在竖框上 。

公开(公告)号：WO2013073796A3

公开(公告)日：2013-07-11

申请号：PCT/KR2012009409

申请日：2012-11-08

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function. In the substrate stacked image sensor, first to fourth photodiodes are disposed on a first substrate, and a fifth photodiode is disposed on a second substrate to couple the first to fourth photodiodes to the fifth photodiode when the substrates are stacked and coupled to each other, thereby providing a complete photodiode for one pixel. The image sensor may selectively read signals separately detected in each of the photodiodes or read all of the signals as necessary. To this end, the first to fourth photodiodes are disposed on the first substrate, and the fifth photodiode is disposed on the second substrate. Then, the first to fourth photodiodes and the fifth photodiode electrically contact each other so that the first and second substrates have different pixel arrays and thus different sensor resolutions.

Abstract translation: 本发明涉及具有双重检测功能的基板层叠图像传感器。 在基板堆叠图像传感器中，第一至第四光电二极管设置在第一基板上，并且第五光电二极管设置在第二基板上，以在基板堆叠并彼此耦合时将第一至第四光电二极管耦合到第五光电二极管， 从而为一个像素提供完整的光电二极管。 图像传感器可以选择性地读取在每个光电二极管中单独检测的信号，或者根据需要读取所有信号。 为此，第一至第四光电二极管设置在第一基板上，第五光电二极管设置在第二基板上。 然后，第一至第四光电二极管和第五光电二极管彼此电接触，使得第一和第二基板具有不同的像素阵列，从而具有不同的传感器分辨率。

公开(公告)号：WO2009051379A3

公开(公告)日：2009-07-16

申请号：PCT/KR2008006030

申请日：2008-10-14

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/37457

Abstract: Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges.

Abstract translation: 公开了一种图像传感器中使用的4T-4S步进重复单位像素以及具有该像素的图像传感器。 4T-4S步进＆重复单元像素具有用于光电二极管的四个扩散区域图案和用于图像信号转换电路的三个扩散区域图案。 通过使用彼此沿对角方向布置的四个光电二极管和布置在靠近其边缘的光电二极管之间的三个扩散区域图案，图像传感器的孔径比最大地增加。

公开(公告)号：WO2006109937A9

公开(公告)日：2007-11-15

申请号：PCT/KR2006001144

申请日：2006-03-29

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an image sensor can be manufactured to have a good sensitivity, without having to use a micro lens. In addition, by disposing the photodiode at the top layer, an incident angle margin of incident light can be secured, which has to be basically provided by the sensor for its auto focusing function or zoom function.

Abstract translation: 提供了可以处理以各种角度发生在光电二极管上的光并且通过确保入射角度边缘来提供微型相机模块中的变焦功能的图像传感器的分离型单位像素及其制造方法。 具有由多个晶体管组成的图像传感器的3D结构的分离型单位像素包括：第一晶片，其包括光电二极管，转移晶体管，浮动扩散区的节点，用作静电用于转换电荷 以及将浮动扩散区域和传输晶体管分别连接到外部电路的焊盘; 包括构成像素的其余电路元件（即，复位晶体管，源极跟随器晶体管和阻塞开关晶体管）的第二晶片，读出电路，垂直/水平解码器，相关双采样 （CDS）电路，其涉及传感器操作和图像质量，模拟电路，模数转换器（ADC），数字电路和连接每个像素的焊盘; 以及连接装置，其连接第一晶片的焊盘和第二晶片的焊盘。 因此，通过形成光电二极管的面积和像素的面积几乎相同，可以制造图像传感器以具有良好的灵敏度，而不必使用微透镜。 此外，通过将光电二极管设置在顶层，可以确保入射光的入射角度边缘，基本上必须由传感器提供入射光的自动聚焦功能或缩放功能。

公开(公告)号：WO2009011535A2

公开(公告)日：2009-01-22

申请号：PCT/KR2008004140

申请日：2008-07-15

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE BYOUNG SU ,  LEE DO YOUNG

Inventor： LEE BYOUNG SU ,  LEE DO YOUNG

IPC: G01N21/00

CPC classification number: G01N21/6454 ,  B01L3/5085 ,  B01L2200/12 ,  B01L2300/0654 ,  G01N21/76

Abstract: Provided are a diagnosis device in which a bio-chemical reaction between a reference sample and a target sample occurs and a result of the bio-chemical reaction can be detected and a method of manufacturing the diagnosis device. The diagnosis device includes an image sensor where a plurality of photo-detectors are formed; a polymer layer which is made of a polymer material and formed on an upper portion of the image sensor; and a plurality of wells which are formed corresponding to the plurality of photo-detectors on the polymer layer, wherein an inner portion of each well is empty.

Abstract translation: 提供了一种诊断装置，其中发生参考样品和目标样品之间的生物化学反应，并且可以检测生物化学反应的结果和制造诊断装置的方法。 诊断装置包括形成多个光电检测器的图像传感器; 聚合物层，其由聚合物材料制成并形成在图像传感器的上部; 以及对应于聚合物层上的多个光电检测器形成的多个阱，其中每个阱的内部是空的。

公开(公告)号：WO2013022269A2

公开(公告)日：2013-02-14

申请号：PCT/KR2012006293

申请日：2012-08-08

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146 ,  H04N5/335

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/3745 ,  H04N5/37457 ,  H04N9/045 ,  H04N13/0239

Abstract: The present invention relates to an image sensor in which substrates are stacked. In the multi-substrate image sensor according to the present invention, a first photodiode is disposed on a first substrate, and a second photodiode is disposed on a second substrate. Then, the two substrates are aligned with and bonded to each other to electrically connect the two photodiodes to each other, thereby manufacturing an integrated photodiode within one pixel.

Abstract translation: 本发明涉及一种其中堆叠衬底的图像传感器。 在根据本发明的多基板图像传感器中，第一光电二极管设置在第一基板上，第二光电二极管设置在第二基板上。 然后，两个基板彼此对准并且彼此结合，以将两个光电二极管彼此电连接，从而在一个像素内制造集成的光电二极管。

公开(公告)号：WO2009057924A3

公开(公告)日：2009-07-02

申请号：PCT/KR2008006337

申请日：2008-10-28

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/14

CPC classification number: H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

Abstract: Disclosed is a 4T-2S step & repeat unit cell obtained by combining four image sensor unit cells each having four transistors into a single unit. A 4T-2S step & repeat unit cell includes a first photodiode diffusion area pattern, a second photodiode diffusion area pattern, a third photodiode diffusion area pattern, a fourth photodiode diffusion area pattern, a first image signal conversion circuit diffusion area pattern, and a second image signal conversion circuit diffusion area pattern. The second photodiode diffusion area pattern is formed in a diagonal direction from the first photodiode diffusion area pattern. The third photodiode diffusion area pattern is formed above the first photodiode diffusion area pattern beside the second photodiode diffusion area pattern. The fourth photodiode diffusion area pattern is formed in a diagonal direction from the third photodiode diffusion area pattern above the second photodiode diffusion area pattern. The first image signal conversion circuit diffusion area pattern is formed beside the first photodiode diffusion area pattern below the second photodiode diffusion area pattern. The second image signal conversion circuit diffusion area pattern is formed above the third photodiode diffusion area pattern beside the fourth photodiode diffusion area pattern.

Abstract translation: 公开了通过将每个具有四个晶体管的四个图像传感器单元单元组合成单个单元而获得的4T-2S步进＆重复单元单元。 4T-2S步进重复单位单元包括第一光电二极管扩散区域图案，第二光电二极管扩散区域图案，第三光电二极管扩散区域图案，第四光电二极管扩散区域图案，第一图像信号转换电路扩散区域图案以及 第二图像信号转换电路扩散区域图案。 第二光电二极管扩散区域图案从第一光电二极管扩散区域图案沿对角线方向形成。 第三光电二极管扩散区图案形成在第二光电二极管扩散区图案旁边的第一光电二极管扩散区图案上方。 第四光电二极管扩散区图案形成在第二光电二极管扩散区图案上方的第三光电二极管扩散区图案的对角线方向上。 第一图像信号转换电路扩散区图案形成在第二光电二极管扩散区图案下方的第一光电二极管扩散区图案旁边。 第二图像信号转换电路扩散区图案形成在第四光电二极管扩散区图案旁边的第三光电二极管扩散区图案上方。

公开(公告)号：WO2009020318A3

公开(公告)日：2009-04-16

申请号：PCT/KR2008004509

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG ,  KIM SHIN

Inventor： LEE DO YOUNG ,  KIM SHIN

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14643

Abstract: Provided is a unit pixel suppressing a dead zone and an afterimage. The unit pixel includes: one or more photodiodes generating image charges corresponding to a received image signal; and one or more transfer transistors for transferring the image charges to a floating diffusion area by performing switching operations in response to a transfer control signal, wherein portions of the one or more photodiode areas, which are close to gate terminals of the corresponding transfer transistors have higher concentration of impurity ions than the remaining portions, wherein an equipotential surface having the highest or lowest voltage level among equipotential surfaces is disposed at the portions of the photodiode areas close to the gate terminals of the transfer transistors, or wherein the portions of the photodiode areas close to the gate terminals of the transfer transistors have a depth deeper than the remaining portions of the photodiode.

Abstract translation: 提供抑制死区和残像的单位像素。 单位像素包括：一个或多个光电二极管，产生对应于接收到的图像信号的图像电荷; 以及用于通过响应于传送控制信号执行切换操作将图像电荷传送到浮动扩散区域的一个或多个转移晶体管，其中靠近相应的转移晶体管的栅极端子的一个或多个光电二极管区域的部分具有 杂质离子的浓度比剩余部分高，其中在等电位表面中具有最高或最低电压电平的等势面设置在靠近转移晶体管的栅极端子的光电二极管区域的部分处，或者其中光电二极管的部分 接近转移晶体管的栅极端子的区域的深度比光电二极管的其余部分深。

公开(公告)号：WO2009020316A3

公开(公告)日：2009-04-16

申请号：PCT/KR2008004507

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply.

Abstract translation: 提供了用于在低照度条件下提高灵敏度的单位像素和制造单位像素的方法。 单位像素包括：光电二极管，产生对应于图像信号的图像电荷; 将图像电荷转移到浮动扩散区域的传输晶体管; 以及复位晶体管，其具有连接到所述浮动扩散区域的端子，并且施加有电源的另一端子，其中注入到所述浮动扩散区域中的杂质离子的浓度低于注入到所述复位晶体管的扩散区域中的杂质离子的浓度 应用电源。

公开(公告)号：WO2009020315A2

公开(公告)日：2009-02-12

申请号：PCT/KR2008004506

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area.

Abstract translation: 提供了用于防止灵敏度降低以防止耗尽区域减小的分离型单元像素和驱动单位像素的方法。 用于防止灵敏度降低的分离型单位像素包括：基板; 由P型扩散区域和N型扩散区域的接合部构成的光电二极管，其形成在基板的表面的垂直方向上; 栅电极导体，其设置在与所述N型或P型扩散区相邻的所述衬底的表面的上部; 形成为与栅电极导体的另一表面相邻的浮动扩散区域; 以及设置在光电二极管区域的上部以覆盖光电二极管区域的灵敏度降低防止导体。