公开(公告)号：WO2013109886A1

公开(公告)日：2013-07-25

申请号：PCT/US2013/022140

申请日：2013-01-18

Applicant: LIFE TECHNOLOGIES CORPORATION ,  BUSTILLO, James ,  REARICK, Todd ,  HINZ, Wolfgang ,  FIFE, Keith

Inventor： BUSTILLO, James ,  REARICK, Todd ,  HINZ, Wolfgang ,  FIFE, Keith

IPC: G01N27/414

CPC classification number: B01L3/5027 ,  B01L3/502707 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/0893 ,  G01N27/4145

Abstract: A method of fabricating a microwell in an array structure is disclosed herein. The array structure includes a plurality of field effect transistors (FETs), where each FET has a gate structure. The method includes disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer is disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET is etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process. The gate structure is specified as a floating gate structure and the FET is an ISFET.

Abstract translation: 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构包括多个场效应晶体管（FET），其中每个FET具有栅极结构。 该方法包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。 绝缘层设置在阵列结构上，其中绝缘层位于TiN层上方。 此外，蚀刻至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。 栅极结构被指定为浮置栅极结构，FET是ISFET。

公开(公告)号：WO2014149778A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/020887

申请日：2014-03-05

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： FIFE, Keith ,  OWENS, Jordan ,  LI, Shifeng ,  BUSTILLO, James

IPC: G01N27/414

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.

Abstract translation: 在一个实施例中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面，并沿开口的侧壁延伸一段距离，该距离由第一电介质的厚度限定。

公开(公告)号：WO2013109559A1

公开(公告)日：2013-07-25

申请号：PCT/US2013/021622

申请日：2013-01-16

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： LI, Shifeng ,  BUSTILLO, James ,  HINZ, Wolfgang

IPC: G01N27/27 ,  B01L3/00 ,  C12M1/32 ,  G01N27/414 ,  G01N33/543

CPC classification number: G01N27/4148 ,  B01L3/5027 ,  B01L2200/0668 ,  B01L2200/12 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/0893 ,  G01N27/26 ,  G01N27/27 ,  G01N27/4145 ,  H01L21/302 ,  H01L21/31 ,  Y10T436/14 ,  Y10T436/142222 ,  Y10T436/143333

Abstract: A system includes a sensor including a sensor pad and includes a well wall structure defining a well operatively connected to the sensor pad. The sensor pad is associated with a lower surface of the well. The well wall structure defines an upper surface and a wall surface extending between the upper surface and the lower surface. The upper surface is defined by an upper buffer material having a high intrinsic buffer capacity of at least 2x 10 17 hydroxyl groups/m 2 at pH=7. The wall surface is defined by a wall material having a low intrinsic buffer capacity of not greater than 1.7x10 17 hydroxyl groups/m 2 at pH=7.

Abstract translation: 一种系统包括传感器，其包括传感器垫，并且包括限定可操作地连接到传感器垫的井的井壁结构。 传感器垫与井的下表面相关联。 井壁结构限定了在上表面和下表面之间延伸的上表面和壁表面。 上表面由在pH = 7时具有至少2×10 17个羟基/ m 2的高本征缓冲能力的上缓冲材料限定。 壁表面由在pH = 7时具有不大于1.7×10 17个羟基/ m 2的低本征缓冲能力的壁材料限定。

公开(公告)号：WO2017035338A1

公开(公告)日：2017-03-02

申请号：PCT/US2016/048658

申请日：2016-08-25

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： BUSTILLO, James ,  GRAY, Jeremy ,  OWENS, Jordan

IPC: G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L29/42324

Abstract: An apparatus includes a substrate, a gate structure disposed over the substrate and having an upper surface, a well structure disposed over the substrate and defining a well over the upper surface of the gate structure, a conductive layer disposed on the upper surface of the gate structure and at least partially extending along a wall of the well in the well structure, and a dielectric structure disposed over the well structure and defining an opening to the well.

Abstract translation: 一种设备包括：衬底，设置在衬底上方并具有上表面的栅极结构，设置在衬底上并在栅极结构的上表面上限定阱的阱结构;设置在栅极的上表面上的导电层 结构，并且沿着井的结构中的井的壁至少部分地延伸，以及设置在井结构上并且限定到井的开口的电介质结构。

公开(公告)号：WO2013109877A2

公开(公告)日：2013-07-25

申请号：PCT/US2013/022129

申请日：2013-01-18

Applicant: LIFE TECHNOLOGIES CORPORATION ,  LI, Shifeng ,  BUSTILLO, James ,  HINZ, Wolfgang

Inventor： LI, Shifeng ,  BUSTILLO, James ,  HINZ, Wolfgang

IPC: G01N27/414

CPC classification number: G01N27/4145 ,  C12Q1/6869 ,  G01N27/414 ,  Y10T436/143333

Abstract: In one implementation, a chemical detection device is described herein. The device includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines a cavity extending to the upper surface of the floating gate conductor. A conductive layer is on a sidewall of the cavity and electrically communicating with the floating gate conductor. An inner surface of the conductive layer defines a well for the sensor.

Abstract translation: 在一个实施方案中，本文描述了化学检测装置。 该器件包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定延伸到浮动栅极导体的上表面的空腔。 导电层位于空腔的侧壁上并与浮动栅极导体电连通。 导电层的内表面限定了传感器的孔。

公开(公告)号：WO2018049350A1

公开(公告)日：2018-03-15

申请号：PCT/US2017/051010

申请日：2017-09-11

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： LI, James ,  OWENS, Jordan ,  BUSTILLO, James

IPC: G01N27/414

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

Abstract translation: 在一个实施例中，描述了化学传感器。 化学传感器包括化学敏感的场效应晶体管，其包括具有上表面的浮置栅极导体，穿过第一材料并穿过位于第一材料上的第二材料的一部分延伸的第一开口以及从底部延伸的第二开口 第一个开口位于浮栅导体上表面上的衬层顶部。

公开(公告)号：WO2014200775A9

公开(公告)日：2014-12-18

申请号：PCT/US2014/040923

申请日：2014-06-04

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： ROTHBERG, Jonathan ,  FIFE, Keith ,  BUSTILLO, James ,  OWENS, Jordan

IPC: G01N27/414

Abstract: The device includes a material defining a reaction region. The device includes a plurality of chemically-sensitive field effect transistors (chemFET) each having a common floating gate (370) in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically- sensitive field effect transistors indicating an analyte within the reaction region.

公开(公告)号：WO2014200775A1

公开(公告)日：2014-12-18

申请号：PCT/US2014/040923

申请日：2014-06-04

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： ROTHBERG, Jonathan ,  FIFE, Keith ,  BUSTILLO, James ,  OWENS, Jordan

IPC: G01N27/414

CPC classification number: G01N27/4145 ,  C12Q1/6874 ,  G01N27/414 ,  H01L29/66825

Abstract: The device includes a material defining a reaction region. The device includes a plurality of chemically-sensitive field effect transistors (chemFET) each having a common floating gate (370) in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically- sensitive field effect transistors indicating an analyte within the reaction region.

Abstract translation: 该装置包括限定反应区域的材料。 该器件包括多个化学敏感的场效应晶体管（chemFET），每个具有与反应区域连通的公共浮动栅极（370）。 该器件还包括一个电路，以从化学敏感的场效应晶体管获得指示反应区域内的分析物的各自的输出信号。

公开(公告)号：WO2014149780A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/020900

申请日：2014-03-05

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： FIFE, Keith ,  OWENS, Jordan ,  LI, Shifeng ,  BUSTILLO, James

IPC: G01N27/414

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/28273

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

Abstract translation: 在一个实施例中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口，该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

公开(公告)号：WO2014149779A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/020892

申请日：2014-03-05

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： FIFE, Keith ,  OWENS, Jordan ,  LI, Shifeng ,  BUSTILLO, James

IPC: G01N27/414

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

Abstract translation: 在一个实施方式中，描述了化学装置。 传感器包括化学敏感的场效应晶体管，其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。