MEMORY SYSTEM AND METHOD USING STACKED MEMORY DEVICE DICE, AND SYSTEM USING THE MEMORY SYSTEM
    2.
    发明申请
    MEMORY SYSTEM AND METHOD USING STACKED MEMORY DEVICE DICE, AND SYSTEM USING THE MEMORY SYSTEM 审中-公开
    存储器系统和使用堆叠的存储器器件的方法,以及使用存储器系统的系统

    公开(公告)号:WO2010011503A3

    公开(公告)日:2010-04-15

    申请号:PCT/US2009050155

    申请日:2009-07-09

    Abstract: A memory system and method uses stacked memory device dice coupled to each other and to a logic die. The logic die may include a timing correction system that is operable to control the timing at which the logic die receives signals, such as read data signals, from each of the memory device dice. The timing correction controls the timing of the read data or other signals by adjusting the timing of respective strobe signals, such as read strobe signals, that are applied to each of the memory device dice. The memory device dice may transmit read data to the memory device at a time determined by when it receives the respective strobe signals. The timing of each of the strobe signals is adjusted so that the read data or other signals from all of the memory device dice are received at the same time.

    Abstract translation: 存储器系统和方法使用彼此耦合并且耦合到逻辑裸片的堆叠存储器器件管芯。 逻辑裸片可以包括定时校正系统,该定时校正系统可操作以控制逻辑裸片接收来自每个存储器件裸片的信号(诸如读取数据信号)的时序。 定时校正通过调整施加到每个存储设备骰子的各个选通信号(例如读选通信号)的定时来控制读数据或其他信号的定时。 存储设备管芯可以在由接收相应选通信号的时间确定的时间将读取数据传输到存储器设备。 每个选通信号的定时被调整,使得来自所有存储器装置骰子的读取数据或其他信号同时被接收。

    MEMORY DEVICE AND METHOD HAVING A DATA BYPASS PATH TO ALLOW RAPID TESTING AND CALIBRATION
    3.
    发明申请
    MEMORY DEVICE AND METHOD HAVING A DATA BYPASS PATH TO ALLOW RAPID TESTING AND CALIBRATION 审中-公开
    具有数据旁路的存储器件和方法允许快速测试和校准

    公开(公告)号:WO2006121874A3

    公开(公告)日:2007-08-02

    申请号:PCT/US2006017439

    申请日:2006-05-04

    Abstract: A synchronous dynamic random access memory ("SDRAM") device (100) includes a pipelined write data path coupling data from a data bus to a DRAM array (122), and a pipelined read data path coupling read data from the array ((122) to the data bus. The SDRAM device also includes a bypass path allowing the write data in the write data path to be coupled directly to the read data path without firs being stored in the DRAM array. The write data are preferably coupled through the write data path by issuing a write command to the DRAM device, and the read data are preferably coupled through the read data path by issuing a read command to the DRAM device. The memory array is inhibited from responding to these commands so that the write data are not stored in the array, and read data from the array are not coupled to the read data path.

    Abstract translation: 同步动态随机存取存储器(“SDRAM”)装置(100)包括将从数据总线到DRAM阵列(122)的数据耦合的流水线写入数据路径,以及将读取数据从阵列((122 )SDRAM装置还包括旁路路径,允许写入数据路径中的写入数据直接耦合到读取数据路径,而没有保存在DRAM阵列中的数据,写入数据优选地通过写入 通过向DRAM设备发出写入命令,读取数据优选地通过读取数据路径耦合到DRAM设备,读取命令被禁止响应于这些命令,使得写入数据是 不存储在阵列中,并且从阵列读取数据不会耦合到读取的数据路径。

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