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    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
    1.
    发明申请
    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF 审中-公开
    蚀刻硅结构，形成蚀刻硅结构的方法及其用途

    公开(公告)号：WO2013140177A2

    公开(公告)日：2013-09-26

    申请号：PCT/GB2013/050742

    申请日：2013-03-21

    Applicant: NEXEON LIMITED

    Inventor： LIU, Fengming ,  JIANG, Yuxiong ,  FRIEND, Christopher Michael ,  SPEED, Jonathon

    IPC: C23C18/00

    CPC classification number: H01M4/386 ,  C01B33/02 ,  C09K13/08 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1635 ,  C23C18/1689 ,  H01L21/30604 ,  H01L21/3081 ,  H01M4/0402 ,  H01M4/0492 ,  H01M4/134 ,  H01M4/1395 ,  H01M10/0525 ,  Y10T428/24479

    Abstract: A method of etching silicon of a material comprising silicon, the method comprising the steps of partially covering a silicon surface of the material comprising silicon with an elemental metal and then carrying out a metal-assisted chemical etching of the silicon by exposing the partially covered silicon surface to an etching composition, wherein at least some of the elemental metal for the metal-assisted chemical etching is formed by either: (a) exposing the silicon surface to a composition comprising metal ions, wherein the elemental metal forms by reduction of the metal ions and wherein the composition comprising metal ions is substantially free of HF, or (b) depositing the elemental metal directly onto the silicon surface.

    Abstract translation: 一种蚀刻包含硅的材料的硅的方法，该方法包括以下步骤：用元素金属部分地覆盖包含硅的材料的硅表面，然后通过暴露部分覆盖的硅进行金属辅助化学蚀刻硅 其中用于金属辅助化学蚀刻的至少一些元素金属通过以下方式形成：（a）将硅表面暴露于包含金属离子的组合物，其中通过还原金属形成元素金属 离子，并且其中包含金属离子的组合物基本上不含HF，或（b）将元素金属直接沉积到硅表面上。

    A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES
    2.
    发明申请
    A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 审中-公开
    制备由硅或基于硅的材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法

    公开(公告)号：WO2011124893A2

    公开(公告)日：2011-10-13

    申请号：PCT/GB2011/000546

    申请日：2011-04-08

    Applicant: NEXEON LIMITED ,  GREEN, Mino ,  LIU, Feng-Ming ,  JIANG, Yuxiong ,  STEVENS, Valerie, Elizabeth, Dawn ,  MILLS-LAMPTEY, Benjamin, Odarkwei

    Inventor： GREEN, Mino ,  LIU, Feng-Ming ,  JIANG, Yuxiong ,  STEVENS, Valerie, Elizabeth, Dawn ,  MILLS-LAMPTEY, Benjamin, Odarkwei

    CPC classification number: C23F1/16 ,  C09K13/08 ,  H01L21/30604 ,  H01M4/0492 ,  H01M4/38

    Abstract: The present invention provides a method for treating silicon to form pillars, especially for use as the active anode material in Li-ion batteries. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The solution comprises: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and foirning a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O 2 , 0 3 , H 2 O 2 , the acid, ammonium or alkali metal salt of NO 3 - , S 2 O 8 2- , NO 2 - , B 4 O 7 2- and C1O 4 - or a mixture thereof.. The treated silicon is suitably removed from the solution.

    Abstract translation: 本发明提供一种处理硅以形成柱状物的方法，特别是用作锂离子电池中的活性阳极材料。 该方法在商业规模上操作简单，因为它使用仅含少量成分的溶液，其浓度需要被控制，并且可以比以前的方法操作更便宜。 该溶液包括：0.01至5M HF 0.002至0.2M的能够在硅表面上包含元素金属区域的多孔层上成核并形成的金属离子; 0.001〜0.7M的选自O 2，O 3，H 2 O 2，NO 3 - ，S 2-8 2-，NO 2 - ，B 4 O 7 2-和C 1-4 - 的酸，铵或碱金属盐的氧化剂或其混合物。 从溶液中适当地除去硅。

    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
    3.
    发明申请
    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF 审中-公开
    蚀刻硅结构，形成蚀刻硅结构的方法及其用途

    公开(公告)号：WO2013093504A2

    公开(公告)日：2013-06-27

    申请号：PCT/GB2012/053241

    申请日：2012-12-21

    Applicant: NEXEON LIMITED

    Inventor： LIU, Fengming ,  JIANG, Yuxiong ,  GREEN, Mino

    CPC classification number: H01M4/386 ,  B81C1/00539 ,  C23C18/1601 ,  C23C18/1639 ,  C23C18/1651 ,  C23C18/31 ,  C23C18/38 ,  C23C18/42 ,  C23F1/34 ,  C23F1/40 ,  H01M4/0404 ,  H01M4/0492 ,  H01M4/366 ,  H01M10/052

    Abstract: A method of etching silicon, the method comprising the steps of: electrolessly depositing a first metal onto a silicon surface to be etched, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; depositing a second metal that is different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein a film of the deposited second metal covers the silicon surface to be etched; removing the first metal and the second metal from regions of the film of the deposited second metal that overlie the first metal to leave the second metal partially covering the silicon surface to be etched; and etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluoride ions.

    Abstract translation: 一种蚀刻硅的方法，所述方法包括以下步骤：将第一金属无电沉积到待蚀刻的硅表面上，其中所述无电沉积的第一金属部分地覆盖待蚀刻的硅的表面 ; 在硅表面上沉积不同于第一金属的第二金属和无电沉积的第一金属，其中沉积的第二金属的膜覆盖待蚀刻的硅表面; 从沉积的第二金属膜的覆盖第一金属的区域去除第一金属和第二金属，以留下第二金属部分地覆盖待蚀刻的硅表面; 以及通过将硅表面暴露于包含氧化剂和氟化物离子源的含水蚀刻组合物来蚀刻硅。

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