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公开(公告)号：WO2019136100A1
公开(公告)日：2019-07-11
申请号：PCT/US2019/012098
申请日：2019-01-02
发明人： SCHMITT, Jason , LU, Peng , JONES, Jeremy
摘要： The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.
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公开(公告)号：WO2018191708A1
公开(公告)日：2018-10-18
申请号：PCT/US2018/027641
申请日：2018-04-13
发明人： SCHMITT, Jason
CPC分类号： H05K1/053 , H01L23/142 , H01L23/3731 , H01L23/3735 , H01L2224/48227 , H01L2924/13055 , H01L2924/15153
摘要： The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at% to 49.9 at%, nitrogen is from 0.1 at% to 49.9 at% and a sum of oxygen and nitrogen is about 50 at%. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AION), aluminum oxyhydronitride (AIHON), aluminum oxycarbonitride (AICON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AISi, C-AI, W-Cu, or Ti.
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公开(公告)号：WO2015038398A1
公开(公告)日：2015-03-19
申请号：PCT/US2014/054071
申请日：2014-09-04
发明人： SCHMITT, Jason , JONES, Jeremy , LU, Peng
IPC分类号： C03B25/12 , H01L33/32 , H01L31/0304
CPC分类号： C30B23/005 , C30B25/00 , C30B29/403
摘要： The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.
摘要翻译： 本公开一般涉及用于生长III-V族氮化物晶体的系统和方法。 特别地，这些系统和方法包括通过由构成物质组成的多孔体扩散晶体的构成物质，其中物质自由地成核以生长大的氮化物晶体。
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公开(公告)号：WO2015054430A1
公开(公告)日：2015-04-16
申请号：PCT/US2014/059773
申请日：2014-10-08
发明人： LU, Peng , SCHMITT, Jason
IPC分类号： H01L33/32 , C30B25/00 , H01L31/0304
CPC分类号： C30B23/002 , C30B23/025 , C30B25/16 , C30B25/186 , C30B29/403
摘要： The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. The systems and methods further include using thermal gradients and/or chemical driving agents to enhance or limit crystal growth in one or more planes.
摘要翻译： 本公开一般涉及用于生长和优先体积增强III-V族氮化物晶体的系统和方法。 特别地，这些系统和方法包括通过由构成物质组成的多孔体扩散晶体的构成物质，其中物质自由地成核以生长大的氮化物晶体。 该系统和方法还包括使用热梯度和/或化学驱动剂来增强或限制一个或多个平面中的晶体生长。
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公开(公告)号：WO2013003605A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/044671
申请日：2012-06-28
发明人： SCHMITT, Jason
IPC分类号： C30B23/00
CPC分类号： C30B25/00 , C30B29/403
摘要： The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.
摘要翻译： 本公开提供了用于生产大块单晶的装置和方法。 特别地，本公开提供了用于通过金属蒸气和反应气体的元素反应通过金属蒸气和反应气体的元素反应来生产金属化合物的体单晶的装置和方法。
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公开(公告)号：WO2013003618A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/044690
申请日：2012-06-28
发明人： SCHMITT, Jason
IPC分类号： H01L29/20
CPC分类号： H01L21/0254 , H01L21/02579 , H01L21/02664 , H01L21/322
摘要： The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.
摘要翻译： 本公开提供了退火III-V族金属氮化物晶体，晶片，外延层和外延膜以减少氮空位的方法。 特别地，本公开提供了在高温和高压环境中对III-V族金属氮化物进行缓慢退火的方法。
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公开(公告)号：WO2013003609A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/044677
申请日：2012-06-28
发明人： SCHMITT, Jason
IPC分类号： C30B25/00
CPC分类号： C30B25/00 , C30B29/403
摘要： The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.
摘要翻译： 本公开提供了用于生产大块单晶的装置和方法。 具体而言，本公开提供了用于通过金属蒸气和反应物气体的元素反应通过金属蒸气和反应物气体的元素反应来生产金属化合物的大单晶的装置和方法。
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