公开(公告)号：WO2022191953A1

公开(公告)日：2022-09-15

申请号：PCT/US2022/016263

申请日：2022-02-14

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： DUAN, Dah-Weih ,  KUNKEE, Elizabeth, T. ,  RODEN, Martin, E. ,  WOO, Laura, M.

IPC: H01P3/08 ,  H01P5/02 ,  H01P1/04

Abstract: A microelectronics H-frame device comprising an RF crossover includes: a stack of two or more substrates, wherein a bottom surface of a top substrate comprises top substrate bottom metallization, and wherein a top surface of a bottom substrate comprises bottom substrate top metallization, wherein the top substrate bottom metallization and the bottom substrate top metallization form a ground plane that provides isolation to allow a first signal line to traverse one or more of the top substrate and the bottom substrate without being disturbed by a second signal line traversing one or more of the top substrate and the bottom substrate at a non-zero angle relative to the first signal line, at least one of the first signal line and the second signal line passing to a second level with the protection of the ground plane, thereby providing isolation from the other signal line.

公开(公告)号：WO2022015398A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/031224

申请日：2021-05-07

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： DUAN, Dah-Weih ,  KUNKEE, Elizabeth, T. ,  LAROUCHE, Stephane

IPC: H01P1/203

Abstract: An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.

公开(公告)号：WO2022191937A1

公开(公告)日：2022-09-15

申请号：PCT/US2022/015204

申请日：2022-02-04

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： DUAN, Dah-Weih ,  KUNKEE, Elizabeth, T. ,  RODEN, Martin, E. ,  WOO, Laura, M.

IPC: H01L23/66 ,  H01L23/04 ,  H01L23/06 ,  H01L23/10 ,  H01L23/14 ,  H01L23/544 ,  H01L23/552 ,  H01P1/04 ,  H01L23/00

Abstract: A microelectronics H -frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro- machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.

公开(公告)号：WO2021221744A1

公开(公告)日：2021-11-04

申请号：PCT/US2021/015211

申请日：2021-01-27

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： KUNKEE, Elizabeth T. ,  DUAN, Dah-Weih ,  FERIZOVIC, Dino ,  ZHANG, Chunbo ,  TSAI, Greta, S. ,  SHIAU, Ming-Jong ,  SCHERRER, Daniel, R. ,  RODEN, Martin, E.

IPC: H01P1/203 ,  H01P1/213 ,  H01P11/00 ,  H01L23/04 ,  H01L23/10

Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.