公开(公告)号：WO2021221744A1

公开(公告)日：2021-11-04

申请号：PCT/US2021/015211

申请日：2021-01-27

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： KUNKEE, Elizabeth T. ,  DUAN, Dah-Weih ,  FERIZOVIC, Dino ,  ZHANG, Chunbo ,  TSAI, Greta, S. ,  SHIAU, Ming-Jong ,  SCHERRER, Daniel, R. ,  RODEN, Martin, E.

IPC: H01P1/203 ,  H01P1/213 ,  H01P11/00 ,  H01L23/04 ,  H01L23/10

Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

公开(公告)号：WO2014137484A1

公开(公告)日：2014-09-12

申请号：PCT/US2014/010618

申请日：2014-01-08

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： ZHANG, Chunbo ,  NGO, Peter ,  AKERLING, Gershon ,  LEONG, Kevin M. ,  CHANG-CHIEN, Patty ,  HENNIG, Kelly, J. ,  DEAL, William, R.

IPC: H01L23/66 ,  H01L23/055 ,  H01L23/14 ,  H01P3/12 ,  H01Q1/22 ,  H01Q23/00

CPC classification number: H01L27/14685 ,  H01L21/76254 ,  H01L23/055 ,  H01L23/147 ,  H01L23/66 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L27/14687 ,  H01L31/186 ,  H01L31/1876 ,  H01L2223/6627 ,  H01L2223/6633 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/0401 ,  H01L2224/13109 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/81022 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81204 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/12032 ,  H01L2924/13064 ,  H01L2924/14215 ,  H01L2924/1423 ,  H01L2924/15313 ,  H01L2924/157 ,  H01L2924/37001 ,  H01P11/002 ,  H01Q13/02 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/01079

Abstract: A method of fabricating sub-millimeter wavelength devices comprising one or more MMIC chips. First and second wafers are batch processed, the first wafer being provided with one or more DC through vias and the second wafer being provided with one or more cavities. The first and second wafers are bonded together. An MMIC chip is placed in the cavity of the second wafer. MMICs may be screened prior to integration, and only known-good die integrated. In one implementation an apparatus is provided which is a pixel of a sub-millimeter wavelength focal plane array and which comprises a layered structure with an antenna aligned with at least one cavity of a waveguide layer. In a further implementation sub- millimeter focal plane array comprising the layered device is provided. MMICs of different technologies may be integrated into the same micromachined package.

Abstract translation: 制造包括一个或多个MMIC芯片的亚毫米波长器件的方法。 第一和第二晶片被批量处理，第一晶片设置有一个或多个直流通孔，第二晶片设置有一个或多个空腔。 第一和第二晶片结合在一起。 MMIC芯片放置在第二晶片的空腔中。 MMIC可以在集成之前进行筛选，并且只有已知的模具才能集成。 在一个实施方案中，提供了一种装置，其是亚毫米波长焦平面阵列的像素，并且包括具有与波导层的至少一个空腔对准的天线的分层结构的装置。 在另外的实施例中，提供了包括分层器件的亚毫米焦平面阵列。 不同技术的MMIC可以集成到相同的微加工包装中。