公开(公告)号：WO2013128181A1

公开(公告)日：2013-09-06

申请号：PCT/GB2013/050481

申请日：2013-02-27

Applicant: OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED

Inventor： MCNIE, Mark Edward ,  COOKE, Michael Joseph ,  LEA, Leslie Michael

IPC: H01L21/3213 ,  H01L21/3065

CPC classification number: H01J37/32926 ,  C23C16/50 ,  C23C16/52 ,  G05B19/418 ,  G05B2219/34198 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32917 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/306 ,  H01L21/30655 ,  H01L22/12 ,  H01L22/26

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (T gr ) of the processing chamber for the step.

Abstract translation: 公开了用于在具有处理室，控制器和用于调节室内的工艺参数的一个或多个装置的表面处理工具中从衬底上沉积材料和/或蚀刻材料的方法。 该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实现的一组定义的过程参数，其中至少一个控制步骤包括 所述控制器指示所述一个或多个设备在所述步骤的持续时间内实现一组定义的恒定过程参数，包括至少通过所述室的腔室压力和气体流速，所述持续时间小于相应的气体停留时间（Tgr ）的步骤处理室。