Abstract:
This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.
Abstract:
Disclosed herein is a dual lens system capable of maintaining a substantially constant color within a well-defined angular range of light incident on a reflective pixel. Each reflective pixel (or subpixel) of a display may include a primary lens and a field lens. The field lens may be positioned at a distance equal to a focal length of the primary lens. Each plane wave of incident light arriving at the primary lens aperture may be focused on a unique location of the focal plane, but may emerge from the field lens within the same range of angles. If a reflective pixel is positioned below the field lens, the reflected color should be substantially the same within a range of viewing angles. The range of angles may be defined by the numerical aperture of the lens system and by black mask material disposed between the reflective pixels or subpixels. Thus, a reflective display includes an array of reflective pixels; an array of primary lenses, each of the primary lenses corresponding to a distinct one of the reflective pixels; and an array of field lenses, each of the field lenses corresponding to a distinct one of the reflective pixels and one of the primary lenses, each of the field lenses being positioned at a distance from a corresponding primary lens, the distance being a focal length of the corresponding primary lens, each of the field lenses being disposed proximate a corresponding reflective pixel.
Abstract:
A display assembly includes an array of display elements disposed between a first substrate and a second substrate, the array of display elements including one or more thin film transistors (TFTs). A black mask arrangement is disposed between the first substrate and the second substrate, the black mask arrangement being configured to prevent light entering the display assembly from reaching the TFTs.
Abstract:
The disclosed technology relates to methods of patterning elongated structures. In one aspect, a method of forming pillars includes providing a substrate and providing a plurality of beads on a surface of the substrate. Regions of the surface without a directly overlying bead are exposed. The method additionally includes selectively etching the exposed regions of the substrate between the beads such that a plurality of pillars is formed under areas masked by the beads. Selectively etching completely removes at least some of the beads. The pillars that are not covered by beads are etched, thereby leaving some pillars taller than others, with the pillar height pending on the amount of time a pillar was left exposed to etchant by a removed bead.
Abstract:
This disclosure provides systems, methods and apparatus for an illumination system. In one aspect, the illumination system is a light guide (101) that includes spaced-apart regions of medium (205a, 205b, 205c and 205d) containing diffractive features. For example, the medium may include holographic medium having holograms that are configured to redirect light (140), propagating through the light guide (101), out of the light guide (101). The spaces (209a, 209b, 209c and 209d) between the spaced-apart regions of media (205a, 205b, 205c and 205d) may be filled with a material having a lower refractive index than the light guide, thereby functioning as a reflective cladding in those spaces.
Abstract:
This disclosure provides systems, methods and apparatus for increasing the efficiency of frontlight systems using thin waveguides (410). In one aspect, a narrowing reflective conduit (460) can be used to condense light from a light source (430) which is thicker than the waveguide (410), and inject it into the waveguide (410). A phosphor strip (470) at the exit aperture of the narrowing reflective conduit can inject light with a diffuse directional profile independent of the directional profile of light within the narrowing reflective conduit (460).
Abstract:
An optical touch sensor may include traces of photoconductive material formed on a substantially transparent substrate. Each photoconductive trace may be capable of responding to an incident light intensity increase on a portion of the photoconductive trace by increasing the number of charged carriers, thereby raising the electrical conductivity of that portion of the photoconductive trace. An incident light intensity decrease on a portion of the photoconductive trace will lower the electrical conductivity of that portion of the photoconductive trace. The corresponding changes in voltage may be measured by circuits that include conductive traces formed substantially perpendicular to, and configured for electrical connection with, the traces of photoconductive material. A diode (such as a Schottky diode) may be formed at the electrical connections between the conductive traces and the photoconductive traces.
Abstract:
This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.
Abstract:
This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer.
Abstract:
This disclosure provides display devices including at least one display element having a tinted native white color. The disclosure provides method of achieving the neutral white color by combining the tinted native white color produced by the at least one display element with a primary color that is complementary to the tint of the native white color using spatial and/or temporal dithering.