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    METHOD OF POST ETCH POLYMER RESIDUE REMOVAL
    3.
    发明申请
    METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
    去除聚合物残留物去除方法

    公开(公告)号：WO2009008958A3

    公开(公告)日：2009-04-16

    申请号：PCT/US2008007759

    申请日：2008-06-20

    Applicant: LAM RES CORP ,  YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

    Inventor： YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

    IPC: H01L21/3065

    CPC classification number: H01L21/02063 ,  H01L21/6708

    Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

    Abstract translation: 用于从衬底表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底表面去除蚀刻后聚合物残余物的干闪光化学物质。 干闪化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。 使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。 然后将湿清洗化学品施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

    MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA
    5.
    发明申请
    MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 审中-公开
    用于单相和双相介质去除颗粒的材料

    公开(公告)号：WO2009078975A3

    公开(公告)日：2009-08-27

    申请号：PCT/US2008013714

    申请日：2008-12-12

    Applicant: LAM RES CORP ,  MUI DAVID S L ,  SRINIVASAN SATISH ,  PENG GRANT ,  ZHU JI ,  KON SHIH-CHUNG ,  PODLESNIK DRAGAN ,  MENDIRATTA ARJUN

    Inventor： MUI DAVID S L ,  SRINIVASAN SATISH ,  PENG GRANT ,  ZHU JI ,  KON SHIH-CHUNG ,  PODLESNIK DRAGAN ,  MENDIRATTA ARJUN

    IPC: H01L21/302 ,  H01L21/304

    CPC classification number: C11D7/5009 ,  C11D3/3723 ,  C11D3/3765 ,  C11D3/3773 ,  C11D7/261 ,  C11D7/3263 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

    Abstract: The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.

    Abstract translation: 本发明的实施例提供了用于清洁具有精细特征的图案化基板的改进材料。 该清洁材料在清洁具有精细特征的图案化基板方面具有优势，而基本上不损坏该特征。 清洁材料是流体，无论是液相还是液相/气相，并在设备特征周围变形; 因此，清洁材料不会实质上损害设备特征或一起减少损坏。 含有大分子量聚合物的聚合物的清洁材料将污染物捕获在基底上。 另外，清洁材料包裹污染物并且不会将污染物返回到基材表面。 一种或多种具有大分子量的聚合物化合物的聚合物形成长聚合物链，其也可以交联以形成网络（或聚合物网络）。 与传统清洁材料相比，长聚合物链和/或聚合物网络显示出捕获和截留污染物的优越能力。

    METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES
    6.
    发明申请
    METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
    降低高比例纳米结构中图案褶皱的方法

    公开(公告)号：WO2011094132A2

    公开(公告)日：2011-08-04

    申请号：PCT/US2011022075

    申请日：2011-01-21

    Applicant: LAM RES CORP ,  YASSERI AMIR A ,  ZHU JI ,  YUN SEOKMIN ,  MUI DAVID S L ,  MIKHAYLICHENKO KATRINA

    Inventor： YASSERI AMIR A ,  ZHU JI ,  YUN SEOKMIN ,  MUI DAVID S L ,  MIKHAYLICHENKO KATRINA

    IPC: H01L21/302

    CPC classification number: H01L21/02057

    Abstract: A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.

    Abstract translation: 提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在制造半导体器件的一些严格处理过程中保护精细的纳米结构。 处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。 处理可以包括施加化学改变纳米结构表面的底漆，以防止它们在随后的湿清洁过程中被损坏。然后可以进一步处理晶片，例如湿法清洁工艺，随后进行干燥处理。 纳米结构的增加的疏水性有助于减少或防止纳米​​结构的崩溃。

    METHOD OF DIELECTRIC FILM TREATMENT
    7.
    发明申请
    METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
    电介质膜处理方法

    公开(公告)号：WO2009151656A3

    公开(公告)日：2010-03-04

    申请号：PCT/US2009035030

    申请日：2009-02-24

    Applicant: LAM RES CORP ,  YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

    Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

    IPC: H01L21/302 ,  H01L21/31

    CPC classification number: H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

    Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

    Abstract translation: 用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。 工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。 基于工艺参数识别多个应用化学物质。 多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。 包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程， 通过其形成特征的低k电介质材料。

    POST ETCH WAFER SURFACE CLEANING WITH LIQUID MENISCUS
    8.
    发明申请
    POST ETCH WAFER SURFACE CLEANING WITH LIQUID MENISCUS 审中-公开
    用液体半月板清洁后进行晶片表面清洗

    公开(公告)号：WO2008002669A3

    公开(公告)日：2008-05-02

    申请号：PCT/US2007015249

    申请日：2007-06-28

    Applicant: LAM RES CORP ,  ZHU JI ,  YUN SEOKMIN ,  WILCOXSON MARK ,  DE LARIOS JOHN M

    Inventor： ZHU JI ,  YUN SEOKMIN ,  WILCOXSON MARK ,  DE LARIOS JOHN M

    IPC: H01L21/00 ,  B08B3/00

    CPC classification number: H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

    Abstract: A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

    Abstract translation: 公开了一种用于清洁半导体晶片的表面的方法。 将第一种清洁溶液施加到晶片表面以去除晶片表面上的污染物。 第一个清洁溶液会被晶圆表面的一些污染物清除。 接下来，将氧化剂溶液施加到晶片表面。 氧化剂溶液在剩余的污染物上形成氧化层。 去除氧化剂溶液，然后将第二清洁溶液施加到晶片表面。 第二清洁溶液从晶片表面移除。 清洁溶液被配置为基本上除去氧化层以及剩余的污染物。

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