Abstract:
Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells 5 provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
Abstract:
Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells 5 provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
Abstract:
Methods and apparatus for reducing read access times associated with obtaining stored data from a non-volatile memory system are disclosed. According to one aspect of the present invention, a method for providing data to a bus within a memory system that includes a storage area involves providing a first signal (REM) within the memory system and enabling an output buffer in response to the first signal. The first signal indicates that the data is to be provided to the bus from the storage area, and is of a first level which has a first duration. The output buffer provides the data from the storage area to the bus, and remains substantially enabled while the first signal is of the first level. In one embodiment, the method also includes providing a second signal (OE) as an input to the output buffer to enable the output buffer.
Abstract:
A portion of data stored in a non-volatile memory may be found to be corrupted when it is read. Where parity data is generated from portions of data and the parity data is stored with the portions of data, the corrupted data may be reconstructed from the parity data and uncorrupted portions of data.
Abstract:
Methods and apparatus for transforming data into a format which may be efficiently stored in a non-volatile memory are disclosed. According to one aspect of the present invention, a method for storing information of a first data format in a memory system includes generating statistics associated with the first data format, and transforming the information from the first data format to a second data format using the statistics. Once the information is transformed into the second data format, the information is stored into a memory. Storing the information in the second data format in the memory includes storing an identifier that identifies a transformation used to transform the information to the second data format. In one embodiment, costs associated with storing the information in the second data format are less than or equal to costs associated with storing the information in the first data format.
Abstract:
The quality of data stored in a memory system in assessed by different methods, and the memory system is operated according to the assessed quality. The data quality (a) can be assessed during I-cad operations. Subsequent use of an Error Correction Code (a) can utilize the quality indications to detect and reconstruct the data with improved effectiveness. Alternatively, a statistics of data quality can be constructed and digital data values can be associated in a modified manner to prevent data corruption. In both cases the corrective actions can be implemented specifically on the poor quality data, according to suitably chosen schedules, and with improved effectiveness because of the knowledge provided by the quality indications. These methods can be especially useful in high-density memory systems constructed of multi-level storage memory cells.