公开(公告)号：WO2016087311A3

公开(公告)日：2016-07-28

申请号：PCT/EP2015077794

申请日：2015-11-26

Applicant: SCHOTT AG

Inventor： KUNZE MIRIAM ,  PEUCHERT ULRICH ,  SCHULTZ NIKOLAUS ,  DAMM THORSTEN ,  OTTERMANN CLEMENS

IPC: H01M2/02 ,  C01G51/00 ,  C03C3/076 ,  C03C3/083 ,  C03C3/087 ,  C03C3/091 ,  C23C14/10 ,  H01M2/08 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M2/0207 ,  C03C3/078 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/097 ,  C23C14/0676 ,  C23C14/3414 ,  H01M2/0267 ,  H01M2/028 ,  H01M2/0292 ,  H01M2/08 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2002/0297

Abstract: The invention relates to an electrical storage system having a thickness of less than 2 mm and containing at least one sheet-type discrete element, wherein the sheet-type discrete element is characterized by a high resistance to corrosion by alkali metals or ions of alkali metals, in particular lithium and the sheet-type discrete element has a low content of TiO2, the TiO2 content being preferably less than 2.0 wt.%., preferably less than 0.5 wt.%, and said element being preferably free of TiO2.

Abstract translation: 本发明涉及一种具有厚度为小于2mm的蓄电系统，其包括至少一个盘形分离元件，其中，与所述磁盘的高电阻盘形分离元件形离散元件相对于碱金属或碱土金属，特别是锂的离子的攻击，其中，所述盘形的离散元件 具有二氧化钛，其特征在于，TiO 2的含量优选为小于2.0重量％，优选小于0.5重量％，并且优选为TiO 2的游离的低含量。

公开(公告)号：WO2008049640A3

公开(公告)日：2008-10-16

申请号：PCT/EP2007009371

申请日：2007-10-29

Applicant: SCHOTT AG ,  OTTERMANN CLEMENS ,  ORTNER ANDREAS ,  GERSTNER KLAUS

Inventor： OTTERMANN CLEMENS ,  ORTNER ANDREAS ,  GERSTNER KLAUS

IPC: G01B11/30 ,  G01N21/958

CPC classification number: G01B11/306 ,  G01N21/896

Abstract: The invention is based on the object of improving the methods, which are hitherto known, for assessing the quality of glass surfaces and of designing the latter such that they can be applied for inline measurements. To this end, a method and an apparatus for determining the waviness of flat-glass substrates are provided, in which the deflection of light beams, which are transmitted by the substrate, at local deformations of the surface of the flat-glass substrate is detected in an optical and contactless manner and, using the detected deflection or at least a measurement variable resulting therefrom, the position and height of the local deformations are quantitatively determined, wherein the deflection values or variables derived therefrom are integrated over the measurement location in order to calculate the position and height of the local deformations.

Abstract translation: 本发明的目的是改进用于评估玻璃表面质量的先前已知的方法并且适用于在线测量。 为了这个目的，用于确定的平坦的玻璃基板的波状起伏的方法和设备被提供，其中，光学和非接触检测出光的通过扁平玻璃基板的表面的局部变形的基板波束上发射并且基于从这样的事实检测到的偏转或至少一个偏转 结果量，局部变形的位置和高度定量地确定，其中为了计算局部变形的位置和高度，偏转值或由其导出的量在测量位置上被积分。

公开(公告)号：WO2007014732A3

公开(公告)日：2007-06-14

申请号：PCT/EP2006007551

申请日：2006-07-31

Applicant: SCHOTT AG ,  PLAPPER VOLKER ,  OTTERMANN CLEMENS ,  KOEHR THOMAS ,  SPEIT BURKHARDT ,  CLAUSS MICHAEL

Inventor： PLAPPER VOLKER ,  OTTERMANN CLEMENS ,  KOEHR THOMAS ,  SPEIT BURKHARDT ,  CLAUSS MICHAEL

IPC: B24B7/24 ,  B24B13/015 ,  B24B37/04

CPC classification number: C03C19/00 ,  B24B7/224 ,  B24B7/242 ,  B24B13/015 ,  B24B37/04

Abstract: The invention relates to improved glass substrates, particularly for manufacturing TFT displays. To this end, the invention provides a method for subsequently treating sheet glass substrates, particularly sheet glass substrates for manufacturing flat screens. The substrate has an area of at least 3.2 m 2 , preferably an area of at least 3.6 m 2 , and the substrate, on an area of at least 3.2 m 2 , preferably an area of at least 3.6 m 2 , is subsequently processed by removing material on at least one side.

Abstract translation: 本发明的目的是提供改进的玻璃基底，特别是用于生产TFT显示器。 为此，本发明提供了的平坦的玻璃基板的处理的方法，特别是扁平的玻璃基板用于平板生产之前，具有至少3.2米 ^{2 ，优选的区域中的表面区域中的基材的至少 其中所述基材具有至少3.2m 2 /面积的面积，优选至少3.6m 2 / cm 2的面积， SUP>通过从至少一侧去除材料而后处理。}

公开(公告)号：WO2016087313A3

公开(公告)日：2016-08-18

申请号：PCT/EP2015077799

申请日：2015-11-26

Applicant: SCHOTT AG

Inventor： PEUCHERT ULRICH ,  LIEBALD RAINER ,  KUNZE MIRIAM ,  DAMM THORSTEN ,  OTTERMANN CLEMENS ,  SCHULTZ NIKOLAUS

IPC: H01M2/02 ,  C03C3/093 ,  H01M10/04 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M10/0436 ,  C03C3/064 ,  C03C3/066 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/097 ,  C03C4/20 ,  H01M2/0267 ,  H01M10/0525 ,  H01M10/0585

Abstract: The invention relates to an electrical storage system having a thickness of less than 2 mm, containing at least one disc-shaped discrete element, characterized by a high resistance of the disc-shaped discrete element against the attack of transition metals or ions of transition metals, in particular titanium, wherein the disc-shaped discrete element contains titanium. The invention also relates to a disc-shaped discrete element for use in an electrical storage system which has a high resistance against the attack of transition metals or ions of transition metals, in particular titanium.

Abstract translation: 本发明涉及一种具有厚度为小于2mm的蓄电系统，其包括至少一个盘形分离元件，其特征在于由所述磁盘的高电阻状离散元件相对于过渡金属或过渡金属，特别是钛，其中，所述盘形的离散元件钛可持续是离子的攻击 以及用于电存储系统中的盘形离散元件，所述电存储系统具有高过渡金属或过渡金属特别是钛的过渡金属或离子的抵抗性。

公开(公告)号：WO2015197594A3

公开(公告)日：2016-02-25

申请号：PCT/EP2015064064

申请日：2015-06-23

Applicant: SCHOTT AG

Inventor： PEUCHERT ULRICH ,  LIEBALD RAINER ,  KUNZE MIRIAM ,  DAMM THORSTEN ,  OTTERMANN CLEMENS ,  SCHULTZ NIKOLAUS

IPC: H01M4/131 ,  C01G51/00 ,  C03C3/076 ,  C03C3/087 ,  H01M4/525 ,  H01M4/66 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0562 ,  H01M10/0585

CPC classification number: H01M2/0292 ,  C03C3/064 ,  C03C3/066 ,  C03C3/078 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/089 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/097 ,  C03C3/11 ,  C03C17/225 ,  C03C17/245 ,  C03C17/3668 ,  C03C17/42 ,  C03C23/002 ,  C03C2217/213 ,  C03C2217/281 ,  C03C2218/153 ,  C03C2218/156 ,  H01M2/0207 ,  H01M2/0267 ,  H01M2/0287 ,  H01M2/08 ,  H01M4/131 ,  H01M4/525 ,  H01M4/66 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/0585 ,  H01M2002/0297 ,  H01M2220/30

Abstract: The invention relates to an electric storage element comprising at least one discrete disk-shaped element with increased transparency to high-energy electromagnetic radiation, and to a discrete disk-shaped element having an increased transparency to high-energy electromagnetic radiation, as well as to the manufacture thereof.

Abstract translation: 本发明涉及一种包括至少一个分立盘形构件具有增加的透明度，以高能量电磁辐射和离散盘形构件，其具有增加的透明度，以高能量电磁辐射，以及它们的生产的蓄电元件。

公开(公告)号：WO2007031317A2

公开(公告)日：2007-03-22

申请号：PCT/EP2006008968

申请日：2006-09-14

Applicant: SCHOTT AG ,  OTTERMANN CLEMENS ,  POMMEREHNE JOERN

Inventor： OTTERMANN CLEMENS ,  POMMEREHNE JOERN

IPC: C23C14/10 ,  C03C17/00

CPC classification number: C23C14/10 ,  Y10T428/249953 ,  Y10T428/249961 ,  Y10T428/249978 ,  Y10T428/249982

Abstract: The invention relates to a method for applying a porous glass layer. According to the invention, a porous glass layer is to be applied according to a PVD-method. The degree of porosity and average pore size can vary according to the process parameters, such as pressure and precipitation rate and by targeted addition of foreign bodies.

Abstract translation: 本发明涉及一种施加多孔玻璃层的方法。 建议通过PVD工艺应用多孔玻璃层。 孔隙度和平均孔径可以通过工艺参数如压力和沉积速率以及通过目标添加外来物质而改变。

公开(公告)号：WO2015197591A2

公开(公告)日：2015-12-30

申请号：PCT/EP2015064060

申请日：2015-06-23

Applicant: SCHOTT AG

Inventor： PEUCHERT ULRICH ,  LIEBALD RAINER ,  KUNZE MIRIAM ,  DAMM THORSTEN ,  OTTERMANN CLEMENS ,  SCHULTZ NIKOLAUS

IPC: H01M2/02

CPC classification number: H01M2/0287 ,  C03B17/06 ,  C03C3/064 ,  C03C3/066 ,  C03C3/083 ,  C03C3/085 ,  C03C3/089 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/097 ,  C03C3/11 ,  C03C17/3668 ,  C03C23/002 ,  H01M2/0207 ,  H01M2/0267 ,  H01M2/028 ,  H01M2/08 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2002/0297 ,  H01M2220/30

Abstract: The invention relates to an electric storage element comprising at least one discrete disc-shaped element with a particularly low transparency to high-energy electromagnetic radiation, preferably in the wavelength range between 200 and 400 nm, and to the manufacture thereof, as well as a discrete disc-shaped element having a particularly low transparency to high-energy electromagnetic radiation, preferably in the wavelength range between 200 and 400 nm, and the manufacture thereof.

Abstract translation: 本发明涉及一种蓄电元件，其包括至少一个分立盘形构件具有特别低透明度高能量电磁辐射，优选在波长范围200到400nm，和它的制备，以及其具有特别低的透明性，以高能量电磁辐射的分立盘形部件 优选的波长范围为200〜400nm的，特征和它的生产。

公开(公告)号：WO2006087213A2

公开(公告)日：2006-08-24

申请号：PCT/EP2006001465

申请日：2006-02-17

Applicant: SCHOTT AG ,  GERSTNER KLAUS ,  OTTERMANN CLEMENS ,  HUNZINGER BERNHARD

Inventor： GERSTNER KLAUS ,  OTTERMANN CLEMENS ,  HUNZINGER BERNHARD

IPC: G01N21/89

CPC classification number: G01N21/896 ,  G01N21/8903 ,  G01N21/94

Abstract: The invention relates to a device for detecting defects, more particularly in the surfaces of workpieces, wherein radiation is directed at a workpiece and is at least partially influenced by the workpiece, preferably by the defect.

Abstract translation: 本发明提供一种装置，用于检测缺陷，特别是在工件上之前的表面，其中辐射指向的工件和工件，优选是至少部分地由所述缺陷的影响。

公开(公告)号：WO2004076230A3

公开(公告)日：2004-12-02

申请号：PCT/EP2004001911

申请日：2004-02-26

Applicant: SCHOTT AG ,  OTTERMANN CLEMENS ,  SCHULTHEIS BERND ,  KOEBRICH HOLGER ,  HERTEL DIRK ,  EFFENBERGER RUTH ,  HAMMERL KLAUS MICHAEL

Inventor： OTTERMANN CLEMENS ,  SCHULTHEIS BERND ,  KOEBRICH HOLGER ,  HERTEL DIRK ,  EFFENBERGER RUTH ,  HAMMERL KLAUS MICHAEL

IPC: B60Q20060101 ,  H01L33/00 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/56 ,  H05B33/00 ,  H05B33/10 ,  H05B33/12 ,  H01L51/20

CPC classification number: H01L27/3239 ,  H01L51/52 ,  H01L51/5212 ,  H01L51/5234 ,  H01L51/56

Abstract: The invention relates to a method for producing structured OLED's, which easily and versatilely enables an alteration of the desired structure whereby enabling the economical production of a small number of pieces and large-area structured light-emitting devices. In order to carry out the inventive method, a substrate (142) is prepared, and a structured protective layer (112) is produced on a layer of the light-emitting layer assembly (132). The protective layer serves, in particular, as an etching mask for structuring said layer. To this end, the protective layer is applied to said structure and fixed thereto in a structured manner. The protective layer is preferably printed in a, for example, electrophotographically or piezoelectrically induced manner by means of a non-impact method.

Abstract translation: 本发明涉及一种用于生产结构化的OLED的方法，其允许容易和灵活地改变所期望的结构，使得小批量和大型结构光发射器件可被经济地制造。 提供用于发光层布置（132），其特征在于，特别是在保护层用作蚀刻掩模的图案化的层上执行本发明的方法和产生的结构化的保护层（112）的衬底（142）所述层。 该保护层被施加为此目的构造固定在所述层上的所述层。 通过一个非冲击方法的装置中的保护层是优选的，例如 电子照相或压电感应打印。

公开(公告)号：WO2016087311A4

公开(公告)日：2016-09-22

申请号：PCT/EP2015077794

申请日：2015-11-26

Applicant: SCHOTT AG

Inventor： KUNZE MIRIAM ,  PEUCHERT ULRICH ,  SCHULTZ NIKOLAUS ,  DAMM THORSTEN ,  OTTERMANN CLEMENS

IPC: H01M2/02 ,  C01G51/00 ,  C03C3/076 ,  C03C3/083 ,  C03C3/087 ,  C03C3/091 ,  C23C14/10 ,  H01M2/08 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M2/0207 ,  C03C3/078 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/097 ,  C23C14/0676 ,  C23C14/3414 ,  H01M2/0267 ,  H01M2/028 ,  H01M2/0292 ,  H01M2/08 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2002/0297

Abstract: The invention relates to an electrical storage system having a thickness of less than 2 mm and containing at least one sheet-type discrete element, wherein the sheet-type discrete element is characterized by a high resistance to corrosion by alkali metals or ions of alkali metals, in particular lithium and the sheet-type discrete element has a low content of TiO2, the TiO2 content being preferably less than 2.0 wt.%., preferably less than 0.5 wt.%, and said element being preferably free of TiO2.

Abstract translation: 本发明涉及一种具有厚度为小于2mm的蓄电系统，其包括至少一个盘形分离元件，其中，与所述磁盘的高电阻盘形分离元件形离散元件相对于碱金属或碱土金属，特别是锂的离子的攻击，其中，所述盘形的离散元件 具有低含量的TiO 2，其中TiO 2含量优选小于2.0重量％，优选小于0.5重量％，并且优选TiO 2不含TiO 2。