公开(公告)号：WO2017137869A1

公开(公告)日：2017-08-17

申请号：PCT/IB2017/050554

申请日：2017-02-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： YAMAZAKI, Shunpei ,  OKAZAKI, Kenichi ,  TSUBUKU, Masashi ,  BABA, Haruyuki ,  SHIGENOBU, Sachie ,  KOEZUKA, Emi

IPC: H01L29/786 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor, a variation in electrical characteristics is suppressed and reliability is improved. A semiconductor device includes a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, a second gate electrode over the second insulating film, and a third insulating film over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other. A difference between a minimum value and a maximum value of the field-effect mobility in the case where the field-effect mobility in a saturation region of the transistor is measured.

Abstract translation: 在包括氧化物半导体的晶体管中，电特性的变化得到抑制并且可靠性得到改善。 半导体器件包括晶体管。 晶体管包括：第一栅电极;在第一栅电极上的第一绝缘膜;在第一绝缘膜上的氧化物半导体膜;在氧化物半导体膜上的第二绝缘膜;在第二绝缘膜上的第二栅电极;以及 第三绝缘膜覆盖氧化物半导体膜和第二栅电极。 氧化物半导体膜包括与第二栅电极重叠的沟道区，与第三绝缘膜接触的源极区以及与第三绝缘膜接触的漏极区。 第一栅电极和第二栅电极彼此电连接。 在测量晶体管的饱和区域中的场效应迁移率的情况下场效应迁移率的最小值和最大值之间的差值。