公开(公告)号：WO2013074680A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/065090

申请日：2012-11-14

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： CISMARU, Cristian ,  ZAMPARDI, Peter, J., Jr.

IPC: H01L29/73 ,  H04B1/00 ,  G01R31/26

CPC classification number: H01L27/0658 ,  H01L21/8252 ,  H01L22/14 ,  H01L27/0605 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66242 ,  H01L29/737 ,  H01L29/7371 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/15184 ,  H01L2924/15192 ,  H04M1/026 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed are structures and methods related to a barrier layer for metallization of a selected semiconductor such as indium gallium phosphide (InGaP). In some embodiments, the barrier layer can include tantalum nitride (TaN). Such a barrier layer can provide desirable features such as barrier functionality, improved adhesion of a metal layer, reduced diffusion, reduced reactivity between the metal and InGaP, and stability during the fabrication process. In some embodiments, structures formed in such a manner can be configured as an emitter of a gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) or an on-die high-value capacitance element. In some embodiments, some of the foregoing structures can be configured as a capacitance element having a capacitance value representative of the thickness of the emitter layer. Accordingly, monitoring of such a capacitance value during various HBT processes allows monitoring of the integrity of the emitter layer.

Abstract translation: 公开了与用于诸如铟镓磷化物（InGaP）的选定半导体的金属化的阻挡层有关的结构和方法。 在一些实施例中，阻挡层可以包括氮化钽（TaN）。 这种阻挡层可以提供期望的特征，例如屏障功能，金属层的改善的粘附，减小的扩散，金属和InGaP之间的反应性降低，以及制造过程中的稳定性。 在一些实施例中，以这种方式形成的结构可被配置为砷化镓（GaAs）异质结双极晶体管（HBT）的发射极或片上高电容元件。 在一些实施例中，前述结构中的一些可被配置为具有代表发射极层的厚度的电容值的电容元件。 因此，在各种HBT过程中监测这种电容值允许监测发射极层的完整性。